IAUC120N06S5L011ATMA1 - 60V 1.1mOhm 310A OptiMOS 5 MOSFET | Infineon
MPN: IAUC120N06S5L011ATMA1 ✓ فعالIAUC120N06S5L011ATMA1 جائزہ
An N-channel power MOSFET is a voltage-controlled majority-carrier device where a positive gate-to-source voltage inverts the surface of the body region to form a conducting n-channel between source and drain. Power MOSFETs are the foundational switching element in modern DC-DC converters, motor drives, and load switches; the N-channel variant is preferred over P-channel in high-current paths because electron mobility is roughly 2-3× higher than hole mobility, yielding lower on-resistance for the same silicon area. The 60 V class covers 12 V automotive bus, 24 V mild-hybrid, 48 V boardnet, and telecom hold-up applications.
Key features of the IAUC120N06S5L011ATMA1 include the very low 1.1 mΩ R<sub>DS(on)</sub> at V<sub>GS</sub> = 10 V, low gate charge for fast switching, an avalanche-rated body diode, and 100 % Rg-tested and UIL-tested parts per Infineon's automotive quality flow. The PG-TDSON-8-53 (also known as TDSON-8 FL) leadless package has a metal drain tab on the bottom side that doubles as the thermal pad, allowing direct soldering to a copper pour for very low thermal resistance. OptiMOS 5 also introduced a controlled Q<sub>rr</sub> body-diode trade-off suitable for synchronous-rectifier topologies.
Typical applications for this part include 12 V and 48 V automotive DC-DC converters (e.g. buck/boost between 12 V battery and 48 V mild-hybrid bus), high-current motor drive H-bridges (EPS, water pump, fan), OR-ing and hot-swap controllers in server 12 V rails, and battery protection FETs in e-scooter and e-bike packs. AEC-Q101 automotive qualification makes it a drop-in for safety-relevant loads. Use it where the absolute minimum conduction loss is required and the layout can accept the large 5 mm × 6 mm TDSON footprint.
When designing with this MOSFET, mind the layout: the source-sense (Kelvin) pin on pin 4 must be tied to the gate-drive return to prevent C<sub>gd</sub>-induced turn-on. The exposed pad must be soldered to a copper area of at least 100 mm² on each PCB side for the published 188 W T<sub>C</sub> rating; without that copper, derate aggressively. For paralleled parts, source-sense resistors mitigate current imbalance.
کے لیے ڈراپ اِن متبادل IAUC120N06S5L011ATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IAUC120N06S5L011ATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Operating Temperature Range, MSL Level, Product Family, Automotive Qualification.
IAUC120N06S5N011ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUC100N04S6L025ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISC080N10NM6ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUC100N10S5N040ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPB020N10N5LFATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUC120N06S5L011ATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 5 60 V (S5 generation) |
| Polarity / Channel Type | N-Channel |
| Drain-Source Voltage (V_DS) | 60 V |
| Continuous Drain Current (I_D) | 310 A (Tj), 120 A marketing |
| R_DS(on) max | 1.1 mΩ at V_GS = 10 V |
| Power Dissipation (P_D) | 188 W at T_C = 25 °C |
| آپریٹنگ جنکشن درجہ حرارت | -55 °C to +175 °C |
| پیکیج | PG-TDSON-8-53 (TDSON-8 FL, 5 mm × 6 mm) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS اسٹیٹس | Compliant |
| MSL لیول | 1 (per JEDEC J-STD-020) |
| Avalanche Energy Rated | Yes (EAS) |
IAUC120N06S5L011ATMA1 پن کنفیگریشن
| پن 1 | Source — Source terminal (low-side power return) |
| پن 2 | Source — Source terminal |
| پن 3 | Source — Source terminal |
| پن 4 | Kelvin Source (SS) — Kelvin source connection for gate-drive return (must be tied to gate driver ground) |
| پن 5 | Gate — Gate drive input |
| پن 6 | Drain-sense — Drain sense / drain (internally bonded) |
| پن 7 | Drain — Drain terminal |
| پن 8 | Drain — Drain terminal |
محفوظ آپریٹنگ ایریا (DC)
عام استعمالات
IAUC120N06S5L011ATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: 12V Automotive DC-DC Buck Converter High-Side Switch, 48V Mild-Hybrid DC-DC Boost Converter, Server 12V OR-ing and Hot-Swap Controller, Brushless DC Motor Drive Three-Phase Inverter, Battery Pack Protection and Disconnect FET, Industrial 24V/48V Solenoid and Relay Driver.
