BSC0902NSIATMA1 - 30V N-Ch OptiMOS MOSFET, PG-TDSON-8 | Infineon
MPN: BSC0902NSIATMA1 ✓ فعالBSC0902NSIATMA1 جائزہ
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently convert and regulate electrical energy. N-channel MOSFETs in the OptiMOS 30V family belong to the broader category of power MOSFETs -> discrete semiconductors -> power management components, optimized for low RDS(on), low gate charge, and high switching frequency to minimize conduction and switching losses in synchronous rectification and DC-DC conversion.
The BSC0902NSIATMA1 features Infineon's OptiMOS 30V technology platform, which combines trench-gate cell design with optimized die layout to achieve industry-leading figure-of-merit (FOM = RDS(on) x QG). The device's low QOSS improves light-load efficiency in resonant and soft-switched topologies, while the 30V VDS rating provides ample margin for 12V bus rails with transient tolerance up to automotive load-dump conditions. The PG-TDSON-8-6 package exposes the drain pad to a thermal pad with low thermal resistance, enabling high current handling on standard FR-4 PCB copper area.
Typical applications include synchronous buck converters in server and datacom VRMs, telecom point-of-load (POL) regulators, high-current DC-DC modules, and OR-ing / hot-swap switches in 12V distributed power systems. The 30V rating also supports motor driver half-bridges and battery protection circuits in low-voltage lithium packs.
When designing with this MOSFET, optimize the gate-drive loop to minimize parasitic inductance - keep gate drive traces short and place a 10-100 Ohm gate resistor close to the device to control ringing. Use Kelvin-source connection when available to separate gate-drive return from high-current source path.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes for the BSC0902NSIATMA1 beyond what is found in the manufacturer datasheet alone.
کے لیے ڈراپ اِن متبادل BSC0902NSIATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں BSC0902NSIATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, Operating Junction Temperature.
BSC0901NSIATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC0902NSI
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
BSC094N06LS5ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPD060N03LGATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSP88H6327XTSA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC0902NSIATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 30V |
| Channel Type | N-Channel |
| Drain-Source Voltage (VDS) Max | 30 V |
| Continuous Drain Current (ID) at TA=25C | 23 A |
| Continuous Drain Current (ID) at TC=25C | 100 A |
| On-State Resistance RDS(on) Max at VGS=10V | 2.8 mOhm |
| Gate Charge QG(0V..10V) | 24 nC |
| Output Charge QOSS | 17 nC |
| Power Dissipation (TA) | 2.5 W |
| Power Dissipation (TC) | 48 W |
| آپریٹنگ درجہ حرارت رینج | -55C to +150C (junction) |
| پیکیج | PG-TDSON-8-6 (TDSON-8) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Built-in Diode | Yes (single with built-in diode) |
| RoHS اسٹیٹس | Compliant |
| Lead-Free | Yes |
| ہیلوجن فری | Yes |
BSC0902NSIATMA1 پن کنفیگریشن
| پن 1 | G — Gate |
| پن 2 | S — Source (main, high current) |
| پن 3 | S — Kelvin source (for gate-drive return) |
| پن 4 | NC — Not connected (per datasheet) |
| پن 5 | D — Drain tab (pin, also exposed pad) |
| پن 6 | D — Drain tab (pin) |
| پن 7 | D — Drain tab (pin) |
| پن 8 | D — Drain tab (pin) |
محفوظ آپریٹنگ ایریا
عام استعمالات
BSC0902NSIATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: Server and Datacom VRM, Telecom Point-of-Load (POL) Regulator, Hot-Swap and OR-ing Switch, Motor Drive Half-Bridge, Battery Protection and BMS, DC-DC Module and POL Brick.
Server and Datacom VRM
The BSC0902NSIATMA1 is designed for synchronous buck stages in server and datacom voltage regulator modules (VRMs) converting 12V bus to 1V-3.3V core rails. Its 2.8 mOhm RDS(on) at VGS=10V minimizes conduction loss at high output current, while the 24 nC total gate charge enables switching frequencies above 500 kHz to shrink magnetics. The 100A TC-rated continuous current supports multi-phase VRM topologies where each phase handles 30-40A. The 30V VDS provides ample margin for 12V rails with load-step transients. Compared to older trench MOSFETs, the OptiMOS 30V process improves light-load efficiency through reduced QOSS of 17 nC.
تجویز کردہ
Telecom Point-of-Load (POL) Regulator
POL regulators in telecom base-station and router systems benefit from the BSC0902NSIATMA1's combination of low RDS(on) and small PG-TDSON-8-6 footprint. The 30V VDS rating suits 12V and 18V intermediate bus architectures common in AdvancedTCA and ATX-style power systems. With 23A continuous drain current at TA=25C, the device can deliver full POL output without paralleling in sub-100W modules. Designers should use 4-layer PCBs with 2 oz copper on the drain tab to achieve full 100A TC rating in production layouts. The low QOSS improves hold-up time during input voltage sags.
