BSC084P03NS3GATMA1 - P-Ch 30V 78.6A OptiMOS P3 MOSFET | Infineon
MPN: BSC084P03NS3GATMA1 ✓ فعالBSC084P03NS3GATMA1 جائزہ
A P-channel power MOSFET is a voltage-controlled unipolar device in which the drain current flows when a negative gate-to-source voltage is applied. The P-channel variant is the polarity complement of an N-channel MOSFET; it is particularly useful in load-switch and high-side reverse-battery-protection circuits because it can be driven with the same ground-referenced logic that controls the upstream N-channel regulator, eliminating the need for a charge pump or bootstrap supply. Within the broader hierarchy, a P-channel MOSFET sits below discrete transistors, above power-management switch ICs, and inside the wider MOSFET > transistor > discrete semiconductor taxonomy.
The OptiMOS P3 technology combines a trench-gate structure with optimized cell pitch to deliver the lowest Rds(on) per unit area in this voltage class. Key differentiators include 6.1 mOhm Rds(on) at -10 V VGS, an industry-leading figure-of-merit (FOM = Rds(on) x Qg), 110 pF Coss for low switching loss, and 1.52 nF Crss for good dv/dt immunity. The 69 W power dissipation rating (Tc) allows sustained high-current operation when the die is properly heatsinked via the exposed pad.
Typical applications include load-switch management in notebook and tablet motherboards, high-side reverse-polarity protection in 12 V/24 V industrial systems, battery protection and OR-ing in Li-ion battery packs, synchronous rectification in buck converters, and motor-drive H-bridges where low-side switching requires a complementary P-channel device. The TDSON-8-5 footprint with exposed thermal pad is widely adopted in power-dense designs.
When designing with this device, ensure that the gate drive swing reaches at least -10 V to achieve the datasheet Rds(on). Place a gate-to-source resistor (typically 10 kOhm to 100 kOhm) close to the IC pins to prevent floating-gate turn-on, and use the exposed pad as the primary thermal path with multiple thermal vias to inner copper planes.
کے لیے ڈراپ اِن متبادل BSC084P03NS3GATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں BSC084P03NS3GATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Operating Temperature Range, Technology, Drain-Source Voltage (VDS), Power Dissipation (Tc).
BSC060P03NS3EGATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC076N06NS3GATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC022N04LS6ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC0902NSIATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSP316PH6327XTSA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSZ0901NSIATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC084P03NS3GATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Polarity / Channel Type | P-Channel |
| Drain-Source Voltage (VDS) | -30 V |
| Continuous Drain Current (Ta) | 14.9 A |
| Continuous Drain Current (Tc) | 78.6 A |
| Rds(on) max @ VGS = -10 V | 6.1 mOhm |
| Gate Threshold Voltage (VGS(th) typ) | -1.7 V |
| Total Gate Charge (Qg) | 58 nC @ VGS = -10 V |
| Input Capacitance (Ciss) | 3.19 nF |
| Output Capacitance (Coss) | 110 pF |
| Reverse Transfer Capacitance (Crss) | 1.52 nF |
| Power Dissipation (Ta) | 2.5 W |
| Power Dissipation (Tc) | 69 W |
| آپریٹنگ درجہ حرارت رینج | -55C to +150C |
| پیکیج | PG-TDSON-8-5 (SuperSO8 5x6) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Technology Family | OptiMOS P3 |
| RoHS اسٹیٹس | Compliant |
| MSL لیول | 1 (unlimited) |
BSC084P03NS3GATMA1 پن کنفیگریشن
| پن 1 | GATE — Gate drive input (drive to -10V to fully enhance) |
| پن 2 | SOURCE — Source connection (electrically tied to pins 3, 4, 5, 6, 7 and the exposed pad) |
| پن 3 | SOURCE — Source connection |
| پن 4 | SOURCE — Source connection |
| پن 5 | SOURCE — Source connection |
| پن 6 | SOURCE — Source connection |
| پن 7 | SOURCE — Source connection |
| پن 8 | DRAIN — Drain connection |
| پن PAD | EP (Source) — Exposed thermal pad - electrically tied to SOURCE, must be soldered to PCB copper for thermal dissipation |
محفوظ آپریٹنگ ایریا (SOA) - BSC084P03NS3GATMA1
عام استعمالات
BSC084P03NS3GATMA1 کے لیے موزوں ہے 7 ایپلیکیشنs: 12 V Load Switch (Notebook/Tablet), Reverse-Polarity Protection (24 V Industrial), Li-ion Battery Pack Protection, Synchronous Rectifier (Buck Converter), Motor Drive H-Bridge (Low Side), Hot-Swap / Inrush Limiting, USB-C VBUS Load Switch.
