MRF8S9220HSR3 vs SRF8S9260HSR3 比較
詳細並排比較 MRF8S9220HSR3 由 NXP Semiconductors 與 SRF8S9260HSR3 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | MRF8S9220HSR3 | SRF8S9260HSR3 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Technology | LDMOS (Laterally Diffused MOSFET), N-Channel Enhancement-Mode | — |
| Frequency Range | 920 MHz to 960 MHz | — |
| Output Power (Avg, W-CDMA) | 65 W | — |
| Operating Drain Voltage (VDD) | 28 V (typical) | — |
| Drain-Source Voltage Rating (VDS max) | 70 V | — |
| Power Gain (typ) | 19.4 dB | — |
| Test Drain Current | 1.6 A | — |
| Drain Efficiency (typ) | [DATA_NEEDED: drain efficiency %] | — |
| 封裝 / 外殼 | NI-780S (Case 465-06, Style 1), ceramic | — |
| Package Dimensions (L x W x H) | 20.7 mm x 9.91 mm x 4.32 mm | — |
| Configuration | Single-ended, 1-carrier W-CDMA | — |
| 工作接面溫度 | -65 C to +225 C | — |
| 安裝類型 | Surface Mount / Flange Mount | Screw-mount, flange |
| Lead-Free / RoHS | Lead Free (per DigChip listing) | — |
| Modulation Support | W-CDMA, CDMA, LTE (Class AB / Class C) | — |
| Manufacturer | — | NXP Semiconductors (Freescale legacy) |
| Part Family | — | MRF8S9260 / SRF8S9260 HV8 series |
| 電晶體類型 | — | N-Channel Enhancement-Mode Lateral MOSFET |
| Application Band | — | 920-960 MHz (usable 865-960 MHz) |
| Output Power (Avg) | — | 75 W (W-CDMA, 28 V) |
| Drain-Source Voltage (VDS) | — | 28 V |
| Quiescent Drain Current (IDQ) | — | 1.7 A typical |
| Power Gain (Gps) | — | 18.6 dB at 960 MHz |
| Drain Efficiency | — | [DATA_NEEDED: drain efficiency %] |
| 封裝 | — | NI-880S (ceramic, flanged) |
| Operating Mode | — | Class AB or Class C |
| Modulation Targets | — | CDMA, W-CDMA, multicarrier GSM |
| RoHS 狀態 | — | Compliant |
| Lead-Free | — | Yes |