NT5CC256M16CN-FLNA vs K4B4G1646E-BYMA Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng NT5CC256M16CN-FLNA sa pamamagitan ng Nanya Technology at K4B4G1646E-BYMA sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Nanya Technology
NT5CC256M16CN-FLNA NT5CC256M16CN-FLNA - 4Gb DDR3L SDRAM 256Mx16 | Nanya

NT5CC256M16CN-FLNA - 4Gb DDR3L SDRAM 256Mx16 | Nanya

NT5CC256M16CN-FLNA ✓ Nakahanda
Samsung Electronics
K4B4G1646E-BYMA K4B4G1646E-BYMA - 4Gb DDR3L SDRAM 1866MHz | Samsung

K4B4G1646E-BYMA - 4Gb DDR3L SDRAM 1866MHz | Samsung

K4B4G1646E-BYMA ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro NT5CC256M16CN-FLNA K4B4G1646E-BYMA
Brand Nanya Technology Samsung Electronics
Kategorya Memory ICs Memory ICs
Katayuan ng Lifecycle Aktibo Aktibo
Presyo ng Yunit (USD) — $14.32
Uri ng Memory DDR3L SDRAM DDR3L SDRAM
Density 4 Gb 4 Gb
Organisasyon 256M x 16 256M x 16
Supply Voltage (VDD) 1.35 V (1.283 V to 1.45 V) —
Supply Voltage (VDDQ) 1.35 V (1.283 V to 1.45 V) —
Rate ng Data 1866 Mbps (max) 1866 Mbps/pin
Latensya ng CAS 13 (at 1866 Mbps) [DATA_NEEDED: CAS Latency]
Burst Length 8, 4 [DATA_NEEDED: Burst Length]
Number of Banks 8 —
Packhaging 96-ball FBGA FBGA-96
Hanay ng Temperature na Operasyon 0C to +95C (TC) commercial, -40C to +95C industrial, -40C to +105C automotive —
Storage Temperature -55C to +100C —
Refresh Auto-refresh, self-refresh, TCSR —
RoHS Compliant Compliant
Lead-Free Yes —
Volte ng Pagbibigay — 1.35 V (1.28 V to 1.575 V)
Clock Frequency — 933 MHz
Temperature na Operasyon — 0°C to +95°C
Operating Current — 14 mA
Standby Current — 2 mA, 3 mA
Uri ng Pagpapasok — Surface Mount
Bilang ng Pins — 96

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