M29F400FT55N3E2 vs M29F400FT55N3F2 比較
詳細並排比較 M29F400FT55N3E2 由 Micron Technology 與 M29F400FT55N3F2 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Micron Technology
M29F400FT55N3E2 - 4Mbit 5V Parallel NOR Flash, 55ns | Micron
M29F400FT55N3E2 ✓ 啟用中規格比較
| 參數 | M29F400FT55N3E2 | M29F400FT55N3F2 |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | EEPROM |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | NOR Flash (Parallel) | NOR Flash (SLC) |
| Density | 4 Mbit (512K x 8) | — |
| Access Time | 55 ns | 55 ns |
| 供應電壓 | 5 V (single supply) | 5 V |
| 介面 | Parallel | Parallel |
| Boot Block Architecture | Top boot (FT variant) | — |
| 封裝 | 44-SO (SOP-44) | 44-SO (SOP-44) |
| 安裝類型 | Surface Mount | Surface Mount |
| Programming Supply | No 12 V VPP required (5.0 V programming) | — |
| Command Set | JEDEC standard compatible | — |
| 工作溫度 | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: min operating temperature] |
| Program/Erase Endurance | [DATA_NEEDED: Program/Erase Cycles] | [DATA_NEEDED: endurance cycles] |
| Data Retention | [DATA_NEEDED: Data Retention] | — |
| Active Read Current | [DATA_NEEDED: Active Current] | — |
| Standby Current | [DATA_NEEDED: Standby Current] | — |
| Block Protection | Hardware block protection | — |
| MSL 等級 | [DATA_NEEDED: Moisture Sensitivity Level] | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS Status] | — |
| 記憶體容量 | — | 4 Mbit |
| 組織 | — | 256K x 16 |
| Block Architecture | — | Top boot block |
| Temperature Grade | — | Auto Grade 3, up to +125C (per Micron ordering code) |
| Compliance Suffix | — | F2 (RoHS-compliant, lead-free plating) |
| Programming Voltage | — | Single supply (no 12 V VPP required) |
| Technology | — | Floating-gate NOR cell, charge-pump program/erase |
| Max Standby Current | — | [DATA_NEEDED: standby current] |