MT41K256M16HA-15EM:E vs H5TC4G63MFR-PBA Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MT41K256M16HA-15EM:E sa pamamagitan ng Micron Technology at H5TC4G63MFR-PBA sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT41K256M16HA-15EM:E - 4Gb DDR3L SDRAM 256Mx16 | Micron
MT41K256M16HA-15EM:E ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MT41K256M16HA-15EM:E | H5TC4G63MFR-PBA |
|---|---|---|
| Brand | Micron Technology | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gbit | 4 Gb |
| Organisasyon | 256M x 16 | 256M x 16 |
| Volte ng Pagbibigay | 1.35 V (1.5V compatible) | — |
| Rate ng Data | 1333 Mbps (DDR3L-1333) | 1866 Mbps (PC3L-14900) |
| Latensya ng CAS | 15 | — |
| Packhaging | 96-ball FBGA (9x14mm) | 96-ball FBGA |
| Uri ng Pagpapasok | Surface Mount | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | — |
| Tindminan RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Bilang ng Pins | 96 | — |
| Access Time | 13.75 ns | — |
| Clock Frequency | 800 MHz | — |
| Interface | Parallel | — |
| Supply Voltage (VDD/VDDQ) | — | 1.35V (+0.100V/-0.067V) |
| Number of Banks | — | 8 |
| Burst Length | — | BL8, BL4 (with burst chop) |
| CAS Latency (CL) | — | Programmable |
| CAS Write Latency (CWL) | — | Programmable |
| Additive Latency | — | Programmable |
| On-Die Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| Auto Self-Refresh | — | Yes |
| Temperature-Compensated Self-Refresh | — | Yes |
| Process Technology | — | 30nm-class |
| RoHS Compliant | — | Yes (Lead-Free & Halogen-Free) |