IPD50N10S3L16ATMA1 - 100V N-Ch 50A OptiMOS MOSFET DPAK | Infineon
MPN: IPD50N10S3L16ATMA1 ✓ فعالIPD50N10S3L16ATMA1 جائزہ
What is a power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device whose channel conductance is modulated by the gate-source voltage. Within the broader hierarchy: MOSFET → transistor → discrete semiconductor → semiconductor. OptiMOS-T is Infineon's trench-technology power MOSFET family optimized for low R<sub>DS(on)</sub> per die area, low gate charge, and high avalanche ruggedness, making it the workhorse of automotive and industrial switched-mode power stages.
Key features of the IPD50N10S3L16ATMA1 include a maximum drain-source voltage V<sub>DS</sub>=100 V, continuous drain current I<sub>D</sub>=50 A at T<sub>C</sub>=25 °C, pulsed current capability up to 200 A, and gate threshold V<sub>GS(th)</sub>=2.5 V typical. The DPAK (PG-TO252-3-11) package provides low thermal resistance with a tab that doubles as the drain connection, enabling direct PCB copper heatsinking.
The device uses Infineon's third-generation OptiMOS-T3 trench process, which significantly reduces on-resistance per unit area and lowers gate charge Q<sub>G</sub> compared to planar MOSFETs of the same voltage class. This combination delivers high efficiency at high switching frequencies, reduced driver losses, and good EMI behavior in hard-switched topologies such as synchronous buck converters and half-bridges.
Typical applications include automotive 48 V mild-hybrid inverter stages, DC-DC converters, motor control H-bridges, battery protection circuits, and high-current load switching. The part is also commonly used in industrial switched-mode power supplies, solenoid drivers, and Class-D audio amplifiers where low R<sub>DS(on)</sub> minimizes conduction loss.
When designing with this MOSFET, place the gate-driver as close as possible to the gate pin to limit parasitic inductance, and use a Kelvin-source connection if available in the gate-driver layout. The DPAK tab is electrically the drain — isolation from the heatsink may be required depending on circuit topology.
This page synthesizes distributor stock, drop-in alternatives, parametric comparisons, and practical design notes beyond the manufacturer datasheet summary.
کے لیے ڈراپ اِن متبادل IPD50N10S3L16ATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IPD50N10S3L16ATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Operating Temperature Range, Package, Technology, Drain-Source Voltage (VDS), Mounting Type.
IPB50N10S3L16ATMA1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPI50N10S3L16ATMA1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
BSC076N04NDATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPC50N04S5L5R5ATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPD50N06S409ATMA2
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUC120N06S5L015ATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISC015N06NM5ATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPD50N10S3L16ATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Part Number | IPD50N10S3L16ATMA1 |
| Series | OptiMOS-T |
| ٹرانزسٹر کی قسم | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | 100 V |
| Continuous Drain Current (I_D, T_C=25C) | 50 A |
| Pulsed Drain Current (I_DM) | 200 A |
| R_DS(on) max @ V_GS=10V | 15 mΩ |
| Gate Threshold Voltage (V_GS(th)) | 2.5 V (typ) |
| Power Dissipation (P_D, T_C=25C) | 100 W |
| پیکیج | PG-TO252-3-11 (DPAK) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| آپریٹنگ درجہ حرارت رینج | -55C to +175C |
| Automotive Qualification | AEC-Q101 |
| RoHS اسٹیٹس | Compliant |
| Packaging | Tape & Reel |
IPD50N10S3L16ATMA1 پن کنفیگریشن
| پن 1 | Gate — Gate control input — V_GS drives channel conduction |
| پن 2 | Drain — Drain terminal, also connected to the metal tab; main load-current path |
| پن 3 | Source — Source terminal; return path for drain current |
| پن Tab | Drain (Tab) — Backside metal tab — electrically the drain, used for PCB heatsinking |
محفوظ آپریٹنگ ایریا (DC, T_C=25C)
عام استعمالات
IPD50N10S3L16ATMA1 کے لیے موزوں ہے 7 ایپلیکیشنs: Automotive 48V Mild-Hybrid Inverter, Industrial DC-DC Converter, Brushless DC Motor Drive H-Bridge, Battery Protection and Load Switch, Class-D Audio Amplifier Output Stage, Solenoid and Relay Driver, Power ORing and Hot-Swap Controller.
