SS0530_R1_00001 vs SRVBS260NT3G Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng SS0530_R1_00001 sa pamamagitan ng Panjit at SRVBS260NT3G sa pamamagitan ng onsemi. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro SS0530_R1_00001 SRVBS260NT3G
Brand Panjit onsemi
Kategorya Diodes Diodes
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Panjit International Inc. onsemi
Diode Type Schottky Barrier Diode (SBD) —
Configuration Single, 1 Phase, 1 Element —
Reverse Voltage (VRRM) 30 V —
Average Rectified Forward Current (IF(AV)) 500 mA —
Forward Voltage Drop (VF) 430 mV @ 500 mA —
Packhaging SOD-123 SMB (surface mount, C-bend leads)
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pin 2 —
Hanay ng Temperature na Operasyon [DATA_NEEDED: operating temperature range] -55 C to +125 C
Forward Surge Current (IFSM) [DATA_NEEDED: IFSM] —
Reverse Leakage Current (IR) [DATA_NEEDED: IR at rated VR] —
Reverse Recovery Time (trr) [DATA_NEEDED: trr] —
Packaging Tape & Reel —
Tindminan RoHS Compliant Compliant
Technology Schottky (metal-semiconductor junction) —
Product Type — Schottky Power Rectifier (single diode)
Reverse Test Voltage (VRRM) — 60 V
Maximum Average Forward Current (IF(AV)) — 2 A
Maximum Forward Voltage (VF) — 0.63 V at 2 A
Peak Reflow Temperature — 260 C
Terminal Form — C BEND
Terminal Position — DUAL
Number of Terminals — 2
Package Shape — RECTANGULAR
Terminal Finish — Matte Tin
Diode Technology — Schottky Barrier (epitaxial construction, oxide passivation, metal overlay contact)

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita