IPD35N10S3L26ATMA2 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon
MPN: IPD35N10S3L26ATMA2 ✓ فعالIPD35N10S3L26ATMA2 جائزہ
An N-channel power MOSFET is a voltage-controlled semiconductor switch in which a positive gate-to-source voltage creates a conducting channel between drain and source, enabling efficient high-current switching in power conversion circuits. Within the broader taxonomy it sits between discrete MOSFETs and the wider power-semiconductor family, which also includes IGBTs, thyristors, and wide-bandgap GaN/SiC FETs. OptiMOS-T is Infineon's trench-technology MOSFET platform optimized for low on-resistance per unit silicon area, giving high current density in compact packages.
Key specifications include 71 W maximum power dissipation (Tc), a gate threshold VGS(th) typically in the 2.1 V to 3.5 V range, an avalanche-rated single-pulse drain current supporting unclamped inductive switching, and 100% Rg-tested production parts for paralleling reliability. The PG-TO252-3-11 DPAK footprint provides a low thermal-resistance path through the exposed tab, simplifying PCB heatsinking via copper pour.
Typical applications include 48 V automotive converters (e.g., mild-hybrid DC-DC and e-fuse blocks), automotive electric power steering and braking drivers, motor-drive H-bridges, solenoid and relay switching, and industrial synchronous-rectification stages up to 100 V rails.
Design considerations include keeping the gate-drive loop tight to minimize ringing, sizing the tab copper pour for the application's continuous Id, and confirming avalanche energy EAS for unclamped turn-off events. Compared with non-automotive MOSFETs in the same DPAK footprint, the IPD35N10S3L26ATMA2 adds AEC-Q101 screening for OEM automotive programs.
This page synthesizes distributor pricing, AEC-Q101 cross-reference guidance, and PCB thermal-design notes that supplement the manufacturer datasheet, enabling a faster sourcing and design-in decision for 48 V and 100 V automotive power stages.
کے لیے ڈراپ اِن متبادل IPD35N10S3L26ATMA2 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IPD35N10S3L26ATMA2 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, MSL Level, Part Number, Technology, Product Family.
IPD35N10S3L26ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPD30N10S3L34ATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPD30N10S3L34ATMA2
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPD70N10S312ATMA2
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPD70N10S312ATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPD35N10S3L26ATMA2 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS-T |
| ٹرانزسٹر کی قسم | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID, Tc) | 35 A |
| On-Resistance R<sub>DS(on)</sub> max | 24 mOhm |
| Power Dissipation (Ptot, Tc) | 71 W |
| پیکیج | PG-TO252-3-11 (DPAK) |
| پن کی تعداد | 3 (Drain, Source, Gate + tab) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Automotive Qualification | AEC-Q101 |
| Technology | Trench MOSFET (OptiMOS-T) |
| RoHS اسٹیٹس | Compliant |
| Lead-Free | Yes |
IPD35N10S3L26ATMA2 پن کنفیگریشن
| پن 1 | Gate — MOSFET gate; drive to VGS(th)+ for full enhancement |
| پن 2 | Drain — Drain terminal (connected to exposed tab) |
| پن 3 | Source — Source terminal; connect to gate-drive return |
| پن Tab | Drain — Exposed tab is electrically tied to Drain; thermal pad and PCB heatsink |
محفوظ آپریٹنگ ایریا (DC, Tj=25C initial)
عام استعمالات
IPD35N10S3L26ATMA2 کے لیے موزوں ہے 6 ایپلیکیشنs: 48V Automotive DC-DC Converter, Automotive E-Fuse and Load Switch, Electric Power Steering (EPS) Driver, Industrial Synchronous Rectification (100 V bus), Solenoid and Relay Driver Modules, Brushed DC Motor H-Bridge.
48V Automotive DC-DC Converter
The IPD35N10S3L26ATMA2 is engineered for 48 V mild-hybrid automotive DC-DC converters stepping 48 V down to 12 V for auxiliary loads. Its 100 V V<sub>DS</sub> rating provides 50 V headroom above the 48 V rail, comfortably absorbing inductive transients and load-dump events. With 24 mOhm maximum R<sub>DS(on)</sub> at VGS = 10 V, conduction loss at typical 15-20 A loads stays well under 10 W per switch, and the 71 W power-dissipation rating at Tc with DPAK tab cooling keeps the junction within the AEC-Q101 thermal envelope. The AEC-Q101 screening further qualifies it for OEM 48 V power-module programs.
تجویز کردہ
Automotive E-Fuse and Load Switch
Solid-state e-fuses in 48 V automotive power distribution replace traditional pyrotechnic fuses with a controllable MOSFET-based switch. The IPD35N10S3L26ATMA2 suits this role because its 100 V V<sub>DS</sub> handles 48 V bus transients, the 35 A continuous Id covers most branch-circuit loads, and the 24 mOhm R<sub>DS(on)</sub> keeps steady-state voltage drop below 1 V at full load. The DPAK exposed tab also dissipates fault-current heating during the milliseconds of short-circuit interruption before the gate driver commands turn-off. AEC-Q101 qualification is mandatory for OEM e-fuse modules.