Automotive 48V Mild-Hybrid Inverter
The IPD50N10S3L16ATMA1 is the switching element in 48 V mild-hybrid inverter stages where its 100 V V_DS rating provides headroom above the 48 V nominal bus and absorbs load-dump transients. With 50 A continuous drain current and 15 mΩ R_DS(on), two devices form a half-bridge delivering peak motor currents in the 100-200 A range while keeping conduction loss below 50 W per device. The AEC-Q101 qualification and -55 to +175 C junction range make it a drop-in fit for automotive inverter modules that must survive under-hood thermal stress. Engineers typically pair it with Infineon EiceDriver gate-driver ICs such as 1ED3124MC12HXUMA1 to achieve reliable switching at high dV/dt.
تجویز کردہ
Industrial DC-DC Converter
In 48 V input to 12 V output synchronous buck converters, the IPD50N10S3L16ATMA1 serves as the high-side control FET. Its 15 mΩ R_DS(on) at V_GS=10 V keeps conduction loss low at the typical 10-20 A load of telecom and industrial 48 V bus converters. The OptiMOS-T3 trench technology provides low gate charge Q_G (approximately 50 nC typical) which enables switching frequencies in the 100-200 kHz range without driving losses overwhelming conduction savings. The DPAK outline's drain tab provides the heatsinking required at continuous output current. Pair the part with a low-voltage synchronous rectifier such as BSC076N04NDATMA1 for the low-side position.
تجویز کردہ
Brushless DC Motor Drive H-Bridge
Brushless DC motor drives in industrial automation and e-mobility applications use the IPD50N10S3L16ATMA1 as the switching element in three-phase H-bridges. With 100 V V_DS rating, the MOSFET handles motor back-EMF peaks above the nominal 24 V or 48 V rail. Four MOSFETs per bridge operating at 20 kHz PWM deliver up to 30 A continuous phase current while staying within the 100 W per-device power dissipation limit. The DPAK footprint allows direct PCB copper heatsinking and simplified thermal management in compact motor-drive modules.
تجویز کردہ
Battery Protection and Load Switch
High-current battery protection in 24-48 V lithium battery packs uses the IPD50N10S3L16ATMA1 as the load switch element. Its 100 V V_DS rating covers transient overvoltage events during battery disconnection while the 15 mΩ R_DS(on) at 50 A continuous current keeps conduction loss below 40 W at full load. The part's low R_DS(on) minimizes voltage drop across the protection switch which is critical for accurate state-of-charge measurement. AEC-Q101 qualification supports automotive traction battery and industrial energy storage system deployments.
تجویز کردہ
Class-D Audio Amplifier Output Stage
In Class-D audio amplifier output stages, the IPD50N10S3L16ATMA1 is used as the half-bridge switching element driving the LC low-pass filter to the speaker. Its low R_DS(on) of 15 mΩ minimizes conduction loss and thermal dissipation, which directly impacts amplifier efficiency and thermal design. The 100 V V_DS rating allows higher supply rails that increase amplifier dynamic range — useful in automotive and professional audio where 50-80 V rails are common. The fast switching capability of OptiMOS-T3 supports the 250-500 kHz switching frequencies typical in high-fidelity Class-D designs.
تجویز کردہ
Solenoid and Relay Driver
Industrial solenoid drivers and high-current relay replacements use the IPD50N10S3L16ATMA1 as a solid-state switch replacing mechanical relays. With 50 A continuous current capability and 100 V V_DS, the MOSFET handles inductive kickback transients via avalanche energy absorption while the body diode (or external freewheeling diode) handles reverse current during de-energization. The DPAK outline supports PCB-level integration into industrial control cabinets. Compared to mechanical relays, the MOSFET provides silent operation, longer lifetime (no contact wear), and faster switching.