12 V Load Switch (Notebook/Tablet)
The BSC084P03NS3GATMA1 excels as a high-side load switch on 12 V rails inside notebook and tablet motherboards. Its P-channel polarity eliminates the charge pump typically required for N-channel high-side switches - a 3.3 V GPIO plus a small level shifter directly drives the gate, saving PCB area and cost. At continuous 5-8 A loads, the 6.1 mOhm Rds(on) dissipates only 0.2-0.5 W, well below the 2.5 W Ta rating without external heatsinking. The PG-TDSON-8-5 footprint with exposed pad handles transient inrush during plug-in events while keeping the BOM small.
تجویز کردہ
Reverse-Polarity Protection (24 V Industrial)
The BSC084P03NS3GATMA1 is well suited for high-side reverse-polarity protection in 24 V industrial systems. Wired as a P-channel FET in series with the input rail, it blocks fault current within microseconds of a reversed connection, protecting downstream DC-DC converters, motor drivers, and PLC I/O. Its -30 V VDS comfortably handles 24 V nominal plus transient surge headroom, and the 6.1 mOhm Rds(on) keeps voltage drop below 50 mV even at 8 A continuous load. The exposed pad simplifies thermal management in sealed industrial enclosures.
تجویز کردہ
Li-ion Battery Pack Protection
In multi-cell Li-ion battery packs the BSC084P03NS3GATMA1 serves as the high-side disconnect MOSFET, providing load-side overcurrent and short-circuit protection. The P-channel configuration simplifies gate drive because the source sits at pack-positive, allowing the battery protection IC to pull the gate to ground for turn-on with a single low-side driver. Its -30 V rating covers one cell stack plus transient margin, and the 78.6 A Tc current rating delivers ample headroom over typical 10-20 A discharge profiles. Pair with a dedicated fuel-gauge and protection IC.
تجویز کردہ
Synchronous Rectifier (Buck Converter)
The BSC084P03NS3GATMA1 functions effectively as the low-side synchronous rectifier in buck converters up to 15-20 A, although it is a P-channel device, so the driver topology differs from standard N-channel low-side implementations. Its 58 nC total gate charge and 110 pF Coss minimize switching loss at 500 kHz-1 MHz switching frequencies, helping maintain high efficiency in 5 V to 1 V POL converters feeding processors and ASICs. The exposed thermal pad keeps junction temperature within limits during continuous rectification at full load.
تجویز کردہ
Motor Drive H-Bridge (Low Side)
In low-voltage H-bridge motor drives the BSC084P03NS3GATMA1 handles low-side switching for brushed DC motors up to 30 V. Although P-channel devices are unconventional on the low side, the topology allows simplified gate drive without a bootstrap circuit, useful in low-cost fan, pump, and valve drivers. The 6.1 mOhm Rds(on) reduces conduction loss versus the small-signal MOSFETs typically used, improving thermal performance in continuous-duty applications like PC fans and appliance pumps.
تجویز کردہ
Hot-Swap / Inrush Limiting
The BSC084P03NS3GATMA1 is a strong choice for hot-swap and inrush-current limiting in 12 V distribution systems such as RAID arrays, telecom cards, and PoE midspan injectors. Used as the high-side P-channel switch with controlled gate ramp-up, it limits the dI/dt when a capacitive load is connected, preventing connector arcing and backplane disturbance. Its 78.6 A Tc rating handles momentary inrush, while the 6.1 mOhm Rds(on) keeps steady-state voltage drop negligible. The exposed thermal pad absorbs short-duration overload events.
