BSC520N15NS3 vs BSC520N15NS3G Karşılaştırma
Ayrıntılı yan yana karşılaştırma BSC520N15NS3 tarafından Infineon ve BSC520N15NS3G tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | BSC520N15NS3 | BSC520N15NS3G |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Technology | OptiMOS 3, N-channel trench MOSFET | OptiMOS 3 (trench-gate N-channel) |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID, TC=25C) | 21 A | — |
| Pulsed Drain Current (IDM) | 84 A | — |
| On-State Resistance RDS(on) max (VGS=10V) | 52 mOhm | — |
| Gate-Source Voltage VGS max | +/- 20 V | — |
| Gate Threshold Voltage VGS(th) typ | 3 V | — |
| Power Dissipation (TC=25C) | 57 W | — |
| İşletim Jant Sıcaklığı | -55C to +150C | -55C to +150C |
| Paket | PG-TDSON-8-5 (SuperSO8, 5x6 mm) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Montaj Türü | Surface Mount | Surface Mount |
| MSL Seviyesi | 1 | — |
| RoHS Durumu | Compliant | — |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Body Diode | Intrinsic, avalanche-rated | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSC520N15NS3 G |
| Drain-Source Voltage (VDS) max | — | 150 V |
| Continuous Drain Current (ID) max at TC=25C | — | 21 A |
| On-Resistance RDS(on) max | — | 52 mΩ at VGS=10 V |
| Power Dissipation (Ptot) at TC=25C | — | 57 W |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Pin Sayısı | — | 8 |
| Lead Plating | — | Pb-free |
| RoHS Compliance | — | Compliant |
| JEDEC Qualification | — | Qualified per JEDEC |
| Channel Type | — | N-Channel (normal level) |
| Typical Application | — | DC-DC conversion, synchronous rectification |