K4A8G165WC-BCTD vs K4A8G165WB-BCPB Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G165WC-BCTD sa pamamagitan ng Samsung Electronics at K4A8G165WB-BCPB sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G165WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps x16 | Samsung
K4A8G165WC-BCTD ✓ NakahandaSamsung Electronics
K4A8G165WB-BCPB - 8Gb DDR4 SDRAM 2133Mbps x16 | Samsung
K4A8G165WB-BCPB ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A8G165WC-BCTD | K4A8G165WB-BCPB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasyon | 512M x16 | 512M x 16 |
| Rate ng Data | 2666 Mbps (DDR4-2666) | 2133 Mbps |
| Clock Frequency | 1.333 GHz | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Operating Voltage Range | 1.14 V to 1.26 V | — |
| Temperature na Operasyon | 0C to +95C | 0C to +85C |
| Packhaging | 96FBGA | 96FBGA (TFBGA) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Die Generation | C-die (1Y nm-class process) | 8Gb B-die |
| CRC Function | Yes (write CRC) | — |
| ZQ Calibration | Yes | — |
| On-Die Termination | Dynamic ODT | — |
| Data Mask | Yes (x16 DM) | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Tindminan RoHS | Compliant | Compliant (per Lisleapex listing) |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Number of Terminals | — | 96 |
| Package Shape | — | Rectangular, bottom terminal position |
| Interface | — | DDR4 (synchronous, double data rate) |
| Bank Groups | — | DDR4 bank-group architecture |
| Refresh | — | [DATA_NEEDED: refresh specification] |