MW7IC2240NBR1 vs MW7IC2240NR1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MW7IC2240NBR1 sa pamamagitan ng NXP Semiconductors at MW7IC2240NR1 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MW7IC2240NR1 - 4W W-CDMA RF LDMOS PA, 2110-2170 MHz | NXP
MW7IC2240NR1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MW7IC2240NBR1 | MW7IC2240NR1 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | RF Amplifiers | RF Amplifiers |
| Katayuan ng Lifecycle | Obsolete | Aktibo |
| Frequency Range | 2110 MHz to 2170 MHz (usable 2000-2200 MHz) | 2110 MHz to 2170 MHz (usable 2000-2200 MHz) |
| Modulation / RF Type | W-CDMA (also TD-SCDMA, LTE) | — |
| Output Power (Average) | 4 W Avg. @ 2112.5 MHz, single-carrier W-CDMA | — |
| Supply Voltage (VDD) | 28 V (rated 24 V to 32 V operation) | — |
| Quiescent Current Stage 1 (IDQ1) | 90 mA | — |
| Quiescent Current Stage 2 (IDQ2) | 420 mA | — |
| Minimum Gain | 15 dB (typical 30 dB) | — |
| Input VSWR | 5:1 | 5:1 |
| Output VSWR | 5:1 | 5:1 |
| Nominal Impedance | 50 ohm (on-chip matched) | 50 ohm (DC-blocked input, >3 ohm output) |
| P1dB (Output) | 46 dBm (per distributor listing) | — |
| Technology | RF LDMOS (multi-stage integrated) | LDMOS (Laterally Diffused MOSFET) |
| Packhaging | TO-272 WB-16 (over-molded plastic, 16-lead) | TO-270 WBL-16 (TO-270WB16), 16-pin ceramic |
| Uri ng Pagpapasok | Surface Mount | Surface Mount / flange mount with ground pad |
| Terminal Finish | Matte Tin (Sn) | — |
| Package Body Material | Plastic / Epoxy | — |
| Operating Mode | 100% PAR tested for W-CDMA-like signals | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS compliance] | — |
| Fungsi | — | RF Power Amplifier (W-CDMA, multi-stage) |
| Average Output Power | — | 4 W (W-CDMA, 28 V) |
| Power Gain (Min) | — | 15 dB |
| Drain Supply Voltage | — | 24 V to 32 V (28 V typical) |
| Spurious Emissions | — | Below -60 dBc from 100 mW to 10 W CW Pout |
| On-Chip Matching | — | Yes (input 50 ohm DC-blocked, partial output) |
| Quiescent Current Compensation | — | Integrated with temperature compensation |
| Enable Function | — | Yes |
| Operating Modulation Formats | — | W-CDMA, TD-SCDMA, LTE-FDD, multi-carrier |