K4AAG085WM-BCWE vs K4AAG085WM-BCRC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4AAG085WM-BCWE sa pamamagitan ng Samsung Electronics at K4AAG085WM-BCRC sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4AAG085WM-BCWE - 16Gb DDR4 3200Mbps 78FBGA | Samsung
K4AAG085WM-BCWE ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | K4AAG085WM-BCWE | K4AAG085WM-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | DRAM | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gb | [DATA_NEEDED: exact density in Gb] |
| Organisasyon | 2G x 8 | x8 |
| Rate ng Data | 3200 Mbps (DDR4-3200) | — |
| Volte ng Pagbibigay | 1.2 V | — |
| Temperature na Operasyon | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Packhaging | 78FBGA | 78-ball FBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Interface | DDR4 (JEDEC-standard) | SSTL12 |
| Bank Group Architecture | Yes (DDR4) | — |
| Speed Grade Suffix | -BCWE | — |
| Application Class | Memory IC / Storage Component | — |
| Power Reduction vs DDR3 | Approx. 25% lower (per Samsung DDR4 literature) | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Level ng MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: moisture sensitivity level] |
| Supply Voltage (VDD) | — | 1.2 V |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Max Data Rate | — | Up to 3200 Mbps/pin (family max per Samsung DDR4 page) |
| Architecture | — | Bank-group DDR4 |
| Termination | — | On-Die Termination (ODT) |
| Latensya ng CAS | — | [DATA_NEEDED: CL of -BCRC speed grade] |
| Clock | — | Differential clock CK/CK# |