K4RAH086VP-BCWM vs K4RAH086VE-BCWM Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4RAH086VP-BCWM sa pamamagitan ng Samsung Electronics at K4RAH086VE-BCWM sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4RAH086VE-BCWM - DDR5 16Gb 5600Mbps DRAM | Samsung Electronics
K4RAH086VE-BCWM ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4RAH086VP-BCWM | K4RAH086VE-BCWM |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | — | In Stock |
| Presyo ng Yunit (USD) | — | $7.60 |
| Uri ng Memory | DDR5 SDRAM | DDR5 SDRAM |
| Laki ng Memory | 16 Gb | — |
| Memory Organization | 2G x 8 | — |
| Rate ng Data | 5600 Mbps/pin | 5600 Mbps |
| Volte ng Pagbibigay | 1.1 V | — |
| Interface | Parallel | — |
| Technology | DRAM DDR5 | — |
| Memory Format | DRAM | — |
| Volatile / Non-Volatile | Volatile | — |
| Packhaging | [DATA_NEEDED: exact FBGA package code and body size] | 82-ball FBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Packaging | Tray | — |
| Application Segment | Industrial | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| Katayuan ng Lifecycle | Active | Mass Production |
| Tindminan RoHS | unknown | [DATA_NEEDED: RoHS status] |
| Level ng MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Density | — | 16 Gb |
| Organisasyon | — | 2G x 8 |
| Supply Voltage (VDD) | — | 1.1 V |
| Generation | — | DDR5 |
| Bank Groups | — | [DATA_NEEDED: bank group count] |
| Latensya ng CAS | — | [DATA_NEEDED: CL at 5600 Mbps] |
| VDDQ Voltage | — | [DATA_NEEDED: VDDQ value] |
| Refresh | — | [DATA_NEEDED: refresh rate] |
| Manufacturer | — | Samsung Electronics |