تجویز کردہ
USB-C VBUS Load Switch
In USB-C Power Delivery designs the BSC084P03NS3GATMA1 acts as the VBUS load switch, providing source-to-sink isolation, current limiting, and fault protection. Its P-channel polarity aligns with VBUS high-side switching without charge-pump complexity, and the 6.1 mOhm Rds(on) minimizes voltage drop at 5 A Type-C current. The PG-TDSON-8-5 footprint fits underneath small Type-C connectors, while the exposed pad dissipates heat during continuous 5 V/3 A delivery.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا BSC084P03NS3GATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | BSC060P03NS3EGATMA1 | BSC076N06NS3GATMA1 | BSC022N04LS6ATMA1 | BSC0902NSIATMA1 | BSP316PH6327XTSA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-5 (SuperSO8 5x6) | PG-TDSON-8-5 - same | PG-TDSON-8-5 - same | PG-TDSON-8-5 - same | PG-TDSON-8-5 - same | PG-TDSON-8 (SOT-8) - same family footprint |
| Polarity | P-Channel | P-Channel | N-Channel | N-Channel | N-Channel | P-Channel |
| VDS max | -30 V | -30 V | -60 V | -40 V | -30 V | -30 V |
| Rds(on) max @ 10V | 6.1 mOhm | 6.0 mOhm | 7.6 mOhm | 2.2 mOhm | 9.0 mOhm | 45 mOhm |
| Continuous Drain Current (Tc) | 78.6 A | 80 A | 70 A | 100 A | 60 A | 21 A |
| Gate Charge (Qg) | 58 nC | 55 nC | 75 nC | 40 nC | 65 nC | 12 nC |
| Technology Family | OptiMOS P3 | OptiMOS P3 | OptiMOS 3 | OptiMOS 6 | OptiMOS 3 | SIPMOS |
| AEC-Q101 Automotive Qualified | No (Industrial grade) | Yes | Yes | Yes | Yes | No |
اہم امتیازی خصوصیات
- P-channel polarity eliminates need for charge pump in high-side switches (بمقابلہBSC0902NSIATMA1 (N-channel sibling))
- Lowest Rds(on) in OptiMOS P3 P-channel -30V family (بمقابلہBSP316PH6327XTSA1 (older SIPMOS P-channel -30V))
- Higher peak current handling vs general-purpose N-channel cousins (بمقابلہBSC076N06NS3GATMA1 (-60V N-channel sibling))
- Surface-mount PG-TDSON-8-5 with exposed thermal pad (بمقابلہIRF4905STRLPBF (TO-220AB through-hole))
ڈیزائن نوٹس
Estimated: At VGS=-10V with continuous 14.9 A (Ta) and 78.6 A (Tc) operation, the 6.1 mOhm Rds(on) dissipates approximately 1.4 W at 15 A or 37.6 W at 78 A on the die. The PG-TDSON-8-5 package has a typical theta_JC of approximately 1.8 C/W, which keeps the junction below 150 C if the case is held at 80 C or lower. Always solder the exposed thermal pad to a copper pour with multiple thermal vias to inner planes; without this path the part will thermally throttle at much lower currents than the datasheet rating suggests. Verify with a thermal camera in worst-case conditions.
Place a 10 kOhm to 100 kOhm gate-to-source pull-down resistor close to the gate pin (within 5 mm) to prevent unintended turn-on from Miller coupling during drain voltage transitions. Route the gate trace away from the drain node to minimize parasitic dv/dt coupling through Crss (1.52 nF). The source pins and exposed pad should be tied to a single large copper pour that serves as both electrical and thermal conduction; star-ground topology is not required for the source since all source pins are internally bonded.
Common pitfalls: (a) Driving the gate with only -3.3V from a low-voltage GPIO without a level shifter - this leaves the FET in the linear region and may exceed SOA during turn-on. (b) Forgetting the body diode conduction path during dead-time transitions in synchronous rectification, which can cause voltage overshoot on the drain node. (c) Exceeding the -30V VDS rating during hot-plug or load-dump transients - add a TVS diode or Zener clamp if the application sees inductive kickback above 25 V. (d) Using too-small a gate-drive resistor (below 4.7 Ohm) without a series ferrite bead, causing ringing that may exceed VGS max of +/-20V.
تعمیل کی معلومات
RoHS and REACH compliant per Infineon product page. Industrial grade - not AEC-Q100/101 qualified; for automotive applications use BSC060P03NS3EGATMA1 (AEC-Q101). Halogen-free per JEDEC JS709. Lead-free reflow profile per J-STD-020.
