MRF8P20160HSR3 vs MRF8P20161HSR3 比較
詳細並排比較 MRF8P20160HSR3 由 NXP Semiconductors 與 MRF8P20161HSR3 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | MRF8P20160HSR3 | MRF8P20161HSR3 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | MRF8P20160HSR3 | — |
| 電晶體類型 | N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Lateral MOSFET (RF Power) |
| Technology | HV8 lateral RF MOSFET | — |
| Frequency Band | 1880 MHz to 2025 MHz | — |
| Output Power (Average) | 37 W (Single-Carrier W-CDMA) | — |
| Drain Supply Voltage (VDD) | 28 Vdc | — |
| Quiescent Drain Current (IDQA) | 550 mA | — |
| Power Gain (Typ) | 16.5 dB at 1.92 GHz | — |
| Test Frequency | 1.92 GHz | 1.92 GHz |
| 封裝 / 外殼 | NI-780S-4 (ceramic flanged) | — |
| 安裝方式 | Screw-down flange (through-hole) | — |
| Operating Class | Class AB or Class C | Class AB or Class C |
| Junction Temperature (Max) | 200 C (S-prefix sample-tested) | — |
| Application | W-CDMA / LTE / TD-SCDMA base-station PA | CDMA / cellular base station RF power amplifier |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance status] |
| Lead Finish | [DATA_NEEDED: lead finish] | — |
| Frequency Range | — | 1880 MHz to 2025 MHz |
| Drain Supply Voltage (Vdd) | — | 28 V |
| Average Output Power | — | 37 W (W-CDMA) |
| Small-Signal Gain | — | 16.4 dB at 1.92 GHz |
| Quiescent Drain Current (Idq) | — | 550 mA |
| 封裝 | — | NI-780S-4 (NI-780HS-4) ceramic air-cavity, surface mount |
| 安裝類型 | — | Surface mount with screw-down flange |
| Polarity / Channel | — | N-Channel enhancement-mode lateral |
| Modulation Support | — | W-CDMA, LTE, multi-carrier GSM |
| Operating Mode | — | Enhancement mode |