MRF6S21100NR1 vs MRF6S21100NBR1 Karşılaştırma

Ayrıntılı yan yana karşılaştırma MRF6S21100NR1 tarafından NXP Semiconductors ve MRF6S21100NBR1 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

NXP Semiconductors
MRF6S21100NR1 MRF6S21100NR1 - 23W 2.11-2.17GHz RF Power LDMOS | NXP

MRF6S21100NR1 - 23W 2.11-2.17GHz RF Power LDMOS | NXP

MRF6S21100NR1 ✓ Aktif
NXP Semiconductors
MRF6S21100NBR1 MRF6S21100NBR1 - 23W RF Power LDMOS 2.11-2.17GHz | NXP

MRF6S21100NBR1 - 23W RF Power LDMOS 2.11-2.17GHz | NXP

MRF6S21100NBR1 Obsolete

Özellik Karşılaştırması

Parametre MRF6S21100NR1 MRF6S21100NBR1
Marka NXP Semiconductors NXP Semiconductors
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Obsolete
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) NXP Semiconductors (formerly Freescale)
Transistor Türü LDMOS, N-Channel Enhancement-Mode Lateral MOSFET N-Channel Enhancement-Mode LDMOS (Lateral MOSFET)
Technology RF Power LDMOS (7th-generation) LDMOS, enhancement-mode
Frequency Band 2110 MHz to 2170 MHz (W-CDMA downlink) —
Drain Voltage (VDD) 28 V —
Drain Current (Continuous) 1.05 A —
Drain Current (Pulsed) [DATA_NEEDED: pulsed drain current value] —
Power Gain 14.5 dB typical at 2.11 GHz —
Output Power (Pout) 23 W average (W-CDMA) —
Quiescent Current (IDQ) 1600 mA —
Paket / Kas TO-270 WB-4 (Case 1486-03, Style 1) TO-272 WB-4 (plastic over-molded)
Montaj Türü Surface Mount (plastic overmold) Surface Mount / Flange Mount with PCB thermal pad
Operating Mode Class AB —
Modulation Support W-CDMA, TDMA, CDMA, multi-carrier —
Drain-Source Breakdown (V(BR)DSS) 68 V (rated) —
RoHS Durumu [DATA_NEEDED: confirm RoHS compliance status] [DATA_NEEDED: RoHS status]
Operating Frequency Range — 2110 MHz to 2170 MHz
Drain Supply Voltage (Typical) — 28 V
Pout (Average, W-CDMA) — 23 W
Power Gain (Typical) — 14.5 dB
Operating Current (at Pout) — 1.05 A
Quiescent Current (IDQ, Typical) — 1600 mA
Drain Voltage Rated — 68 V
Supplier Device Package — TO-272BB
Application — W-CDMA base station, TD-SCDMA, multicarrier PA, cellular final-stage
Part Status — Obsolete
İşletim Sıcaklığı — [DATA_NEEDED: operating temperature range]

Dökümanlar & Kaynaklar

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