IAUCN04S7N024HATMA1 - 40V Dual N-Ch OptiMOS-7 2.46mΩ | Infineon
MPN: IAUCN04S7N024HATMA1 ✓ فعالIAUCN04S7N024HATMA1 جائزہ
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the workhorse of modern power electronics - a voltage-controlled switch used to convert, switch, and regulate electrical energy with high efficiency. Within the broader taxonomy, this dual-channel device belongs to the discrete semiconductor family, specifically power MOSFETs designed for high-current switching. The "dual" configuration integrates two independent N-channel MOSFETs in a single package, halving board space compared to two discrete parts while simplifying synchronous-rectifier and half-bridge layouts.
Key differentiators include a 40 V drain-source breakdown voltage suitable for 12 V automotive load-dump environments, a low typical R_DS(on) of 2.46 mΩ at V_GS = 10 V that minimizes conduction loss, and AEC-Q101 automotive qualification that supports deployment in engine-control units, body electronics, and 48 V mild-hybrid systems. The OptiMOS-7 platform reduces gate charge (Qg) and figure-of-merit (FOM = R_DS(on) × Qg) versus the prior OptiMOS-5 generation, enabling higher switching frequencies and lower driver losses in switched-mode power supplies.
The architecture uses a trench-gate cell design optimized for low FOM, with each die featuring an integrated source-connected sense option. The exposed top-side thermal pad of the PG-TDSON-8-56 package enables direct heat extraction to the PCB copper, supporting the 75 W Tc dissipation rating. The 5x6 mm footprint is industry-standard for Power-SO8 / SSO8 dual MOSFETs, allowing drop-in substitution from competing suppliers.
Typical applications include automotive LED lighting drivers, electric power steering (EPS), brake-system electronics, brushless DC (BLDC) motor drivers, and high-current DC-DC converter stages for ADAS domain controllers. The dual configuration also suits synchronous buck and half-bridge topologies where the low-side and high-side switches benefit from matched R_DS(on) and Qg.
When designing with this device, attention must be paid to gate-drive voltage (10 V recommended for full enhancement), PCB copper area for thermal management, and avalanche-energy handling for unclamped inductive switching events. Compared with single-MOSFET solutions, the dual package requires careful Kelvin-source layout to prevent common-source inductance from degrading switching performance.
This page synthesizes distributor pricing, AEC-Q101 same-family alternatives, and practical design notes not found in the manufacturer datasheet.
کے لیے ڈراپ اِن متبادل IAUCN04S7N024HATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IAUCN04S7N024HATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Mounting Type, Automotive Qualification, Technology, MSL Level.
IAUCN04S7N019GATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUCN04S7N027GATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUCN04S7N037GATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUCN04S7L042GATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUC60N04S6L030HATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUCN04S7N024HATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Series | OptiMOS-7 40 V |
| Configuration | Dual N-Channel (independent) |
| Drain-Source Voltage (V_DS) | 40 V |
| Continuous Drain Current (I_D, Tj) | 100 A |
| On-Resistance R_DS(on) typ | 2.46 mΩ at V_GS = 10 V |
| Maximum Power Dissipation (Tc) | 75 W |
| پیکیج | PG-TDSON-8-56 (SSO8 HB 5x6 mm) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Automotive Qualification | AEC-Q101 |
| Technology | OptiMOS-7 trench-gate |
| RoHS اسٹیٹس | Compliant |
| MSL لیول | 1 (per JEDEC J-STD-020) |
| Packing | Tape & Reel |
IAUCN04S7N024HATMA1 پن کنفیگریشن
| پن 1 | G1 — Gate of MOSFET 1 |
| پن 2 | S1 — Source of MOSFET 1 |
| پن 3 | D1 — Drain of MOSFET 1 |
| پن 4 | D1 — Drain of MOSFET 1 (parallel pin for current sharing) |
| پن 5 | D2 — Drain of MOSFET 2 |
| پن 6 | D2 — Drain of MOSFET 2 (parallel pin for current sharing) |
| پن 7 | S2 — Source of MOSFET 2 |
| پن 8 | G2 — Gate of MOSFET 2 |
| پن PAD | Thermal Pad — Exposed thermal pad, electrically connected to source of both MOSFETs (Kelvin-source) |
محفوظ آپریٹنگ ایریا (SOA) - IAUCN04S7N024HATMA1
عام استعمالات
IAUCN04S7N024HATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: Automotive LED Headlight Driver, Electric Power Steering (EPS) Motor Drive, Brake System Electronics (ABS/ESC), 48 V Mild-Hybrid DC-DC Converter, Brushless DC (BLDC) Motor Drive, ADAS Domain Controller Power Supply.
