BSC026N04LSATMA1 - 40V N-Ch OptiMOS 2.6mΩ MOSFET | Infineon
MPN: BSC026N04LSATMA1 ✓ فعالBSC026N04LSATMA1 جائزہ
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal semiconductor switch used to commutate current in power-conversion circuits. Within the broader taxonomy, this part belongs to: power MOSFET → discrete semiconductor → transistor → semiconductor. N-channel MOSFETs such as the BSC026N04LSATMA1 conduct when a positive gate-source voltage (VGS) is applied, making them the preferred low-side and high-side switch in buck, boost, and half-bridge topologies.
Key differentiators include Infineon's OptiMOS™ 5 process technology, an integrated Schottky-like monolithically optimized body diode for reduced reverse-recovery charge (Qrr), and a gate charge (Qg) optimized for high-frequency operation. The 2.6 mΩ RDS(on) at VGS=10 V and thermally efficient PG-TDSON-8-6 package minimize conduction losses and improve power density. The low figure-of-merit (FOM = RDS(on) × Qg) makes this device well suited to server, telecom, and DC-DC converter designs switching at 300 kHz to 1 MHz.
Architecturally, the OptiMOS™ 5 generation uses a trench-gate structure that lowers cell pitch while improving avalanche ruggedness. The resulting die shrinks gate charge without sacrificing SOA, enabling high-current pulses up to 400 A (pulsed, limited by package). Compared to planar predecessors, switching losses are typically reduced by 30-50%.
Typical applications include synchronous rectification in 12 V and 24 V switched-mode power supplies (SMPS), server and datacom VRM stages, motor-drive H-bridges, hot-swap and OR-ing controllers, and battery protection circuits in power tools. The PG-TDSON-8-6 footprint is widely adopted across Infineon's OptiMOS™ family, simplifying multi-variant PCB designs.
When designing with this part, ensure the gate-drive voltage reaches 10 V for full RDS(on) rating, use a Kelvin-source connection where possible to suppress source-inductance ringing, and observe the 63 W (Tc) power dissipation limit at the case. The exposed pad must be soldered to a sufficient copper pour (≥1 sq inch) to maintain junction temperature within SOA. This page synthesizes drop-in alternatives, distributor pricing benchmarks, and design considerations beyond the manufacturer datasheet.
کے لیے ڈراپ اِن متبادل BSC026N04LSATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں BSC026N04LSATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, Operating Temperature Range, MSL Level, Continuous Drain Current (ID, Ta).
BSC019N04LSGATMA1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
BSC050N04LSGATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC016N04LSGATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
BSC014N04LSIATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC019N04LSTATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →NTMFS0D4N04X
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
BSC026N04LSATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS™ 5 N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | 40 V |
| Gate-Source Voltage (VGS) max | ±20 V |
| Continuous Drain Current (ID, Ta) | 23 A |
| Continuous Drain Current (ID, Tc=25°C) | 100 A |
| On-Resistance RDS(on) typ @ VGS=10V | 2.6 mΩ |
| Power Dissipation (Ta) | 2.5 W |
| Power Dissipation (Tc) | 63 W |
| آپریٹنگ درجہ حرارت رینج | -55°C to +150°C |
| پیکیج | PG-TDSON-8-6 (TDSON 5x6 mm) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Technology | Trench-gate OptiMOS™ 5 |
| Channel Type | N-Channel |
| RoHS اسٹیٹس | Compliant |
BSC026N04LSATMA1 پن کنفیگریشن
| پن 1 | Gate — Gate drive input (VGS) |
| پن 2 | Source (Kelvin) — Kelvin source connection for gate return |
| پن 3 | Source — Source connection |
| پن 4 | Source — Source connection |
| پن 5 | Source — Source connection |
| پن 6 | Source — Source connection |
| پن 7 | Source — Source connection |
| پن 8 | Drain (EP) — Drain and exposed thermal pad |
محفوظ آپریٹنگ ایریا (DC)
عام استعمالات
BSC026N04LSATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: Synchronous Rectification in 12V/24V SMPS, Server and Datacom VRM Stages, DC-DC Converters and POL Regulators, Hot-Swap and OR-ing Controllers, Motor Drive H-Bridges, Battery Protection and Power Tools.
