IRFZ24NPBF vs IRF640NSTRLPBF 比較
詳細並排比較 IRFZ24NPBF 由 Infineon 與 IRF640NSTRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFZ24NPBF | IRF640NSTRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 55 V | 200 V |
| Continuous Drain Current (ID) at TC=25C | 17 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) | ± 20 V | — |
| RDS(on) at VGS=10V | 70 mOhm (max) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge (Qg) | 13.3 nC | 44.7 nC |
| Power Dissipation (PD) at TC=25C | 45 W | — |
| 工作接面溫度 | -55C to +175C | — |
| 封裝 | TO-220AB (through hole) | D2PAK (TO-263AB), surface mount, 3-pin (2+tab) |
| 安裝類型 | Through Hole | Surface Mount (Tape and Reel) |
| Technology | HEXFET planar cell | HEXFET (5th generation, trench MOSFET) |
| Switching Frequency Range | Optimized for < 100 kHz | — |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes (PBF suffix) | — |
| Qualification | JEDEC standard | — |
| Channel Mode | Enhancement | — |
| Continuous Drain Current (ID, Tc=25C) | — | 18 A |
| Maximum Power Dissipation (PD, Tc=25C) | — | 150 W |
| On-Resistance (RDS(on)) at VGS=10V | — | 0.15 ohm |
| Gate-to-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: Crss] |
| 工作接面溫度範圍 | — | -55C to +175C |
| Lead-Free (PbF) | — | Yes |