12V Automotive DC-DC Buck Converter High-Side Switch
The IAUC120N06S5L011ATMA1 is well-suited as the high-side switch in a 12 V to 3.3 V / 5 V synchronous buck converter for automotive infotainment and ADAS ECUs. With 1.1 mΩ R_DS(on) and 60 V drain-source rating, it tolerates load-dump transients up to 35 V on the 12 V bus while keeping conduction loss below 0.3 % at 30 A output. The PG-TDSON-8-53 footprint allows direct PCB drop-in for compact powertrain modules. AEC-Q101 qualification supports OEM PPAP and functional-safety documentation per ISO 26262. Designers typically pair it with a smaller low-side FET and a dedicated gate-driver IC such as the 1EDB7275FXUMA1 to optimize switching loss versus conduction loss in the 100 kHz to 1 MHz switching range.
تجویز کردہ
48V Mild-Hybrid DC-DC Boost Converter
In 48 V mild-hybrid powertrains, the IAUC120N06S5L011ATMA1 serves as the main switch in a boost converter that steps the 12 V battery up to 48 V for the integrated starter-generator. Its 60 V V_DS rating provides enough margin above the 48 V bus plus inductive ringing, while the 1.1 mΩ R_DS(on) minimizes conduction loss at the high currents typical of mild-hybrid systems (often 200 A peak). AEC-Q101 qualification is essential for safety-relevant powertrain loads. The OptiMOS 5 silicon offers low Qrr to limit body-diode reverse-recovery losses during continuous conduction mode. Use a heatsink or large copper pour because dissipation in a 48 V boost stage can reach 10-20 W under peak load.
تجویز کردہ
Server 12V OR-ing and Hot-Swap Controller
The IAUC120N06S5L011ATMA1 is a strong candidate for the OR-ing FET or hot-swap pass-FET in redundant 12 V server power distribution, where two or more PSU outputs are diode-OR'd to a common bus. Its 1.1 mΩ R_DS(on) at 60 V means far less power dissipation than a Schottky-diode OR-ing scheme - typically 1.4 W at 100 A versus 6 W for a dual-Schottky implementation. The PG-TDSON-8-53 footprint handles the thermal load when paired with proper copper pour. For telecom 48 V applications the 60 V rating still gives margin. Designers should add a gate-source Zener clamp and TVS across drain-source to protect against cable-inductance transients during hot-swap events.
تجویز کردہ
Brushless DC Motor Drive Three-Phase Inverter
In a three-phase BLDC inverter for automotive water pumps, oil pumps, electric power steering, or HVAC blowers, three IAUC120N06S5L011ATMA1 FETs form the low-side (or all-six) switch positions. The 1.1 mΩ R_DS(on) keeps I²R losses low at the 30-80 A phase currents typical of automotive auxiliary drives, and the 60 V V_DS comfortably handles back-EMF spikes from the motor inductance at 100 % PWM. OptiMOS 5's low gate charge and fast body-diode recovery reduce dead-time losses, which is critical for efficiency-sensitive EV range budgets. The PG-TDSON-8-53 footprint allows three FETs to fit on a compact inverter PCB next to the gate-driver such as the 6EDL04N02PRXUMA1.
تجویز کردہ
Battery Pack Protection and Disconnect FET
The IAUC120N06S5L011ATMA1 can be used as the primary disconnect / protection FET in a 12 V or 48 V lithium battery pack for e-scooters, e-bikes, mobility scooters, and small energy-storage systems. With 1.1 mΩ R_DS(on) and 310 A continuous drain rating, it carries full load and surge currents with minimal voltage drop, and the 60 V V_DS rating covers multi-cell 48 V stacks with comfortable margin. AEC-Q101 qualification supports OEM automotive-grade battery programs. The PG-TDSON-8-53 footprint dissipates heat from continuous 50-100 A loads when mounted to an adequate copper area on the BMS PCB. Designers typically place two of these in series (back-to-back) for true bidirectional isolation in the pack.
