M29F800FB55M3F2 vs M29F400FT55N3F2 比較
詳細並排比較 M29F800FB55M3F2 由 Micron Technology 與 M29F400FT55N3F2 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | M29F800FB55M3F2 | M29F400FT55N3F2 |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | EEPROM |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | NOR Flash, Parallel | NOR Flash (SLC) |
| Density | 8389 kbits (8 Mbit) | — |
| 組織 | 512K x 16-bit / 1M x 8-bit | 256K x 16 |
| Number of Words | 512 k | — |
| Bits per Word | 16 bits | — |
| Access Time | 55 ns | 55 ns |
| Supply Voltage (VCC) | 5 V | — |
| Boot Block Type | Bottom Boot Block | — |
| 介面 | Parallel, Asynchronous | Parallel |
| Programming | Embedded byte/word program algorithms | — |
| OTP Area | 64 byte | — |
| 工作溫度 | -40C to +125C | [DATA_NEEDED: min operating temperature] |
| Automotive Qualification | Auto Grade 3 (temperature grade 3, +125C) | — |
| 封裝 | 44-pin SO (SOIC-44) | 44-SO (SOP-44) |
| 安裝類型 | Surface Mount | Surface Mount |
| Packing | Tape & Reel (T/R) | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | — |
| Endurance | [DATA_NEEDED: program/erase endurance cycles] | — |
| 記憶體容量 | — | 4 Mbit |
| 供應電壓 | — | 5 V |
| Block Architecture | — | Top boot block |
| Temperature Grade | — | Auto Grade 3, up to +125C (per Micron ordering code) |
| Compliance Suffix | — | F2 (RoHS-compliant, lead-free plating) |
| Programming Voltage | — | Single supply (no 12 V VPP required) |
| Technology | — | Floating-gate NOR cell, charge-pump program/erase |
| Max Standby Current | — | [DATA_NEEDED: standby current] |
| Program/Erase Endurance | — | [DATA_NEEDED: endurance cycles] |