MRF8S9220HSR3 vs SRF8S9260HSR3 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng MRF8S9220HSR3 sa pamamagitan ng NXP Semiconductors at SRF8S9260HSR3 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

NXP Semiconductors
MRF8S9220HSR3 MRF8S9220HSR3 - 65W 920-960MHz W-CDMA RF Power LDMOS | NXP

MRF8S9220HSR3 - 65W 920-960MHz W-CDMA RF Power LDMOS | NXP

MRF8S9220HSR3 ✓ Nakahanda
NXP Semiconductors
SRF8S9260HSR3 SRF8S9260HSR3 - 75W 920-960MHz RF Power MOSFET | NXP

SRF8S9260HSR3 - 75W 920-960MHz RF Power MOSFET | NXP

SRF8S9260HSR3 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro MRF8S9220HSR3 SRF8S9260HSR3
Brand NXP Semiconductors NXP Semiconductors
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Technology LDMOS (Laterally Diffused MOSFET), N-Channel Enhancement-Mode —
Frequency Range 920 MHz to 960 MHz —
Output Power (Avg, W-CDMA) 65 W —
Operating Drain Voltage (VDD) 28 V (typical) —
Drain-Source Voltage Rating (VDS max) 70 V —
Power Gain (typ) 19.4 dB —
Test Drain Current 1.6 A —
Drain Efficiency (typ) [DATA_NEEDED: drain efficiency %] —
Packhaging / Kaso NI-780S (Case 465-06, Style 1), ceramic —
Package Dimensions (L x W x H) 20.7 mm x 9.91 mm x 4.32 mm —
Configuration Single-ended, 1-carrier W-CDMA —
Temperature ng Junction na Operasyon -65 C to +225 C —
Uri ng Pagpapasok Surface Mount / Flange Mount Screw-mount, flange
Lead-Free / RoHS Lead Free (per DigChip listing) —
Modulation Support W-CDMA, CDMA, LTE (Class AB / Class C) —
Manufacturer — NXP Semiconductors (Freescale legacy)
Part Family — MRF8S9260 / SRF8S9260 HV8 series
Uri ng Transistor — N-Channel Enhancement-Mode Lateral MOSFET
Application Band — 920-960 MHz (usable 865-960 MHz)
Output Power (Avg) — 75 W (W-CDMA, 28 V)
Drain-Source Voltage (VDS) — 28 V
Quiescent Drain Current (IDQ) — 1.7 A typical
Power Gain (Gps) — 18.6 dB at 960 MHz
Drain Efficiency — [DATA_NEEDED: drain efficiency %]
Packhaging — NI-880S (ceramic, flanged)
Operating Mode — Class AB or Class C
Modulation Targets — CDMA, W-CDMA, multicarrier GSM
Tindminan RoHS — Compliant
Lead-Free — Yes

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