NT5CC256M16ER-FLNA vs NT5CC256M16CN-FLNA Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng NT5CC256M16ER-FLNA sa pamamagitan ng Nanya Technology at NT5CC256M16CN-FLNA sa pamamagitan ng Nanya Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Nanya Technology
NT5CC256M16ER-FLNA - 4Gb DDR3L SDRAM 256Mx16 | Nanya
NT5CC256M16ER-FLNA ✓ NakahandaNanya Technology
NT5CC256M16CN-FLNA - 4Gb DDR3L SDRAM 256Mx16 | Nanya
NT5CC256M16CN-FLNA ✓ NakahandaPagsanggunian na paghahambing
| Parametro | NT5CC256M16ER-FLNA | NT5CC256M16CN-FLNA |
|---|---|---|
| Brand | Nanya Technology | Nanya Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gb |
| Organisasyon | 256M x 16 | 256M x 16 |
| Volte ng Pagbibigay | 1.35 V (1.283 V to 1.45 V) | — |
| I/O Voltage | 1.5 V | — |
| Rate ng Data | 1866 Mbps (max) | 1866 Mbps (max) |
| Packhaging | 96-ball TFBGA | 96-ball FBGA |
| Number of Terminals | 96 | — |
| Hanay ng Temperature na Operasyon | 0°C to +95°C (commercial/industrial) | 0C to +95C (TC) commercial, -40C to +95C industrial, -40C to +105C automotive |
| Latensya ng CAS | Programmable (e.g., 13, 14) | 13 (at 1866 Mbps) |
| Burst Length | 8, 4 (with burst chop) | 8, 4 |
| Number of Banks | 8 | 8 |
| Refresh | Auto and self refresh | Auto-refresh, self-refresh, TCSR |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Supply Voltage (VDD) | — | 1.35 V (1.283 V to 1.45 V) |
| Supply Voltage (VDDQ) | — | 1.35 V (1.283 V to 1.45 V) |
| Storage Temperature | — | -55C to +100C |