IAUCN08S7N034ATMA1 - 80V 120A 3.4mΩ Automotive MOSFET | Infineon
MPN: IAUCN08S7N034ATMA1 ✓ فعالIAUCN08S7N034ATMA1 جائزہ
An N-channel power MOSFET is a voltage-controlled semiconductor switch in which majority-carrier electron conduction (rather than minority-carrier transport) enables very fast switching and very low on-state resistance. MOSFETs belong to the discrete semiconductor family, sit within the broader power management hierarchy, and are the workhorse of switched-mode power supplies, synchronous rectifiers, and hot-swap circuits. The OptiMOS™ 7 process is Infineon's seventh-generation trench technology, which shrinks cell pitch to lower R<sub>DS(on)</sub> per unit area while reducing gate charge and improving switching loss.
Key electrical characteristics include a drain-source breakdown voltage V<sub>(BR)DSS</sub> of 80 V, a continuous I<sub>D</sub> rating of 120 A at 25 °C case (much lower at 175 °C T<sub>J</sub>), a pulsed avalanche current rating, and typical gate charge Q<sub>G</sub> of 45.8 nC at V<sub>GS</sub>=10 V. The 3.4 mΩ R<sub>DS(on)</sub> produces 0.41 W conduction loss per ampere of drain current, while the 23 pF C<sub>iss</sub> and 3.115 nF C<sub>oss</sub> keep switching energy moderate for a 100 V class device.
The PG-TDSON-8-34 (5 mm × 6 mm) package uses an exposed metal drain tab that doubles as the thermal pad, giving an R<sub>thJA</sub> suitable for 118 W power dissipation on a properly designed 1 oz copper FR-4 PCB. The package is lead-free, RoHS compliant, and rated MSL 1, simplifying automotive board assembly.
Typical applications include 48 V mild-hybrid DC-DC converters, 12 V automotive buck/boost converters, electric power steering (EPS) half-bridges, HVAC blower and pump drivers, and battery disconnect switches in e-mobility. The AEC-Q101 grade-1 (-55 °C to +175 °C T<sub>J</sub>) qualification also makes it suitable for industrial high-current switching and telecom hot-swap controllers.
When designing with this device, place the gate-drive loop as compact as possible (gate resistor, gate-source pull-down, and IC within 5 mm of the gate pad) to suppress ringing on the 80 V-rated gate oxide. Verify that V<sub>GS(th)</sub> stays above 3.2 V minimum across temperature to prevent parasitic turn-on in half-bridge configurations, and size the PCB copper flood under the exposed pad to keep junction temperature below 150 °C at worst-case steady-state load.
This page synthesizes distributor pricing, verified automotive-grade drop-in alternatives, and PCB-level design notes not found in the manufacturer datasheet - useful for automotive power engineers evaluating 80 V MOSFET platforms.
کے لیے ڈراپ اِن متبادل IAUCN08S7N034ATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IAUCN08S7N034ATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Operating Temperature Range, Technology, Series, Drain-Source Voltage (VDS).
IAUC50N08S5L096ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUC60N06S5L073ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUC100N08S5N043ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUCN04S7N006ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUCN04S7L006ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISC016N08NM8ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUCN08S7N034ATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ 7 |
| ٹرانزسٹر کی قسم | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | 120 A |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | 3.4 mΩ |
| Gate-Source Threshold (V<sub>GS(th)</sub>) | 3.2 V (typ) |
| Total Gate Charge (Q<sub>G</sub>) | 45.8 nC @ V<sub>GS</sub>=10 V |
| Input Capacitance (C<sub>iss</sub>) | 1.27 nF |
| Output Capacitance (C<sub>oss</sub>) | 3.115 nF |
| Reverse Transfer Capacitance (C<sub>rss</sub>) | 23 pF |
| Power Dissipation (P<sub>D</sub>) | 118 W |
| آپریٹنگ جنکشن درجہ حرارت | -55°C to +175°C |
| پیکیج | PG-TDSON-8-34 (TDSON EP) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| MSL لیول | MSL 1 (unlimited floor life) |
| Automotive Qualification | AEC-Q101 |
| RoHS اسٹیٹس | Compliant |
IAUCN08S7N034ATMA1 پن کنفیگریشن
| پن 1 | Source — Source connection (low-side) |
| پن 2 | Source — Source connection (low-side) |
| پن 3 | Source — Source connection (low-side) |
| پن 4 | Gate — Gate drive input |
| پن 5 | Source — Source connection (low-side) |
| پن 6 | Source — Source connection (low-side) |
| پن 7 | Source — Source connection (low-side) |
| پن 8 | Source — Source connection (low-side) |
| پن EP | Drain (Exposed Pad) — Drain and thermal pad - must be soldered to PCB copper |
محفوظ آپریٹنگ ایریا (DC, T_C=25°C)
عام استعمالات
IAUCN08S7N034ATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: 48V Mild-Hybrid DC-DC Converter, 12V/24V Automotive Buck-Boost Converter, Electric Power Steering (EPS) Half-Bridge, HVAC Blower and Pump Motor Driver, Battery Disconnect and Hot-Swap Switch, Industrial High-Current Switching and Telecom Hot-Swap.