تجویز کردہ
Electric Power Steering (EPS) Driver
Electric power steering requires a robust, AEC-Q101-qualified MOSFET capable of PWM-switching motor currents up to 30 A continuously at 12 V or 48 V rails. The IPD35N10S3L26ATMA2's 35 A continuous drain current at Tc, low 24 mOhm R<sub>DS(on)</sub>, and DPAK package make it a strong candidate for the H-bridge switches in EPS controllers. Its OptiMOS-T trench technology also reduces switching loss at the typical 20 kHz PWM frequency of EPS drives, lowering inverter heating and improving steering-effort smoothness under transient load.
تجویز کردہ
Industrial Synchronous Rectification (100 V bus)
In industrial 60-100 V bus synchronous-rectifier stages (solar optimizers, battery formation, telecom 48 V), the IPD35N10S3L26ATMA2 functions as the low-side MOSFET replacing Schottky diodes. Its 100 V rating handles bus transients, the 24 mOhm R<sub>DS(on)</sub> reduces conduction loss versus a diode, and the 71 W DPAK thermal envelope supports sustained rectification at 20-30 A. The trench OptiMOS-T technology further delivers low Qg, reducing drive losses at 100-300 kHz switching frequencies typical of modern isolated DC-DC stages.
تجویز کردہ
Solenoid and Relay Driver Modules
Automotive and industrial solenoid/relay driver modules require a MOSFET that can absorb the inductive kickback of a de-energized coil. The IPD35N10S3L26ATMA2's 100 V V<sub>DS</sub> rating, combined with its avalanche-rated single-pulse drain current, makes it suitable for direct switching of 12 V or 24 V solenoids without an external TVS clamp. The 35 A continuous Id handles inrush current of even large contactors, and the DPAK footprint is a drop-in match across solenoid-driver PCB variants used by Tier-1 automotive module suppliers.
تجویز کردہ
Brushed DC Motor H-Bridge
Brushed DC motor H-bridges for throttle, valve, and seat-position actuators use four N-channel MOSFETs of which two are high-side and two low-side. The IPD35N10S3L26ATMA2 fits both positions in 12 V and 24 V brushed-motor systems up to 35 A. Its low 24 mOhm R<sub>DS(on)</sub> reduces I²R loss and keeps the H-bridge thermal budget within the DPAK footprint's dissipation limit, while its AEC-Q101 qualification makes it acceptable for under-hood and chassis-mounted motor modules. The exposed tab also simplifies PCB heatsink integration.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IPD35N10S3L26ATMA2 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IPD35N10S3L26ATMA1 | IPD30N10S3L34ATMA1 | IPD30N10S3L34ATMA2 | IPD70N10S312ATMA2 | IPD70N10S312ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V |
| Continuous Drain Current (Id at Tc) | 35 A | 35 A | 30 A (-14%) | 30 A (-14%) | 70 A (+100%) | 70 A (+100%) |
| RDS(on) max at VGS=10V | 24 mOhm | 24 mOhm | ~34 mOhm (+42%) | ~34 mOhm (+42%) | ~12 mOhm (-50%) | ~12 mOhm (-50%) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Technology Family | OptiMOS-T (trench) | OptiMOS-T (trench) | OptiMOS-T (trench) | OptiMOS-T (trench) | OptiMOS-T (trench) | OptiMOS-T (trench) |
اہم امتیازی خصوصیات
- Pin-compatible same-die alternative in TA1 tape orientation (بمقابلہIPD35N10S3L26ATMA1)
- Higher-current upgrade path in identical footprint (بمقابلہIPD70N10S312ATMA2)
- Lower-cost same-footprint option with reduced current (بمقابلہIPD30N10S3L34ATMA1)
ڈیزائن نوٹس
Estimated: at VIN = 48 V, VOUT = 12 V, ID = 20 A continuous conduction in a synchronous buck low-side switch, the IPD35N10S3L26ATMA2 dissipates approximately I²R × (1-D) = 20² × 0.024 × 0.25 = 2.4 W. The PG-TO252-3-11 DPAK package on a 1-square-inch copper pour on a 1 oz FR-4 board typically achieves ThetaJA around 50 C/W, yielding roughly 120 C junction at 100 C ambient - within the AEC-Q101 thermal envelope but requiring verification against your specific PCB stack-up and airflow. Add thermal vias under the tab to inner copper planes for additional reduction.
Keep the gate-drive loop area as small as possible to minimize parasitic inductance that causes VGS ringing and possible shoot-through. Place the gate-driver IC within 10 mm of the gate pin, route gate and source return on adjacent layers, and use a local 10-100 ohm gate resistor plus an optional TVS or 5.1 V Zener from gate to source to clamp below the +/- 20 V VGS maximum. The exposed tab is internally connected to the drain, so PCB copper under the tab doubles as both thermal relief and drain node.
Do not exceed VGS = +/- 20 V absolute maximum; many gate drivers produce 12-15 V which is acceptable, but a misconfigured bootstrap with a 24 V supply will destroy the gate oxide. Also note that AEC-Q101 does not guarantee operation beyond the datasheet's electrical limits - derate continuous Id to roughly 50-60% of the 35 A Tc-rating at realistic PCB case temperatures near 100 C. Finally, confirm EAS (single-pulse avalanche energy) rating from the datasheet before using this part in an unclamped inductive-switching topology.
تعمیل کی معلومات
AEC-Q101 automotive qualified (analogous to AEC-Q100 but specific to discrete semiconductors). RoHS compliant and lead-free per Infineon product page; halogen-free status not explicitly confirmed in retrieved web data.
