BSC0902NSIATMA1 - 30V N-Ch OptiMOS MOSFET, PG-TDSON-8 | Infineon
MPN: BSC0902NSIATMA1 ✓ Hoạt độngBSC0902NSIATMA1 Tóm tắt
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently convert and regulate electrical energy. N-channel MOSFETs in the OptiMOS 30V family belong to the broader category of power MOSFETs -> discrete semiconductors -> power management components, optimized for low RDS(on), low gate charge, and high switching frequency to minimize conduction and switching losses in synchronous rectification and DC-DC conversion.
The BSC0902NSIATMA1 features Infineon's OptiMOS 30V technology platform, which combines trench-gate cell design with optimized die layout to achieve industry-leading figure-of-merit (FOM = RDS(on) x QG). The device's low QOSS improves light-load efficiency in resonant and soft-switched topologies, while the 30V VDS rating provides ample margin for 12V bus rails with transient tolerance up to automotive load-dump conditions. The PG-TDSON-8-6 package exposes the drain pad to a thermal pad with low thermal resistance, enabling high current handling on standard FR-4 PCB copper area.
Typical applications include synchronous buck converters in server and datacom VRMs, telecom point-of-load (POL) regulators, high-current DC-DC modules, and OR-ing / hot-swap switches in 12V distributed power systems. The 30V rating also supports motor driver half-bridges and battery protection circuits in low-voltage lithium packs.
When designing with this MOSFET, optimize the gate-drive loop to minimize parasitic inductance - keep gate drive traces short and place a 10-100 Ohm gate resistor close to the device to control ringing. Use Kelvin-source connection when available to separate gate-drive return from high-current source path.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes for the BSC0902NSIATMA1 beyond what is found in the manufacturer datasheet alone.
Bộ thay thế dễ dàng lắp đặt cho BSC0902NSIATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với BSC0902NSIATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, Operating Junction Temperature.
BSC0901NSIATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC0902NSI
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSC094N06LS5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPD060N03LGATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSP88H6327XTSA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC0902NSIATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 30V |
| Channel Type | N-Channel |
| Drain-Source Voltage (VDS) Max | 30 V |
| Continuous Drain Current (ID) at TA=25C | 23 A |
| Continuous Drain Current (ID) at TC=25C | 100 A |
| On-State Resistance RDS(on) Max at VGS=10V | 2.8 mOhm |
| Gate Charge QG(0V..10V) | 24 nC |
| Output Charge QOSS | 17 nC |
| Power Dissipation (TA) | 2.5 W |
| Power Dissipation (TC) | 48 W |
| Khoảng nhiệt độ hoạt động | -55C to +150C (junction) |
| Hộp | PG-TDSON-8-6 (TDSON-8) |
| Kiểu lắp đặt | Surface Mount |
| Built-in Diode | Yes (single with built-in diode) |
| Trạng thái RoHS | Compliant |
| Lead-Free | Yes |
| Đông trùng haogen | Yes |
Cấu hình chân BSC0902NSIATMA1
| Chân 1 | G — Gate |
| Chân 2 | S — Source (main, high current) |
| Chân 3 | S — Kelvin source (for gate-drive return) |
| Chân 4 | NC — Not connected (per datasheet) |
| Chân 5 | D — Drain tab (pin, also exposed pad) |
| Chân 6 | D — Drain tab (pin) |
| Chân 7 | D — Drain tab (pin) |
| Chân 8 | D — Drain tab (pin) |
Khu vực hoạt động an toàn
Ứng dụng tiêu biểu
BSC0902NSIATMA1 phù hợp cho 6 Áp dụngs: Server and Datacom VRM, Telecom Point-of-Load (POL) Regulator, Hot-Swap and OR-ing Switch, Motor Drive Half-Bridge, Battery Protection and BMS, DC-DC Module and POL Brick.
Server and Datacom VRM
The BSC0902NSIATMA1 is designed for synchronous buck stages in server and datacom voltage regulator modules (VRMs) converting 12V bus to 1V-3.3V core rails. Its 2.8 mOhm RDS(on) at VGS=10V minimizes conduction loss at high output current, while the 24 nC total gate charge enables switching frequencies above 500 kHz to shrink magnetics. The 100A TC-rated continuous current supports multi-phase VRM topologies where each phase handles 30-40A. The 30V VDS provides ample margin for 12V rails with load-step transients. Compared to older trench MOSFETs, the OptiMOS 30V process improves light-load efficiency through reduced QOSS of 17 nC.
Được đề xuất
Telecom Point-of-Load (POL) Regulator
POL regulators in telecom base-station and router systems benefit from the BSC0902NSIATMA1's combination of low RDS(on) and small PG-TDSON-8-6 footprint. The 30V VDS rating suits 12V and 18V intermediate bus architectures common in AdvancedTCA and ATX-style power systems. With 23A continuous drain current at TA=25C, the device can deliver full POL output without paralleling in sub-100W modules. Designers should use 4-layer PCBs with 2 oz copper on the drain tab to achieve full 100A TC rating in production layouts. The low QOSS improves hold-up time during input voltage sags.
