MW7IC2040GNR1 vs MW7IC2040NR1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MW7IC2040GNR1 sa pamamagitan ng NXP Semiconductors at MW7IC2040NR1 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MW7IC2040NR1 - 4W RF LDMOS Wideband PA | NXP | Cellular BTS
MW7IC2040NR1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MW7IC2040GNR1 | MW7IC2040NR1 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | RF Amplifiers | RF Amplifiers |
| Katayuan ng Lifecycle | Obsolete | Aktibo |
| Manufacturer | NXP Semiconductors (formerly Freescale/Motorola) | NXP Semiconductors (formerly Freescale / Motorola Semiconductor) |
| Part Family | MW7IC2040 (NR1 / GNR1 / NBR1) | — |
| Device Type | RF LDMOS Wideband Integrated Power Amplifier | — |
| Frequency Range | 1805 MHz to 1990 MHz | — |
| Output Power (CW) | 4 W typical | — |
| Power Supply Voltage | 24 V to 32 V (28 V nominal) | — |
| Kuru-kuryente ng Kapayapaan | 75 mA (typical, per web data) | — |
| Small-Signal Gain | 23.5 dB (typical at 1.99 GHz, per web data) | 23.5 dB |
| RF Type | General Purpose / Cellular Base Station PA | General Purpose / Wideband Integrated Power Amplifier |
| Modulation Support | W-CDMA, GSM/EDGE, multi-carrier cellular | — |
| On-Chip Matching | Yes (input/output 50 ohm) | — |
| Number of Stages | 2 (multi-stage integrated) | — |
| Technology | LDMOS (Laterally Diffused MOS) | RF LDMOS (Laterally Diffused MOSFET) |
| Packhaging / Kaso | TO-270-16 Variant, Gull Wing (TO-270 WBL-16) | TO-270 WBL-16 (TO-270-16 Variant, Flat Leads), plastic over-mold surface-mount |
| Package Body Material | Plastic / Epoxy overmold | — |
| Uri ng Pagpapasok | Surface Mount (Gull Wing leads) | Surface Mount (PCB solderable with bottom drain ground plane) |
| Packaging | Tape & Reel | — |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | — |
| ESD Protection | Yes (integrated) | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant (per NXP product family) |
| Lead-Free | [DATA_NEEDED: lead-free status] | — |
| Wala sa Halogen | Not Compliant (per GlobalSpec listing) | — |
| Fungsi | — | Two-stage integrated power amplifier with on-chip matching |
| Frequency Range (Application) | — | 1805 MHz to 1990 MHz (covers 1805-1880 MHz DCS/PCS and 1930-1990 MHz UMTS) |
| Frequency Range (Characterization) | — | 100 MHz to 1 GHz |
| Supply Voltage (Vdd) | — | 24 V to 32 V (nominal 28 V) |
| Maximum Supply Voltage | — | 32 V |
| Quiescent Supply Current (Idq) | — | 75 mA |
| Output Power (avg, W-CDMA) | — | 4 W (typical at rated operating conditions) |
| Modulation Compatibility | — | Single W-CDMA, GSM/EDGE, UMTS, LTE, all typical cellular BTS formats |
| Bilang ng Pin | — | 16 |
| Operating Mode | — | Class-AB (multi-stage, externally biased) |
| Lead Configuration | — | Flat leads (surface-mount) |
| Temperature na Operasyon | — | -40 C to +85 C (industrial base-station operating ambient; per Freescale/NXP LDMOS module family) |
| Packaging Type | — | Tape & Reel (per part suffix NR1 suffix convention) |