M29F400FT55N3E2 vs M29F400FT55N3F2 Karşılaştırma
Ayrıntılı yan yana karşılaştırma M29F400FT55N3E2 tarafından Micron Technology ve M29F400FT55N3F2 tarafından Micron TechnologyAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Micron Technology
M29F400FT55N3E2 - 4Mbit 5V Parallel NOR Flash, 55ns | Micron
M29F400FT55N3E2 ✓ AktifMicron Technology
M29F400FT55N3F2 - 4Mbit 5V Parallel NOR Flash 55ns | Micron
M29F400FT55N3F2 ✓ AktifÖzellik Karşılaştırması
| Parametre | M29F400FT55N3E2 | M29F400FT55N3F2 |
|---|---|---|
| Marka | Micron Technology | Micron Technology |
| Kategori | Memory ICs | EEPROM |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Bellek Türü | NOR Flash (Parallel) | NOR Flash (SLC) |
| Density | 4 Mbit (512K x 8) | — |
| Access Time | 55 ns | 55 ns |
| Besleme Gerilimi | 5 V (single supply) | 5 V |
| Arayüz | Parallel | Parallel |
| Boot Block Architecture | Top boot (FT variant) | — |
| Paket | 44-SO (SOP-44) | 44-SO (SOP-44) |
| Montaj Türü | Surface Mount | Surface Mount |
| Programming Supply | No 12 V VPP required (5.0 V programming) | — |
| Command Set | JEDEC standard compatible | — |
| İşletim Sıcaklığı | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: min operating temperature] |
| Program/Erase Endurance | [DATA_NEEDED: Program/Erase Cycles] | [DATA_NEEDED: endurance cycles] |
| Data Retention | [DATA_NEEDED: Data Retention] | — |
| Active Read Current | [DATA_NEEDED: Active Current] | — |
| Standby Current | [DATA_NEEDED: Standby Current] | — |
| Block Protection | Hardware block protection | — |
| MSL Seviyesi | [DATA_NEEDED: Moisture Sensitivity Level] | — |
| RoHS Durumu | [DATA_NEEDED: RoHS Status] | — |
| Bellek Boyutu | — | 4 Mbit |
| Organizasyon | — | 256K x 16 |
| Block Architecture | — | Top boot block |
| Temperature Grade | — | Auto Grade 3, up to +125C (per Micron ordering code) |
| Compliance Suffix | — | F2 (RoHS-compliant, lead-free plating) |
| Programming Voltage | — | Single supply (no 12 V VPP required) |
| Technology | — | Floating-gate NOR cell, charge-pump program/erase |
| Max Standby Current | — | [DATA_NEEDED: standby current] |