Synchronous Rectification in 12V/24V SMPS
The BSC026N04LSATMA1 is optimized for synchronous-rectifier (SR) stages in 12 V and 24 V switched-mode power supplies, replacing Schottky diodes to cut rectification losses. Its 2.6 mΩ typical RDS(on) at VGS=10 V and integrated Schottky-like body diode deliver low Qrr, suppressing dead-time losses when the SR MOSFET body diode conducts. In a 300 kHz, 30 A buck converter, the SR MOSFET dissipates roughly ID² × RDS(on) = 30² × 2.6 mΩ = 2.34 W, which is comfortably within the 63 W Tc-rated dissipation on a 1 sq inch copper pad. The OptiMOS™ 5 trench-gate process also minimizes gate charge, reducing driver losses in high-frequency designs.
تجویز کردہ
Server and Datacom VRM Stages
In server, telecom, and datacom Voltage-Regulator-Module (VRM) designs, the BSC026N04LSATMA1 serves as the low-side synchronous FET in multi-phase buck converters powering CPUs, GPUs, and ASICs at 0.6-1.8 V from a 12 V bus. Its 2.6 mΩ RDS(on) and high pulsed-current capability (up to 100 A at Tc=25°C) suit the high di/dt and short-pulse duty cycles typical of VRM low-side switches. The PG-TDSON-8-6 footprint is shared across the entire OptiMOS™ 5 family, allowing PCB reuse across 30 A, 50 A, and 70 A design variants. Low Qrr keeps cross-conduction losses small at multi-MHz switching frequencies used in advanced CPU power delivery.
تجویز کردہ
DC-DC Converters and POL Regulators
The BSC026N04LSATMA1 is widely used in point-of-load (POL) DC-DC converters and buck/boost modules converting 12-24 V to lower system rails (5 V, 3.3 V, 1.8 V, 1.0 V). Its low RDS(on) of 2.6 mΩ at VGS=10 V yields high efficiency (>95%) even at heavy load, while the small PG-TDSON-8-6 footprint (5x6 mm) enables compact module designs. Designers favor this part for its low Qrr body diode, which minimizes dead-time-induced voltage spikes and EMI in CCM/DCM transitions. Combined with Infineon's XDPE controller family, this MOSFET builds a complete high-density POL solution for industrial and embedded systems.
تجویز کردہ
Hot-Swap and OR-ing Controllers
In hot-swap, OR-ing, and eFuse circuits that protect server backplanes from inrush current and reverse polarity, the BSC026N04LSATMA1 acts as the series pass element. Its 100 A pulsed drain current rating handles the transient inrush of plug-in cards, while the 2.6 mΩ RDS(on) keeps steady-state voltage drop low when the channel is fully on. The 40 V VDS rating comfortably exceeds the 12 V or 24 V bus plus transients. Designers can drive the gate with a controlled slew-rate controller to limit di/dt, leveraging the MOSFET's linear-mode operation during turn-on.
تجویز کردہ
Motor Drive H-Bridges
The BSC026N04LSATMA1 is well suited as a low-side or half-bridge switch in brushed DC motor drives and small BLDC/PMSM inverter stages up to a few hundred watts. Its 23 A continuous and 100 A pulsed current capability, plus 2.6 mΩ RDS(on), deliver high torque-per-amp efficiency in 12-24 V battery systems. The PG-TDSON-8-6 package dissipates up to 63 W Tc, allowing sustained motor currents without external heatsinking beyond the PCB copper pour. The trench-gate design also provides good avalanche ruggedness for the inductive kickback of motor windings during PWM switching.