Automotive LED Headlight Driver
The IAUCN04S7N024HATMA1 is well-suited for high-current LED headlight driver stages. Its 2.46 mΩ typical R_DS(on) per channel minimizes conduction loss in the buck converter switching FET, while the 40 V V_DS rating comfortably handles 12 V automotive bus with load-dump transients. AEC-Q101 qualification enables deployment in front-light modules requiring -40°C to +150°C operation. The dual-channel configuration can drive two LED strings or implement synchronous rectification, reducing component count. Compared with a single-MOSFET solution, the SSO8 5x6 dual package saves PCB area in space-constrained headlamp assemblies.
تجویز کردہ
Electric Power Steering (EPS) Motor Drive
In EPS systems the IAUCN04S7N024HATMA1's dual N-channel configuration enables a compact three-phase bridge inverter topology. The 100 A continuous drain current supports peak torque demands during parking maneuvers, while the 2.46 mΩ R_DS(on) keeps I²R losses low to maintain steering-assist efficiency. OptiMOS-7 technology's low Qg reduces gate-driver losses at the typical 20 kHz PWM frequency, helping meet ASIL-D thermal budgets. AEC-Q101 qualification is mandatory for safety-critical steering. The exposed thermal pad supports 75 W dissipation with proper PCB copper, critical for under-hood environments.
تجویز کردہ
Brake System Electronics (ABS/ESC)
Anti-lock braking and electronic stability control systems use the IAUCN04S7N024HATMA1 for solenoid driver and pump-motor switching. The 40 V V_DS rating tolerates 12 V brake-system transients, while the low R_DS(on) of 2.46 mΩ minimizes heat generation in the normally-energized ABS pump. The dual-package format fits the dual-solenoid driver topology. AEC-Q101 and -40°C to +150°C operation are mandatory for chassis-domain safety. The OptiMOS-7 cell design provides robust avalanche capability for unclamped inductive switching of brake solenoids.
تجویز کردہ
48 V Mild-Hybrid DC-DC Converter
For mild-hybrid DC-DC converters stepping 48 V down to 12 V, the IAUCN04S7N024HATMA1 is used on the low-voltage 12 V synchronous-rectifier side. Its 2.46 mΩ R_DS(on) and 100 A rating handle continuous 1-2 kW converter power with high efficiency. Note: this part is rated 40 V, so it is restricted to the 12 V rail side, not the 48 V high-voltage side. AEC-Q101 qualification supports automotive deployment. The dual configuration reduces part count in interleaved or multiphase converter designs.
تجویز کردہ
Brushless DC (BLDC) Motor Drive
The IAUCN04S7N024HATMA1 dual N-channel MOSFET supports BLDC motor inverter half-bridge configurations in applications such as HVAC blowers, water pumps, and cooling fans. With 2.46 mΩ R_DS(on) per channel, switching losses are minimized at 20-50 kHz PWM frequencies typical of automotive BLDC drives. The 100 A continuous drain current handles locked-rotor inrush, while 75 W power dissipation on Tc provides thermal margin. AEC-Q101 and the rugged OptiMOS-7 trench design deliver the reliability needed under-hood. The dual package enables compact 3-phase bridges with three parts.