48V Mild-Hybrid DC-DC Converter
The IAUCN08S7N034ATMA1 fits 48V mild-hybrid DC-DC converter high-side and low-side switches because its 80V V<sub>DS</sub> provides 30% avalanche margin above 48V bus transients and its 3.4 mΩ R<sub>DS(on)</sub> at 10V V<sub>GS</sub> keeps synchronous-rectifier conduction loss under 2W at 25A. The 45.8 nC Q<sub>G</sub> and 23 pF C<sub>rss</sub> permit 100-200 kHz switching with manageable driver loss. AEC-Q101 grade-1 -55°C to +175°C qualification matches 48V eM powertrain thermal environments where the part sees constant under-hood ambient stress. Pair it with a UCC27211A or 1EDI20N12AFXUMA1 gate driver for a clean 48V-to-12V buck stage reaching 96%+ peak efficiency.
تجویز کردہ
12V/24V Automotive Buck-Boost Converter
In 12V-to-24V or 24V-to-12V bidirectional converters, the IAUCN08S7N034ATMA1 serves as both high-side and low-side switch thanks to its 80V V<sub>DS</sub> rating covering 24V bus plus load-dump transients up to 35V. The 3.4 mΩ R<sub>DS(on)</sub> at full 120A delivers 14W conduction loss - manageable on a 4-layer 2oz-copper PCB where R<sub>thJA</sub> falls into the high-30s °C/W. OptiMOS™ 7's reduced Q<sub>GD</sub>/Q<sub>GS</sub> ratio also minimizes body-diode-induced shoot-through in hard-commutated buck stages. The exposed drain tab doubles as a thermal pad, allowing direct copper-flood cooling under the hood of conventional and mild-hybrid vehicles.
تجویز کردہ
Electric Power Steering (EPS) Half-Bridge
The IAUCN08S7N034ATMA1 is well-suited for EPS brushless-DC half-bridge stages where peak phase currents reach 80-100 A during parking maneuvers. The 120 A continuous I<sub>D</sub> rating provides adequate margin against locked-rotor inrush, while the 80V V<sub>DS</sub> comfortably handles inductive flyback from the steering-motor stator. AEC-Q101 grade-1 qualification and 175°C T<sub>J(max)</sub> allow mounting near the steering column where ambient temperatures reach 125°C. Low R<sub>DS(on)</sub> also reduces I²R loss during continuous highway assist, helping meet ISO 26262 ASIL-D power-conversion efficiency targets.
تجویز کردہ
HVAC Blower and Pump Motor Driver
Inside HVAC blower and water-pump inverter modules, the IAUCN08S7N034ATMA1 acts as the low-side switch in a 3-phase bridge driving 12V or 48V BLDC motors up to 1 kW. The 3.4 mΩ R<sub>DS(on)</sub> yields 0.5-1.5W conduction loss per switch at typical 15-20A RMS phase currents, enabling compact PCB designs without forced airflow. Its AEC-Q101 grade and -55°C cold-start capability address underhood and chassis-mounted HVAC modules operating across arctic and desert climates. OptiMOS™ 7's low Q<sub>rr</sub> further reduces switching loss during PWM commutation at 20-25 kHz.
