M321R4GA0EB0-CWM vs M321R4GA3EB0-CWM Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng M321R4GA0EB0-CWM sa pamamagitan ng Samsung Electronics at M321R4GA3EB0-CWM sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Samsung Electronics
M321R4GA0EB0-CWM M321R4GA0EB0-CWM - 32GB DDR5-5600 ECC RDIMM | Samsung

M321R4GA0EB0-CWM - 32GB DDR5-5600 ECC RDIMM | Samsung

M321R4GA0EB0-CWM ✓ Nakahanda
Samsung Electronics
M321R4GA3EB0-CWM M321R4GA3EB0-CWM - 32GB DDR5-5600 ECC RDIMM | Samsung

M321R4GA3EB0-CWM - 32GB DDR5-5600 ECC RDIMM | Samsung

M321R4GA3EB0-CWM ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro M321R4GA0EB0-CWM M321R4GA3EB0-CWM
Brand Samsung Electronics Samsung Electronics
Kategorya Memory ICs Memory ICs
Katayuan ng Lifecycle Aktibo Aktibo
Capacity 32 GB 32 GB
Uri ng Memory DDR5 SDRAM DDR5 SDRAM
Module Type 288-Pin ECC Registered DIMM (RDIMM) ECC Registered DIMM (RDIMM)
Rate ng Data 5600 Mbps (DDR5-5600) 5600 MT/s (PC5-44800)
Bandwidth Class PC5-44800 PC5-44800 (44800 MB/s)
Latensya ng CAS CL46 CL46
Operating Voltage 1.1 V 1.1 V
Rank x Organization 1R x 4 (Single Rank) —
Module Configuration 4G x 72 —
DRAM Component Organization 20 x FBGA 4G x 4 —
Bilang ng Pins 288 —
ECC Yes (Registered ECC) Yes (Registered with ECC)
Application Server / Workstation —
Product Status Sample (per Elite Memory Solutions listing) —
Tindminan RoHS [DATA_NEEDED: RoHS status] —
Temperature na Operasyon [DATA_NEEDED: operating temperature range] —
Form Factor — 288-pin DIMM
Rank Configuration — 2Rx8 (Dual Rank)
Organisasyon — 4Gx72
DRAM Composition — 20 x FBGA 2Gx8 DDR5 DRAM
Configuration — 1 x 32 GB
Application Segment — Server / Datacenter
Brand — Samsung Electronics
GTIN / EAN — 5715328154490

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