MRF6S18100NBR1 vs MRF5S19060NBR1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma MRF6S18100NBR1 tarafından NXP Semiconductors ve MRF5S19060NBR1 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | MRF6S18100NBR1 | MRF5S19060NBR1 |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Obsolete | Aktif |
| Transistor Türü | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power) |
| Application | RF Power Amplifier (GSM/GSM EDGE base station) | — |
| Frequency Range | 1805 MHz to 1990 MHz | — |
| Test Frequency | 1.99 GHz | — |
| Drain-Source Voltage (V(BR)DSS) | 68 V | — |
| Test Supply Voltage (VDD) | 28 V | — |
| Test Drain Current | 900 mA | — |
| Output Power (Pout) | 100 W | — |
| Power Gain (Gps) | 14.5 dB (typical at 1.99 GHz) | — |
| Drain Efficiency | [DATA_NEEDED: drain efficiency %] | — |
| Paket / Kas | TO-272 WB-4 | — |
| Supplier Device Package | TO-272 WB-4 | — |
| Montaj Türü | Surface Mount / Flange Mount | Surface Mount (SMD) |
| Configuration | Single, common-source | Dual Die (2 x N), Common Source |
| RoHS Durumu | Compliant (per NXP product page) | [DATA_NEEDED: RoHS compliance status] |
| Operating Mode | Class AB / Class C (per design) | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale Semiconductor) |
| Frequency Band | — | 1930 MHz to 1990 MHz |
| Output Power (P1dB) | — | 60 W (CW/peak) |
| Output Power (Average) | — | 12 W avg. |
| Drain Supply Voltage | — | 28 V (typical) |
| Drain-Source Voltage (Vdss) | — | 65 V (max) |
| Power Gain | — | 14 dB at 1.99 GHz |
| Drain Current | — | 750 mA (typical operating DC) |
| Paket | — | TO-272 WB-4 (overmolded plastic) |
| Pin Sayısı | — | 5 |
| Peak Reflow Temperature | — | 260 C |
| Maximum Power Dissipation (Absolute) | — | 218.8 W |
| Technology | — | Silicon LDMOS |
| MSL Seviyesi | — | [DATA_NEEDED: MSL moisture sensitivity level] |