Được đề xuất
Hot-Swap and OR-ing Switch
The BSC0902NSIATMA1 is well suited for 12V hot-swap and OR-ing applications in redundant power distribution. Its 30V VDS rating handles 12V nominal with full transient margin, while the 2.8 mOhm RDS(on) keeps OR-ing conduction loss under 1W at 20A per FET. The fast switching capability supports active current-sharing loops with sub-microsecond response. The PG-TDSON-8-6 package's exposed drain pad enables direct PCB heatsinking through the OR-ing land pattern, eliminating external heatsinks in dense backplane designs. The built-in body diode provides natural freewheeling during plug-in events.
Được đề xuất
Motor Drive Half-Bridge
Low-voltage brushless DC (BLDC) motor drives in 12V-24V battery-powered systems use the BSC0902NSIATMA1 as the low-side and high-side switch in half-bridge configurations. Its 100A pulsed current rating handles motor stall and start-up surges, while the 24 nC QG keeps gate-drive losses manageable at 25-50 kHz PWM frequencies. The body diode supports synchronous rectification during PWM deadtime without external freewheeling diodes. For 3-phase BLDC drives, three half-bridges can be built with six BSC0902NSIATMA1 devices, providing 600W drive capability at 24V. PCB layout must minimize high-side-low-side gate-drive crosstalk.
Được đề xuất
Battery Protection and BMS
Lithium-ion battery management systems (BMS) use the BSC0902NSIATMA1 as a low-side protection FET in 4S-8S battery packs operating at 12V-30V. The 2.8 mOhm RDS(on) keeps voltage drop under 50 mV at 20A discharge, preserving battery capacity and reducing thermal stress. The 30V VDS rating accommodates fully-charged 8S Li-ion packs (33.6V max) - designers should select a 40V part for margin. The fast body diode enables bidirectional current sensing for coulomb counting. The compact PG-TDSON-8-6 footprint allows protection circuits to fit in cell-level BMS modules.
Được đề xuất
DC-DC Module and POL Brick
Isolated and non-isolated DC-DC modules (brick converters) in the 12V-to-1V to 12V-to-12V range benefit from the BSC0902NSIATMA1's combination of high current capability and small footprint. As the synchronous rectifier FET on the secondary side of a 12V-input bus converter, it reduces secondary-side conduction loss compared to Schottky diodes, increasing module efficiency by 2-4 percent. The 100A TC rating supports 200-300W output bricks in a single FET position. The low QOSS improves no-load input current compliance with energy-star and 80 PLUS requirements.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho BSC0902NSIATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | BSC0901NSIATMA1 | BSC0902NSI | BSC094N06LS5ATMA1 | IPD060N03LGATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-6 | PG-TDSON-8-6 - same | PG-TDSON-8-6 - same | PG-TDSON-8-6 - same | PG-TDSON-8-6 - same |
| Drain-Source Voltage (VDS) Max | 30 V | 30 V | 30 V | 60 V | 30 V |
| RDS(on) Max at VGS=10V | 2.8 mOhm | 4.5 mOhm | 2.8 mOhm | 9.4 mOhm | 6.0 mOhm |
Bảo phân biệt quan trọng
- Industry-leading FOM at 30V (vsBSC0901NSIATMA1)
- Wide voltage margin in 30V class (vsBSC094N06LS5ATMA1)
- Logic-level drive option (vsIPD060N03LGATMA1)
Ghi chú thiết kế
Estimated: at VDS=12V, ID=20A, and RDS(on)=2.8 mOhm, conduction loss is approximately P = I^2 x RDS(on) = 20^2 x 0.0028 = 1.12W. Switching losses depend on frequency but at 500 kHz with QG=24 nC and 12V gate drive, gate loss is ~0.14W. Total dissipation ~1.3W, well below the 2.5W TA rating. For full 100A TC operation, mount the drain tab on minimum 1 square inch of 2 oz copper with thermal vias to internal ground planes. Use junction-to-ambient thermal resistance curves in the datasheet to validate your PCB layout before committing to production.
Keep the gate-drive loop area minimal - route the gate trace directly from the driver output to pin 1, with the gate-return path on pin 3 (Kelvin source) directly back to the driver ground. Do NOT use pin 2 as the gate-return because it carries the full 100A load current and will inject switching transients into the gate-drive waveform. Place a 10-100 Ohm gate resistor within 5mm of the gate pin to dampen parasitic ringing from the gate inductance.
Do not exceed the VGS maximum rating (typically +/-20V for OptiMOS 30V family) - gate overstress destroys the thin gate oxide permanently. Use a gate-drive voltage of 10V for full RDS(on) specification; lower voltages such as 4.5V (logic-level) will increase RDS(on) by 50-100%. For bidirectional current sensing in BMS applications, account for the body diode forward drop (~0.7V) in your current-shunt amplifier design - the built-in diode is not a Schottky and has significant reverse-recovery charge.
Thông tin tuân thủ
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - this is an industrial/commercial grade part; automotive applications should select the equivalent AEC-Q100 variant if available.
