IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
MPN: IAUC100N04S6N028ATMA1 ✓ فعالIAUC100N04S6N028ATMA1 جائزہ
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch in which the gate field modulates a conduction channel between source and drain. Within the discrete-semiconductor hierarchy, the MOSFET sits above the transistor and below the integrated circuit; N-channel enhancement-mode MOSFETs such as this part are the workhorses of low-voltage power conversion because their low R<sub>DS(on)</sub> minimizes conduction loss. The OptiMOS 6 platform extends this trend with a 40 V cell pitch engineered for synchronous buck converters, OR-ing switches, and hot-swap controllers in 12 V automotive systems.
Key specifications include a maximum drain-source voltage V<sub>DS</sub> of 40 V, continuous drain current I<sub>D</sub> of 100 A at T<sub>C</sub> = 25 °C, pulsed drain current I<sub>DM</sub> of 400 A, gate threshold V<sub>GS(th)</sub> in the 1.5 V to 2.5 V range, and total gate charge Q<sub>g</sub> tuned for fast switching at hundreds of kHz. The PG-TDSON-8 (TDSON-8) package exposes a metal-drain thermal pad that keeps junction-to-case thermal resistance R<sub>thJC</sub> below 2 C/W, enabling 62 W continuous dissipation on a properly cooled PCB.
Typical applications are 12 V automotive ECU power rails, battery management system (BMS) protection FETs, electric power steering (EPS) motor inverters, and high-current DC-DC converters. The combination of automotive-grade qualification and PG-TDSON-8 footprint also makes it attractive as a drop-in successor to legacy 40 V DPAK/TO-252 MOSFETs in industrial DC-DC bricks where PCB rework is impractical.
When designing with this part, prioritize low-inductance Kelvin-source sensing where the package allows it, keep the gate-drive loop area below 1 cm², and verify SOA against your worst-case avalanche energy. Use an automotive-grade gate driver rated for V<sub>GS</sub> of ±20 V and add a 10 kΩ gate-source resistor for Miller-current damping.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, plus a comparison against same-family Infineon parts and cross-brand equivalents to support sourcing and second-source decisions.
کے لیے ڈراپ اِن متبادل IAUC100N04S6N028ATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IAUC100N04S6N028ATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Operating Temperature Range, Technology, Automotive Qualification, Series.
IAUC100N04S6N015ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC014N04LSATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC018N04LSGATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUC60N06S5L073ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUC50N08S5L096ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUC100N04S6N028ATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 6 40V |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain-Source Voltage (V_DS) | 40 V |
| Continuous Drain Current (I_D) at T_C=25°C | 100 A |
| Pulsed Drain Current (I_DM) | 400 A |
| R_DS(on) max @ V_GS=10V | 2.8 mΩ (typical) |
| Gate Threshold Voltage (V_GS(th)) | 1.5 V to 2.5 V |
| Power Dissipation (P_D) at T_C=25°C | 62 W |
| آپریٹنگ درجہ حرارت رینج | -55 °C to +175 °C |
| پیکیج | PG-TDSON-8 (TDSON-8) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Automotive Qualified | Yes |
| RoHS اسٹیٹس | Compliant |
IAUC100N04S6N028ATMA1 پن کنفیگریشن
| پن 1 | Source — Source connection (pin 1 of TDSON-8) |
| پن 2 | Source — Source connection |
| پن 3 | Source — Source connection |
| پن 4 | Gate — Gate drive input |
| پن 5 | Source — Source connection |
| پن 6 | Source — Source connection |
| پن 7 | Source — Source connection |
| پن 8 | Source — Source connection / thermal pad internally connected to drain |
محفوظ آپریٹنگ ایریا (estimated from datasheet SOA curves)
عام استعمالات
IAUC100N04S6N028ATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: 12V Automotive ECU Power Rail Switching, Battery Management System (BMS) Protection FET, Synchronous Rectification in 12V DC-DC Buck Converters, Hot-Swap / Inrush Current Limiting, Electric Power Steering (EPS) Motor Drive, Industrial 24V Bus Switching and OR-ing.
12V Automotive ECU Power Rail Switching
The IAUC100N04S6N028ATMA1's 40 V V_DS rating provides comfortable margin above 12 V nominal with load-dump transients up to 35 V, while 100 A continuous drain current supports high-current rail switching in engine ECUs. Its 2.8 mΩ typical R_DS(on) keeps conduction loss under 2.8 W at typical 30 A ECU load, and the automotive qualification ensures compliance with AEC-Q101 stress tests. Place it on a 1 oz copper pour of at least 100 mm² to maintain junction temperature below 150 °C at full load.
تجویز کردہ
Battery Management System (BMS) Protection FET
In 12 V lithium-ion BMS designs, the IAUC100N04S6N028ATMA1 serves as the low-side or high-side disconnect FET with its 100 A continuous rating providing substantial margin above typical 50 A discharge currents. The 2.8 mΩ R_DS(on) limits full-load dissipation to about 3.5 W at 35 A, allowing surface-mount PCB cooling without heatsinking. Automotive qualification matches BMS reliability requirements, and the PG-TDSON-8 footprint enables compact dual-FET back-to-back layouts for charge/discharge path isolation.