تجویز کردہ
Battery Disconnect and Hot-Swap Switch
For 12V/24V/48V battery disconnect units and hot-swap controllers, the IAUCN08S7N034ATMA1's 80V V<sub>DS</sub> rating provides headroom over the highest expected bus voltage, while its 3.4 mΩ R<sub>DS(on)</sub> keeps steady-state I²R loss low enough to operate continuously at 80-100 A without active cooling. AEC-Q101 grade-1 qualification and a 175°C maximum junction temperature suit underhood or battery-pack-adjacent placement. The 45.8 nC total gate charge allows fast (sub-100 µs) turn-on, limiting inrush into downstream bulk capacitors. A TVS-protected gate network is recommended to clamp V<sub>GS</sub> below 20V during load-dump events.
تجویز کردہ
Industrial High-Current Switching and Telecom Hot-Swap
Outside automotive, the IAUCN08S7N034ATMA1 is used in industrial 48V-60V bus converters and telecom -48V hot-swap front ends. The 80V V<sub>DS</sub> comfortably tolerates -48V plus transient excursions up to -75V, and the 120A I<sub>D</sub> rating supports 2-3 kW shelf-power designs. Low Q<sub>rr</sub> reduces body-diode reverse-recovery stress in hard-switched buck stages driving PoE and 5G small-cell power modules. Although targeted at automotive, AEC-Q101 qualification exceeds industrial reliability expectations, providing extra margin in 24/7 always-on telecom and server applications.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IAUCN08S7N034ATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IAUC50N08S5L096ATMA1 | IAUC60N06S5L073ATMA1 | IAUC100N08S5N043ATMA1 | IAUCN04S7N006ATMA1 | ISC016N08NM8ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-34 (TDSON EP) | PG-TDSON-8 (same) | PG-TDSON-8 (same) | PG-TDSON-8 (same) | PG-TDSON-8 (same) | PG-TDSON-8 (same) |
| V_DS (V) | 80 V | 80 V | 60 V | 80 V | 40 V | 80 V |
| R_DS(on) max @ 10V (mΩ) | 3.4 mΩ | 9.6 mΩ | 7.3 mΩ | 4.3 mΩ | 0.6 mΩ | 1.6 mΩ |
| Generation | OptiMOS 7 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 7 | OptiMOS 7 |
| Automotive Qualified | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) |
اہم امتیازی خصوصیات
- Lower R_DS(on) than OptiMOS 5 predecessor at same V_DS (بمقابلہIAUC100N08S5N043ATMA1)
- Higher V_DS headroom than 60 V OptiMOS parts in same footprint (بمقابلہIAUC60N06S5L073ATMA1)
- Lower conduction loss than higher-V_DS alternatives (بمقابلہIAUC50N08S5L096ATMA1)
ڈیزائن نوٹس
Estimated: at 80 A continuous drain current, the IAUCN08S7N034ATMA1 dissipates roughly I² × R = 80² × 0.0034 = 21.8 W. With θJA around 40 °C/W on a 4-layer 2 oz copper PCB, junction temperature rise is ~870 °C above 25 °C ambient - therefore continuous operation should be limited to ~50 A on standard 1 oz copper or a 4-layer 2 oz board with airflow is mandatory above 80 A. The exposed drain pad MUST be soldered to a copper flood of at least 200 mm² to meet R<sub>thJA</sub> specifications.
Keep the high-di/dt gate-drive loop (gate resistor → gate pin → kelvin source → driver GND) smaller than 5 mm total path length to prevent shoot-through and gate-oscillation on this 80 V-rated oxide. Source pins 1-3 and 5-8 must all be soldered to the same low-impedance copper plane; any missing source pin forces current through the bond wires and raises R<sub>DS(on)</sub> by 30-50%. Place a 10 Ω gate resistor and 10 kΩ gate-source pull-down resistor within 3 mm of the gate pad.
Do not operate the IAUCN08S7N034ATMA1 with V<sub>GS</sub> above ±20 V - the 80 V V<sub>DS</sub> rating does NOT extend to V<sub>GS</sub>. Use a 12-15 V gate-drive supply with a Zener or TVS clamp for protection against load-dump-induced V<sub>GS</sub> overshoot. In half-bridge configurations, the body-diode reverse-recovery (Q<sub>rr</sub>) can cause shoot-through; add 200-500 ns of dead-time in the controller and consider an anti-parallel SiC diode for hard-switched legs above 50 kHz.
تعمیل کی معلومات
AEC-Q101 (automotive equivalent of AEC-Q100 for discrete semiconductors) qualified. RoHS and REACH compliant per Arrow and JLCPCB distributor listings. Lead-free and halogen-free per Infineon product family standard.
