MRF8P20160HSR3 vs MRF8P20161HSR3 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MRF8P20160HSR3 sa pamamagitan ng NXP Semiconductors at MRF8P20161HSR3 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MRF8P20160HSR3 - 37W RF Power MOSFET 1880-2025 MHz | NXP
MRF8P20160HSR3 ✓ NakahandaNXP Semiconductors
MRF8P20161HSR3 - 37W 1880-2025MHz RF Power MOSFET | NXP
MRF8P20161HSR3 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MRF8P20160HSR3 | MRF8P20161HSR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | MRF8P20160HSR3 | — |
| Uri ng Transistor | N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Lateral MOSFET (RF Power) |
| Technology | HV8 lateral RF MOSFET | — |
| Frequency Band | 1880 MHz to 2025 MHz | — |
| Output Power (Average) | 37 W (Single-Carrier W-CDMA) | — |
| Drain Supply Voltage (VDD) | 28 Vdc | — |
| Quiescent Drain Current (IDQA) | 550 mA | — |
| Power Gain (Typ) | 16.5 dB at 1.92 GHz | — |
| Test Frequency | 1.92 GHz | 1.92 GHz |
| Packhaging / Kaso | NI-780S-4 (ceramic flanged) | — |
| Style ng Pagpapasok | Screw-down flange (through-hole) | — |
| Operating Class | Class AB or Class C | Class AB or Class C |
| Junction Temperature (Max) | 200 C (S-prefix sample-tested) | — |
| Application | W-CDMA / LTE / TD-SCDMA base-station PA | CDMA / cellular base station RF power amplifier |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance status] |
| Lead Finish | [DATA_NEEDED: lead finish] | — |
| Frequency Range | — | 1880 MHz to 2025 MHz |
| Drain Supply Voltage (Vdd) | — | 28 V |
| Average Output Power | — | 37 W (W-CDMA) |
| Small-Signal Gain | — | 16.4 dB at 1.92 GHz |
| Quiescent Drain Current (Idq) | — | 550 mA |
| Packhaging | — | NI-780S-4 (NI-780HS-4) ceramic air-cavity, surface mount |
| Uri ng Pagpapasok | — | Surface mount with screw-down flange |
| Polarity / Channel | — | N-Channel enhancement-mode lateral |
| Modulation Support | — | W-CDMA, LTE, multi-carrier GSM |
| Operating Mode | — | Enhancement mode |