NT5AD512M16C4-HR vs K4A8G165WB-BCTD Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng NT5AD512M16C4-HR sa pamamagitan ng Nanya Technology at K4A8G165WB-BCTD sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Nanya Technology
NT5AD512M16C4-HR - 8Gbit DDR4 SDRAM 512Mx16 | Nanya Tech
NT5AD512M16C4-HR ✓ NakahandaSamsung Electronics
K4A8G165WB-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WB-BCTD ✓ NakahandaPagsanggunian na paghahambing
| Parametro | NT5AD512M16C4-HR | K4A8G165WB-BCTD |
|---|---|---|
| Brand | Nanya Technology | Samsung Electronics |
| Kategorya | Memory ICs | DRAM |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Organisasyon | 512M x 16 | 512M x 16 |
| Density | 8 Gbit | 8 Gb |
| Volte ng Pagbibigay | 1.2 V | — |
| Rate ng Data | 1.333 GHz (DDR4-2666) | 2666 Mbps |
| Temperature na Operasyon | 0°C to +95°C | 0C to +85C |
| Packhaging | FBGA-96 (TFBGA) | 96FBGA |
| Bilang ng Pins | 96 | — |
| Auto Self-Refresh | Yes | — |
| Built-in Temperature Sensor | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | Supported (DM per x16 lane) |
| Write Leveling | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | Supported |
| CRC Function | Yes | — |
| RoHS | Compliant | — |
| Supply Voltage (VDD) | — | 1.2 V |
| Die Generation | — | B-die |
| Uri ng Pagpapasok | — | Surface Mount (BGA) |
| Interface | — | DDR4 (parallel, double data rate) |
| Dynamic On-Die Termination | — | Supported |
| Latensya ng CAS | — | [DATA_NEEDED: CAS Latency] |
| Refresh Rate | — | [DATA_NEEDED: Refresh Rate] |
| Tindminan RoHS | — | Compliant (per JLCPCB listing: ROHS) |
| Moisture Sensitivity Level | — | [DATA_NEEDED: MSL Level] |