تجویز کردہ
Power ORing and Hot-Swap Controller
Power ORing in redundant 48 V telecom and server supplies uses the IPD50N10S3L16ATMA1 as the ORing FET to prevent reverse-current flow when supplies are paralleled. With 100 V V_DS and 15 mΩ R_DS(on), two MOSFETs per rail minimize power dissipation at 30-50 A continuous currents. In hot-swap controllers, the MOSFET's gradual turn-on via gate-resistor-controlled dV/dt protects downstream capacitors from inrush surge. AEC-Q101 grade supports telecom and industrial server environments.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IPD50N10S3L16ATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IPB50N10S3L16ATMA1 | IPI50N10S3L16ATMA1 | IPD50N06S409ATMA2 |
|---|---|---|---|---|
| Package | PG-TO252-3-11 (DPAK) | PG-TO263-3 (D2PAK) | PG-TO262-3 (I2PAK) | PG-TO252-3-11 (DPAK) |
| Brand | Infineon | Infineon | Infineon | Infineon |
| V_DS max | 100 V | 100 V | 100 V | 60 V |
| Continuous I_D (T_C=25C) | 50 A | 50 A | 50 A | 50 A |
| R_DS(on) max @ V_GS=10V | 15 mΩ | 20 mΩ | 15 mΩ | 40 mΩ |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Series | OptiMOS-T | OptiMOS-T | OptiMOS-T | OptiMOS 2 |
| Mounting Style | Surface Mount (DPAK) | Surface Mount (D2PAK) | Through-Hole (I2PAK) | Surface Mount (DPAK) |
اہم امتیازی خصوصیات
- 100V rating in DPAK with 15 mΩ R_DS(on) (بمقابلہIPD50N06S409ATMA2 (60V/40 mΩ))
- AEC-Q101 qualified automotive grade (بمقابلہSTD40NF10 (STMicroelectronics, industrial grade only))
- OptiMOS-T3 trench technology with low Q_G (بمقابلہOlder planar 100V MOSFETs)
ڈیزائن نوٹس
Estimated: at V_DS=100 V worst-case avalanche events or 50 A continuous conduction with 100 mΩ effective loop, the IPD50N10S3L16ATMA1 dissipates up to 7-10 W per device. The DPAK package has θ_JA of approximately 50 C/W on a standard JEDEC 1 oz copper 1 sq-inch pad — derate to roughly 1.5 W per square inch of copper without external heatsink. For continuous high-current operation solder the drain tab to a 1-2 sq-inch copper pour; for full 50 A continuous operation an external clip-on heatsink or insulated metal substrate (IMS) is recommended. Verify thermal performance in your application with a thermocouple on the tab.
The IPD50N10S3L16ATMA1 is a 100 V/50 A switching device — gate-loop inductance must be minimized to prevent ringing and gate-oxide overstress. Per the manufacturer application notes, place the gate-driver within 25 mm of the gate pin with a gate resistor of 10-47 Ω to control dV/dt. Use a wide and short source-return path and consider a Kelvin-source connection (where the tab source and signal source are routed separately) for high-frequency switching above 100 kHz. The drain tab must be soldered to a continuous copper pour that serves as both electrical node and thermal heatsink; do not daisy-chain the drain through narrow traces.
Three common design pitfalls: (1) Exceeding V_GS=±20 V absolute maximum — use a gate-driver with 12 V gate drive and zener clamps if ringing is suspected. (2) Driving the gate with insufficient gate-drive voltage — at V_GS=4.5 V the R_DS(on) may be 2-3× higher than at 10 V, dramatically increasing conduction loss. (3) Forgetting the body diode reverse-recovery characteristics — in half-bridge configurations the anti-parallel body diode of the synchronous MOSFET must be characterized or replaced with an external Schottky for hard-switched high-frequency designs. Always verify the datasheet's avalanche energy rating E_AS for any inductive-load switching application.
تعمیل کی معلومات
RoHS compliant per Infineon product page; AEC-Q101 automotive qualified per manufacturer datasheet and Arrow listing. Halogen-free and lead-free per Infineon's product-family compliance program.
