M29F800FB55M3F2 vs M29F400FT55N3F2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng M29F800FB55M3F2 sa pamamagitan ng Micron Technology at M29F400FT55N3F2 sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
M29F800FB55M3F2 - 8Mbit 5V 55ns NOR Flash SO44 | Micron
M29F800FB55M3F2 ✓ NakahandaMicron Technology
M29F400FT55N3F2 - 4Mbit 5V Parallel NOR Flash 55ns | Micron
M29F400FT55N3F2 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | M29F800FB55M3F2 | M29F400FT55N3F2 |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Kategorya | Memory ICs | EEPROM |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | NOR Flash, Parallel | NOR Flash (SLC) |
| Density | 8389 kbits (8 Mbit) | — |
| Organisasyon | 512K x 16-bit / 1M x 8-bit | 256K x 16 |
| Number of Words | 512 k | — |
| Bits per Word | 16 bits | — |
| Access Time | 55 ns | 55 ns |
| Supply Voltage (VCC) | 5 V | — |
| Boot Block Type | Bottom Boot Block | — |
| Interface | Parallel, Asynchronous | Parallel |
| Programming | Embedded byte/word program algorithms | — |
| OTP Area | 64 byte | — |
| Temperature na Operasyon | -40C to +125C | [DATA_NEEDED: min operating temperature] |
| Automotive Qualification | Auto Grade 3 (temperature grade 3, +125C) | — |
| Packhaging | 44-pin SO (SOIC-44) | 44-SO (SOP-44) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Packing | Tape & Reel (T/R) | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | — |
| Endurance | [DATA_NEEDED: program/erase endurance cycles] | — |
| Laki ng Memory | — | 4 Mbit |
| Volte ng Pagbibigay | — | 5 V |
| Block Architecture | — | Top boot block |
| Temperature Grade | — | Auto Grade 3, up to +125C (per Micron ordering code) |
| Compliance Suffix | — | F2 (RoHS-compliant, lead-free plating) |
| Programming Voltage | — | Single supply (no 12 V VPP required) |
| Technology | — | Floating-gate NOR cell, charge-pump program/erase |
| Max Standby Current | — | [DATA_NEEDED: standby current] |
| Program/Erase Endurance | — | [DATA_NEEDED: endurance cycles] |