SS0530_R1_00001 vs SRVBS260NT3G 比較
詳細並排比較 SS0530_R1_00001 由 Panjit 與 SRVBS260NT3G 由 onsemi. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | SS0530_R1_00001 | SRVBS260NT3G |
|---|---|---|
| 品牌 | Panjit | onsemi |
| 類別 | Diodes | Diodes |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Panjit International Inc. | onsemi |
| Diode Type | Schottky Barrier Diode (SBD) | — |
| Configuration | Single, 1 Phase, 1 Element | — |
| Reverse Voltage (VRRM) | 30 V | — |
| Average Rectified Forward Current (IF(AV)) | 500 mA | — |
| Forward Voltage Drop (VF) | 430 mV @ 500 mA | — |
| 封裝 | SOD-123 | SMB (surface mount, C-bend leads) |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 2 | — |
| 工作溫度範圍 | [DATA_NEEDED: operating temperature range] | -55 C to +125 C |
| Forward Surge Current (IFSM) | [DATA_NEEDED: IFSM] | — |
| Reverse Leakage Current (IR) | [DATA_NEEDED: IR at rated VR] | — |
| Reverse Recovery Time (trr) | [DATA_NEEDED: trr] | — |
| Packaging | Tape & Reel | — |
| RoHS 狀態 | Compliant | Compliant |
| Technology | Schottky (metal-semiconductor junction) | — |
| Product Type | — | Schottky Power Rectifier (single diode) |
| Reverse Test Voltage (VRRM) | — | 60 V |
| Maximum Average Forward Current (IF(AV)) | — | 2 A |
| Maximum Forward Voltage (VF) | — | 0.63 V at 2 A |
| Peak Reflow Temperature | — | 260 C |
| Terminal Form | — | C BEND |
| Terminal Position | — | DUAL |
| Number of Terminals | — | 2 |
| Package Shape | — | RECTANGULAR |
| Terminal Finish | — | Matte Tin |
| Diode Technology | — | Schottky Barrier (epitaxial construction, oxide passivation, metal overlay contact) |