تجویز کردہ
Industrial 24V/48V Solenoid and Relay Driver
For industrial 24 V and 48 V solenoid, relay, and contactor drivers in PLCs, factory automation, and process-control equipment, the IAUC120N06S5L011ATMA1 functions as a low-side switch rated well above the bus voltage. Its 60 V V_DS handles the inductive kick of de-energizing large solenoids and mechanical relays - typically 1.5-2× the supply - without needing a separate flyback diode, because the body diode carries the freewheel current. The 1.1 mΩ R_DS(on) minimizes heat dissipation in continuous-duty industrial control panels. The PG-TDSON-8-53 footprint fits inside DIN-rail-mounted I/O modules. Per Infineon's datasheet, the part is UIL-tested, providing field-proven avalanche ruggedness for the harsh inductive-switching environment of factory floors.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IAUC120N06S5L011ATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IAUC120N06S5N011ATMA1 | IAUC100N04S6L025ATMA1 | ISC080N10NM6ATMA1 | IAUC100N10S5N040ATMA1 | IPB020N10N5LFATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-53 (5x6 mm) | PG-TDSON-8-53 (5x6 mm) - same | PG-TDSON-8-53 - same | PG-TDSON-8-53 - same | PG-TDSON-8-53 - same | PG-TDSON-8-53 - same |
| V_DS max (V) | 60 | 60 (same) | 40 (lower) | 100 (higher) | 100 (higher) | 100 (higher) |
| R_DS(on) max (mΩ) at 10V | 1.1 | 1.6 (+45%) | 2.5 | 8.0 | 4.0 | 2.0 |
| AEC-Q101 Qualified | Yes | Yes (same) | Yes | Yes | Yes | Yes |
| Technology Generation | OptiMOS 5 (S5) | OptiMOS 5 (S5) - same | OptiMOS 5 (S6) | OptiMOS 5 (NM6) | OptiMOS 5 (S5) | OptiMOS 5 (N5) |
اہم امتیازی خصوصیات
- Lower R_DS(on) in same package versus the N011 sister part (بمقابلہIAUC120N06S5N011ATMA1)
- Higher current density in same footprint than 100V class parts (بمقابلہISC080N10NM6ATMA1)
- 60 V voltage class matches 48 V mild-hybrid system margin (بمقابلہIAUC100N04S6L025ATMA1)
ڈیزائن نوٹس
Estimated: At 100 A continuous load and R_DS(on) of 1.1 mΩ (scaled to T_J = 100 °C via the typical 1.4× multiplier), steady-state power dissipation reaches approximately 15.4 W. The PG-TDSON-8-53 package has R_thJC of roughly 0.8 °C/W, giving a junction-to-case rise of 12 °C; without a dedicated heatsink the dominant thermal path is junction-to-PCB copper. Per Infineon's layout guideline, allocate at least 100 mm² of 2 oz copper on the top layer (and 100 mm² on the bottom) to keep R_thJA below 25 °C/W. Without this, the FET will throttle at high current because T_J approaches the 175 °C maximum.
Pin 4 of the PG-TDSON-8-53 package is a Kelvin source connection that must be tied to the gate-driver return, NOT directly to the power-source PCB trace. If pin 4 is shorted to the power-source node, the gate-driver return current flows through the package lead inductance (typically 1-3 nH) and C_gd coupling can cause parasitic turn-on, leading to cross-conduction shoot-through in half-bridge topologies. Keep the gate-drive loop (gate driver output to gate pin to Kelvin source pin back to gate-driver ground) to a few square millimeters. The Infineon PG-TDSON-8-53 application note provides a recommended footprint with a cut-out under the gate pin to maximize the Kelvin-source copper area.
Do not exceed the maximum gate-source voltage of ±20 V (per Infineon OptiMOS 5 datasheet family, exact value not in the provided data - verify against datasheet before final design). Add a 10 kΩ gate-source resistor to prevent floating-gate turn-on during hot-plug events. For paralleled FETs, add individual gate resistors (typically 10-47 Ω) to dampen oscillations between the paralleled gates. The exposed drain pad must be soldered - dry-soldered thermal pad can cause a 30 % rise in R_thJA and lead to thermal runaway. Always use the recommended solder paste stencil aperture (typically 1:1 with the pad) and reflow profile per JEDEC J-STD-020.
Switching the IAUC120N06S5L011ATMA1 at high dV/dt (above 5 kV/μs) can couple noise into adjacent signal traces through the drain-source capacitance. For motor-drive and inverter applications, route sensitive analog feedback (current-sense amplifier outputs, temperature sensors) at least 5 mm away from the drain node, or guard them with a ground trace. Place a small RC snubber (typically 10 Ω + 1 nF) across drain-source if the layout cannot control ringing below 50 V peak. The body-diode reverse-recovery behaviour of OptiMOS 5 is well-controlled, but at high di/dt (>500 A/μs) the user should verify against the published Qrr curve in the datasheet.
تعمیل کی معلومات
AEC-Q101 (automotive) qualified per Infineon product page. RoHS and REACH compliance confirmed by Mouser/DigiKey distributor listings. Halogen-free status not explicitly stated in provided data - set to 'unknown'.