تجویز کردہ
Hot-Swap and OR-ing Switch
The BSC0902NSIATMA1 is well suited for 12V hot-swap and OR-ing applications in redundant power distribution. Its 30V VDS rating handles 12V nominal with full transient margin, while the 2.8 mOhm RDS(on) keeps OR-ing conduction loss under 1W at 20A per FET. The fast switching capability supports active current-sharing loops with sub-microsecond response. The PG-TDSON-8-6 package's exposed drain pad enables direct PCB heatsinking through the OR-ing land pattern, eliminating external heatsinks in dense backplane designs. The built-in body diode provides natural freewheeling during plug-in events.
تجویز کردہ
Motor Drive Half-Bridge
Low-voltage brushless DC (BLDC) motor drives in 12V-24V battery-powered systems use the BSC0902NSIATMA1 as the low-side and high-side switch in half-bridge configurations. Its 100A pulsed current rating handles motor stall and start-up surges, while the 24 nC QG keeps gate-drive losses manageable at 25-50 kHz PWM frequencies. The body diode supports synchronous rectification during PWM deadtime without external freewheeling diodes. For 3-phase BLDC drives, three half-bridges can be built with six BSC0902NSIATMA1 devices, providing 600W drive capability at 24V. PCB layout must minimize high-side-low-side gate-drive crosstalk.
تجویز کردہ
Battery Protection and BMS
Lithium-ion battery management systems (BMS) use the BSC0902NSIATMA1 as a low-side protection FET in 4S-8S battery packs operating at 12V-30V. The 2.8 mOhm RDS(on) keeps voltage drop under 50 mV at 20A discharge, preserving battery capacity and reducing thermal stress. The 30V VDS rating accommodates fully-charged 8S Li-ion packs (33.6V max) - designers should select a 40V part for margin. The fast body diode enables bidirectional current sensing for coulomb counting. The compact PG-TDSON-8-6 footprint allows protection circuits to fit in cell-level BMS modules.
تجویز کردہ
DC-DC Module and POL Brick
Isolated and non-isolated DC-DC modules (brick converters) in the 12V-to-1V to 12V-to-12V range benefit from the BSC0902NSIATMA1's combination of high current capability and small footprint. As the synchronous rectifier FET on the secondary side of a 12V-input bus converter, it reduces secondary-side conduction loss compared to Schottky diodes, increasing module efficiency by 2-4 percent. The 100A TC rating supports 200-300W output bricks in a single FET position. The low QOSS improves no-load input current compliance with energy-star and 80 PLUS requirements.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا BSC0902NSIATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | BSC0901NSIATMA1 | BSC0902NSI | BSC094N06LS5ATMA1 | IPD060N03LGATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-6 | PG-TDSON-8-6 - same | PG-TDSON-8-6 - same | PG-TDSON-8-6 - same | PG-TDSON-8-6 - same |
| Drain-Source Voltage (VDS) Max | 30 V | 30 V | 30 V | 60 V | 30 V |
| RDS(on) Max at VGS=10V | 2.8 mOhm | 4.5 mOhm | 2.8 mOhm | 9.4 mOhm | 6.0 mOhm |
اہم امتیازی خصوصیات
- Industry-leading FOM at 30V (بمقابلہBSC0901NSIATMA1)
- Wide voltage margin in 30V class (بمقابلہBSC094N06LS5ATMA1)
- Logic-level drive option (بمقابلہIPD060N03LGATMA1)
ڈیزائن نوٹس
Estimated: at VDS=12V, ID=20A, and RDS(on)=2.8 mOhm, conduction loss is approximately P = I^2 x RDS(on) = 20^2 x 0.0028 = 1.12W. Switching losses depend on frequency but at 500 kHz with QG=24 nC and 12V gate drive, gate loss is ~0.14W. Total dissipation ~1.3W, well below the 2.5W TA rating. For full 100A TC operation, mount the drain tab on minimum 1 square inch of 2 oz copper with thermal vias to internal ground planes. Use junction-to-ambient thermal resistance curves in the datasheet to validate your PCB layout before committing to production.
Keep the gate-drive loop area minimal - route the gate trace directly from the driver output to pin 1, with the gate-return path on pin 3 (Kelvin source) directly back to the driver ground. Do NOT use pin 2 as the gate-return because it carries the full 100A load current and will inject switching transients into the gate-drive waveform. Place a 10-100 Ohm gate resistor within 5mm of the gate pin to dampen parasitic ringing from the gate inductance.
Do not exceed the VGS maximum rating (typically +/-20V for OptiMOS 30V family) - gate overstress destroys the thin gate oxide permanently. Use a gate-drive voltage of 10V for full RDS(on) specification; lower voltages such as 4.5V (logic-level) will increase RDS(on) by 50-100%. For bidirectional current sensing in BMS applications, account for the body diode forward drop (~0.7V) in your current-shunt amplifier design - the built-in diode is not a Schottky and has significant reverse-recovery charge.
تعمیل کی معلومات
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - this is an industrial/commercial grade part; automotive applications should select the equivalent AEC-Q100 variant if available.
