MRF6VP21KHR5 vs MRF6VP41KHR5 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MRF6VP21KHR5 sa pamamagitan ng NXP Semiconductors at MRF6VP41KHR5 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MRF6VP21KHR5 - 1000W VHV6 RF MOSFET, 235MHz, NI-1230 | NXP
MRF6VP21KHR5 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | MRF6VP21KHR5 | MRF6VP41KHR5 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | N-Channel Enhancement-Mode RF MOSFET (LDMOS) | N-Channel Lateral MOSFET |
| Technology | Laterally Diffused MOS (LDMOS) - VHV6 family | MOSFET (Metal-Oxide Semiconductor) |
| Drain-Source Voltage (Vdss) Max | 110 V | — |
| Continuous Drain Current | [DATA_NEEDED: continuous drain current Id] | — |
| Pulsed Output Power (Pout) at 235 MHz | 1000 W (typical, pulsed) | — |
| Operating Frequency Range | Up to 235 MHz | — |
| Power Gain (Gps) at 235 MHz | 24 dB (nominal, common-source) | — |
| Test Conditions | 50 V supply, pulsed RF service | — |
| Drain Efficiency (Typ) | [DATA_NEEDED: drain efficiency %] | — |
| Input/Output Matching | Unmatched (discrete matching network required) | — |
| Packhaging / Kaso | NI-1230-4H (5-pin ceramic flange) | NI-1230 |
| Uri ng Pagpapasok | Flange mount with screws to heatsink | Chassis Mount (flange) |
| Maximum Operating Temperature | 225 °C (package rating) | — |
| Peak Reflow Temperature | 260 °C (max 40 s) | 260 C |
| Operating Mode | Enhancement mode | — |
| Channel Polarity | N-Channel | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: RoHS compliance status] |
| Level ng MSL | [DATA_NEEDED: MSL rating] | — |
| Manufacturer | — | NXP Semiconductors |
| Part Status | — | Active |
| Frequency Range | — | 10 MHz to 500 MHz |
| Drain-Source Voltage (Vds) | — | 50 V |
| Test Frequency | — | 450 MHz |
| Output Power (Pout) | — | 1000 W |
| Power Gain (Gp) | — | 20 dB |
| Drain Current (Id) | — | 150 mA (operating idle current) |
| Operating Temperature (Max) | — | 225 C |
| Maximum Time at Peak Reflow | — | 40 s |
| Configuration | — | Single |