تجویز کردہ
Synchronous Rectification in 12V DC-DC Buck Converters
As the low-side synchronous rectifier in 12 V-to-3.3 V buck converters, the IAUC100N04S6N028ATMA1's low R_DS(on) of 2.8 mΩ reduces rectifier conduction loss versus a Schottky diode, improving overall efficiency by 3-5% at 20 A loads. Its 40 V V_DS comfortably handles 12 V input with spike margin, and its fast switching characteristic supports switching frequencies above 500 kHz. Use a gate driver like the IRS2302STRPBF to ensure fast transition times and minimize dead-time losses.
تجویز کردہ
Hot-Swap / Inrush Current Limiting
The IAUC100N04S6N028ATMA1 serves as the hot-swap control FET in 12 V automotive distribution modules where its 100 A continuous current supports full-load insertion. The 2.8 mΩ R_DS(on) maintains low voltage drop during steady-state operation, while the PG-TDSON-8 package provides the thermal headroom needed for sustained 100 A conduction. Add a gate-source resistor (10 kΩ) and gate-drive slew-rate control to manage inrush when hot-plugging capacitive loads.
تجویز کردہ
Electric Power Steering (EPS) Motor Drive
In EPS motor inverter stages, the IAUC100N04S6N028ATMA1's 100 A continuous drain current and 400 A pulsed rating handle the peak torque demands of column-assist and rack-assist EPS systems. The 2.8 mΩ R_DS(on) minimizes inverter losses during high-torque assist, while the automotive qualification matches the stringent reliability requirements for safety-critical steering functions. Pair with a three-phase gate driver such as the 6ED003L02F2XUMA1 for a complete inverter solution.
تجویز کردہ
Industrial 24V Bus Switching and OR-ing
Although the part is rated 40 V, the IAUC100N04S6N028ATMA1 is used in 24 V industrial bus systems where its 40 V V_DS provides adequate margin for transients. Its 100 A capability supports high-current OR-ing between redundant power supplies, and its 2.8 mΩ R_DS(on) limits drop to 140 mV at 50 A — well within most OR-ing controller thresholds. The surface-mount PG-TDSON-8 package simplifies automated assembly versus through-hole alternatives.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IAUC100N04S6N028ATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IAUC100N04S6N015ATMA1 | BSC014N04LSATMA1 | BSC018N04LSGATMA1 | IAUC60N06S5L073ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8 | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same |
| Drain-Source Voltage (V_DS) | 40 V | 40 V | 40 V | 40 V | 60 V (+50%) |
| R_DS(on) typical | 2.8 mΩ | 1.5 mΩ (-46%) | 1.4 mΩ (-50%) | 1.8 mΩ (-36%) | 7.3 mΩ (+161%) |
| Automotive Qualified | Yes | Yes | Yes | Yes | Yes |
| Operating Temperature | -55 °C to +175 °C | -55 °C to +175 °C | -55 °C to +175 °C | -55 °C to +175 °C | -55 °C to +175 °C |
اہم امتیازی خصوصیات
- Cost-optimized 40V/100A in OptiMOS 6 family (بمقابلہIAUC100N04S6N015ATMA1)
- Lower R_DS(on) than legacy 40V MOSFETs (بمقابلہBSC097N06NSATMA1)
- Higher drain current capability than 60V-class parts (بمقابلہIAUC60N06S5L073ATMA1)
- Automotive-grade qualification with broad sourcing (بمقابلہGeneric industrial MOSFETs)
ڈیزائن نوٹس
At continuous 100 A and 2.8 mΩ R_DS(on), conduction loss reaches 28 W, requiring a copper pour of at least 200 mm² on a 2 oz copper layer to maintain junction temperature below 150 °C. The PG-TDSON-8 package provides R_thJC of approximately 2 °C/W, so thermal design must focus on the PCB copper-to-ambient path. Use thermal vias (0.3 mm diameter, 1 mm pitch) under the exposed pad for multi-layer heat extraction.
Keep the gate-drive loop area below 1 cm² to minimize parasitic inductance and prevent false turn-on from V_DS-induced Miller coupling. Place the gate-drive resistor (typically 10 Ω) as close to the gate pin as possible, and add a 10 kΩ gate-source pull-down resistor to ensure the FET stays off during MCU reset. Kelvin-source connection (pin 4 in PG-TDSON-8) should be used for high-frequency switching above 100 kHz to separate gate-drive return from power-source current path.
The PG-TDSON-8 package requires an exposed pad footprint with proper thermal via array. Recommended via pattern: 9 vias in a 3×3 grid, 0.3 mm diameter, 1.0 mm pitch, connected to internal ground/power planes. The exposed pad is internally connected to the drain terminal — ensure the PCB copper does not short to adjacent source traces. Solder paste stencil aperture should be 1:1 with the thermal pad plus additional openings for the source pins.
Avoid exceeding the maximum V_GS rating of ±20 V — even brief transients above this can degrade gate oxide. Add a 12 V Zener clamp on the gate-to-source path if the gate driver has any overshoot. Never operate the FET in linear mode (high V_DS with partial gate enhancement) for sustained periods, as the SOA curves show rapid power derating above 10 V V_DS. Verify avalanche energy (E_AS) for any unclamped inductive switching events.
To minimize ringing and EMI, add an RC snubber (typically 10 Ω + 1 nF) across the drain-source of the FET in switching applications. Use a ferrite bead in series with the gate-drive path to dampen high-frequency gate oscillations. For switching frequencies above 200 kHz, consider gate-drive slew-rate control via a gate resistor of 22-47 Ω to balance switching loss against EMI generation.
تعمیل کی معلومات
AEC-Q101 automotive qualified per Infineon product page. RoHS compliant. Halogen-free status not explicitly stated in verified data — set to 'unknown'.
