SPW47N60C3 vs STW45NM60-H Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng SPW47N60C3 sa pamamagitan ng Infineon at STW45NM60-H sa pamamagitan ng STMicroelectronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
STMicroelectronics
STW45NM60-H - 600V 45A MDmesh N-Channel Power MOSFET | STMicroelectronics
STW45NM60-H ✓ NakahandaPagsanggunian na paghahambing
| Parametro | SPW47N60C3 | STW45NM60-H |
|---|---|---|
| Brand | Infineon | STMicroelectronics |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Part Number | SPW47N60C3 | — |
| Manufacturer | Infineon Technologies AG | — |
| Technology | CoolMOS C3 (superjunction) | MDmesh (super-junction) |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (V(BR)DSS) | 650 V | — |
| Continuous Drain Current (ID) at Tc | 47 A | — |
| Power Dissipation (PD) at Tc | 415 W | — |
| RDS(on) (typical) | 70 mOhm [DATA_NEEDED: VGS test condition] | — |
| Gate Charge (Qg, typical) | [DATA_NEEDED: nanocoulombs] | — |
| Output Capacitance Eoss @ 400V | Very low (per C3 series datasheet) | — |
| Packhaging | TO-247-3-1 (PG-TO247-3-1) through-hole | TO-247-3 (through-hole) |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Hanay ng Temperature na Operasyon | -55C to +150C (junction, typical for CoolMOS C3) | -55 °C to +150 °C (TJ) |
| Configuration | Single N-channel, 3 pins (G, D, S) | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Level ng MSL | N/A (through-hole) | — |
| Series | CoolMOS C3 (600V generation) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 600 V (650 V at TJMAX) |
| Continuous Drain Current (ID) | — | 45 A at Tc = 25 °C |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) | — | 417 W at Tc = 25 °C |
| On-Resistance (RDS(on)) | — | 0.09 Ω typical at VGS = 10 V |
| Gate-Source Threshold Voltage (VGS(th)) | — | 4 V typical |
| Gate Charge (Qg) | — | [DATA_NEEDED: typical total gate charge] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: input capacitance] |
| Avalanche Rating | — | 100% avalanche tested |
| dv/dt Capability | — | High |