تجویز کردہ
Battery Protection and Power Tools
In battery-powered tools, e-bikes, and portable equipment, the BSC026N04LSATMA1 is used as the low-side protection MOSFET or active discharge switch in 18-36 V battery packs. Its 40 V VDS handles multi-cell Li-ion stacks (4-7S), while the 2.6 mΩ RDS(on) minimizes voltage drop during high-current discharge pulses. The OptiMOS™ 5 process offers low Qrr for safe commutation during battery cut-off events, and the rugged PG-TDSON-8-6 package withstands the mechanical shock and thermal cycling typical of cordless tools. Designers combine this MOSFET with companion Infineon gate drivers for a complete battery-management solution.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا BSC026N04LSATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | BSC019N04LSGATMA1 | BSC050N04LSGATMA1 | BSC016N04LSGATMA1 | NTMFS0D4N04X |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi |
| Package | PG-TDSON-8-6 (5x6 mm) | PG-TDSON-8-6 (5x6 mm) - same | PG-TDSON-8-6 (5x6 mm) - same | PG-TDSON-8-6 (5x6 mm) - same | PG-TDSON-8-6 (5x6 mm) - same |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 40 V | 40 V |
| RDS(on) typ @ VGS=10V | 2.6 mΩ | 1.9 mΩ | 5.0 mΩ | 1.6 mΩ | 4.0 mΩ |
| Technology | OptiMOS™ 5 trench | OptiMOS™ 5 trench | OptiMOS™ 5 trench | OptiMOS™ 5 trench | onsemi trench |
اہم امتیازی خصوصیات
- Lower RDS(on) than BSC050N04LSGATMA1 in same footprint (بمقابلہBSC050N04LSGATMA1)
- Higher RDS(on) but better switching-loss/FOM trade-off vs BSC019N04LSGATMA1 (بمقابلہBSC019N04LSGATMA1)
- Smaller footprint than cross-brand equivalents in DPAK/TO-252 (بمقابلہNTMFS0D4N04X)
- Integrated Schottky-like body diode (بمقابلہStandard planar MOSFETs)
ڈیزائن نوٹس
Estimated: at full-load 23 A continuous and RDS(on) of 2.6 mΩ, conduction loss is approximately ID² × RDS(on) = 23² × 0.0026 = 1.37 W. The PG-TDSON-8-6 with 1 sq inch 1 oz copper pad has RθJA around 50 °C/W, giving a junction-temperature rise of ~69 °C above ambient. Ensure ambient temperature plus this rise stays below the 150 °C maximum junction rating; add a heatsink or expand copper pour if derating margin is tight.
Use the Kelvin-source pin (Pin 2) for the gate-driver return path to decouple the gate loop from the high-current source inductance. This suppresses gate-ring oscillations at high di/dt. Place input ceramic bypass capacitors (≥10 µF X7R) close to the drain pad, and route the high-current loop (drain-source-output inductor) as tight and short as possible to minimize parasitic inductance and EMI.
Do not drive the gate below the threshold voltage (typically 1-2 V) for high-current operation - this risks linear-mode operation and thermal runaway. Always ensure the driver can source/sink at least 2-4 A peak gate current to switch the OptiMOS™ 5 gate charge quickly. Verify the body-diode reverse-recovery (Qrr) and dead-time in synchronous-rectifier topologies to avoid cross-conduction losses.
The PG-TDSON-8-6 drain pad is the exposed thermal pad (Pin 8) and must be soldered directly to a copper pour on the top layer or inner layer via thermal vias. Use an array of 6-9 thermal vias (0.3 mm drill, 1 oz plating) under the pad to spread heat into inner copper planes. Avoid signal traces cutting through the drain-pad copper, as this reduces thermal conductivity and increases RDS(on) effective in operation.
تعمیل کی معلومات
RoHS compliant per Infineon product page; REACH compliant per EU SVHC declaration. Standard part is NOT AEC-Q100 qualified; for automotive applications, choose Infineon's automotive-graded variants in the IAUC family. Conflict-minerals compliant per Infineon CMRT declarations.