تجویز کردہ
ADAS Domain Controller Power Supply
ADAS ECUs and domain controllers require multi-rail power with high current capability. The IAUCN04S7N024HATMA1 supports synchronous buck stages delivering processor core voltages at 20-40 A, where its 2.46 mΩ R_DS(on) minimizes conduction loss and OptiMOS-7's low Qg enables high switching frequencies (>500 kHz) for small inductor sizing. The 40 V V_DS rating tolerates input transients on 12 V automotive rails. The dual package supports multiphase buck topologies (two phases per part), reducing BOM and PCB area. AEC-Q101 qualification is required for safety-critical ADAS systems.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IAUCN04S7N024HATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IAUCN04S7N019GATMA1 | IAUCN04S7N027GATMA1 | IAUCN04S7N037GATMA1 | IAUCN04S7L042GATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-56 (SSO8 HB 5x6) | PG-TDSON-8-56 (SSO8 HB 5x6) | PG-TDSON-8-56 (SSO8 HB 5x6) | PG-TDSON-8-56 (SSO8 HB 5x6) | PG-TDSON-8-56 (SSO8 HB 5x6) | PG-TDSON-8-56 (SSO8 HB 5x6) |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| V_DS max (V) | 40 | 40 | 40 | 40 | 40 | 60 |
| R_DS(on) typ (mΩ) @ 10 V | 2.46 | 1.9 | 2.7 | 3.7 | 4.2 | 3.0 |
| Continuous I_D (A) | 100 | 100 | 100 | 100 | 100 | 100 |
| Power Dissipation Tc (W) | 75 | 75 | 75 | 75 | 75 | 75 |
| Configuration | Dual N-Channel | Dual N-Channel | Dual N-Channel | Dual N-Channel | Dual N-Channel | Dual N-Channel |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Technology | OptiMOS-7 | OptiMOS-7 | OptiMOS-7 | OptiMOS-7 | OptiMOS-7 | OptiMOS-6 |
اہم امتیازی خصوصیات
- Lowest R_DS(on) in 40 V OptiMOS-7 family (بمقابلہIAUCN04S7L042GATMA1)
- Higher voltage margin vs higher-R_DS(on) 40 V parts (بمقابلہIAUC60N04S6L030HATMA1)
- OptiMOS-7 latest-generation performance (بمقابلہIAUC60N04S6L030HATMA1)
ڈیزائن نوٹس
Estimated thermal analysis: at full-load current of 100 A per channel and R_DS(on) of 2.46 mΩ, conduction loss is approximately P = I²R = (100)² × 0.00246 = 24.6 W per channel. The PG-TDSON-8-56 (SSO8 HB 5x6) package supports 75 W at Tc, so PCB copper area must provide a thermal resistance below approximately 3-4 C/W to keep junction temperature rise below 100°C at ambient. Use at least 2 oz copper and an exposed-pad land pattern per Infineon's SSO8 HB layout guide.
The exposed thermal pad of the PG-TDSON-8-56 package is internally connected to both MOSFET sources. For switching applications, use a Kelvin-source connection where the gate-driver return is tied to the source pin (pin 2 or pin 7) rather than the thermal pad, to prevent common-source inductance from degrading switching performance and causing gate-oscillation. Place input capacitors and gate-drive resistors within 5 mm of the gate and source pins.
Do not exceed V_GS of ±20 V absolute maximum (20 V max per datasheet). Use a gate-drive voltage of 10 V for full enhancement and lowest R_DS(on); gate voltages below 6 V may leave the MOSFET in the linear region with high dissipation. Add a 10 kΩ gate-source resistor to prevent unwanted turn-on from dv/dt coupling. Verify avalanche-energy rating (EAS) for unclamped inductive switching events such as relay or solenoid turn-off.
OptiMOS-7 technology enables fast switching transitions (rise/fall times <10 ns), which can cause EMI issues. Add a gate-source resistor (typically 10-100 Ω) to slow the switching edge and reduce high-frequency ringing. Snubber circuits across drain-source may be needed for motor-drive applications. Follow Infineon's application note on EMI reduction for OptiMOS-7 in automotive environments.
تعمیل کی معلومات
AEC-Q101 qualified (automotive MOSFET equivalent to AEC-Q100). RoHS and REACH compliant per Infineon product page. Halogen-free per JEDEC JS709B.
