IRF7854TRPBF vs IRF7380TRPBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRF7854TRPBF tarafından Infineon ve IRF7380TRPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRF7854TRPBF | IRF7380TRPBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Birim Fiyat (USD) | $0,48 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at Ta=25°C | 10 A | — |
| Power Dissipation (PD) at Ta=25°C | 2.5 W | — |
| On-Resistance RDS(on) max at VGS=10V | 13.4 mΩ | — |
| Gate-Source Threshold Voltage VGS(th) max | 4.9 V | — |
| Total Gate Charge Qg | 27 nC | — |
| Paket | SO-8 | SO-8 (8-SO, SOIC-8) |
| Montaj Türü | Surface Mount | Surface Mount |
| Technology | HEXFET (planar N-channel) | IR MOSFET™ (Infineon HEXFET-style planar N-ch) |
| İşletim Sıcaklığı Aralığı | -55°C to +150°C (TJ) | — |
| Lead-Free / RoHS | Yes (PBF suffix, lead-free) | Yes (Pb-free plating, suffix PBF) |
| Qualification | JEDEC industrial, Normal level | — |
| Solder Process | Reflow and wave-solderable | — |
| Gate Drive Voltage (recommended) | 10 V | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRF7380TRPBF |
| Configuration | — | Dual N-Channel MOSFET Array (2 independent FETs in one package) |
| Drain-to-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) | — | 3.6 A |
| On-Resistance RDS(on) max | — | 73 mOhm at VGS = 10 V |
| Total Power Dissipation (PD) | — | 2 W |
| İşletim Jant Sıcaklığı | — | -55 C to +150 C |
| Gate Drive Voltage (typical) | — | 10 V (full RDS(on)); logic-level not guaranteed |
| Packaging | — | Tape & Reel (suffix TR) |
| Primary Application | — | High-frequency DC-DC converters |