IRFZ24NPBF vs IRF640NSTRLPBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRFZ24NPBF tarafından Infineon ve IRF640NSTRLPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRFZ24NPBF | IRF640NSTRLPBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 55 V | 200 V |
| Continuous Drain Current (ID) at TC=25C | 17 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) | ± 20 V | — |
| RDS(on) at VGS=10V | 70 mOhm (max) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge (Qg) | 13.3 nC | 44.7 nC |
| Power Dissipation (PD) at TC=25C | 45 W | — |
| İşletim Jant Sıcaklığı | -55C to +175C | — |
| Paket | TO-220AB (through hole) | D2PAK (TO-263AB), surface mount, 3-pin (2+tab) |
| Montaj Türü | Through Hole | Surface Mount (Tape and Reel) |
| Technology | HEXFET planar cell | HEXFET (5th generation, trench MOSFET) |
| Switching Frequency Range | Optimized for < 100 kHz | — |
| RoHS Durumu | Compliant | Compliant |
| Lead-Free | Yes (PBF suffix) | — |
| Qualification | JEDEC standard | — |
| Channel Mode | Enhancement | — |
| Continuous Drain Current (ID, Tc=25C) | — | 18 A |
| Maximum Power Dissipation (PD, Tc=25C) | — | 150 W |
| On-Resistance (RDS(on)) at VGS=10V | — | 0.15 ohm |
| Gate-to-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: Crss] |
| İşletim Jant Sıcaklığı Aralığı | — | -55C to +175C |
| Lead-Free (PbF) | — | Yes |