IPD30N06S2L13ATMA4 - 55V 30A N-Channel OptiMOS MOSFET | Infineon
MPN: IPD30N06S2L13ATMA4 ✓ فعالIPD30N06S2L13ATMA4 جائزہ
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently and quickly turn DC power on and off in switching converters, motor drives, and load-management circuits. MOSFETs belong to the discrete semiconductor family (transistors), and the N-channel enhancement-mode variant is the most common low-side or half-bridge switch in modern power electronics because electrons (the majority carrier) deliver higher mobility than holes, producing lower Rds(on) for a given die area. Logic-level MOSFETs such as the IPD30N06S2L-13 family extend that advantage down to 4.5 V gate drives typical of microcontrollers.
This part's differentiator is its Rds(on) per package area in the 55 V class, enabling higher current handling or smaller PCB footprints than older planar MOSFETs. Logic-level Vgs(th) allows direct microcontroller GPIO drive, eliminating the need for a gate-driver IC in low-frequency switching applications. Automotive-grade AEC-Q101 qualification and 175 °C Tj(max) provide robustness under hood and industrial environments where parts must survive thermal cycling and transient over-voltages.
The device is typically used as the low-side switch in 12 V/24 V automotive ECUs, H-bridge motor half-stages, solenoid and valve drivers, and DC-DC converter synchronous rectifiers. The 3-pin DPAK footprint with a large tab is the de-facto industry standard for medium-power surface-mount MOSFETs, and the part is supplied in 13-inch tape-and-reel for high-volume SMT lines.
Designers should pay attention to gate-drive rise/fall times and dv/dt-induced turn-on; a small gate-source resistor (10-100 kΩ) is recommended to hold the device off during high dV/dt transients. Thermal design must keep Tj below 175 °C under worst-case SOA conditions, considering both DC steady-state and pulsed (single-pulse or 100 ms) operation.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
کے لیے ڈراپ اِن متبادل IPD30N06S2L13ATMA4 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IPD30N06S2L13ATMA4 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, Drain-Source Voltage (VDS), MSL Level, Automotive Qualification.
IPD30N06S2L-13
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPD30N08S2L21ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPD30N10S3L34ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPD30N10S3L34ATMA2
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPD90N06S407ATMA2
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPD30N06S2L13ATMA4 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS |
| Channel Type | N-Channel |
| Mode | Enhancement |
| Drain-Source Voltage (Vds) | 55 V |
| Continuous Drain Current (Id) | 30 A (Tc) |
| Power Dissipation (Pd) | 136 W (Tc) |
| پیکیج | PG-TO252-3-11 (DPAK) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| آپریٹنگ درجہ حرارت | -55 °C to +175 °C (Tj) |
| Automotive Qualification | AEC-Q101 qualified |
| MSL (Moisture Sensitivity Level) | MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) |
| Lead-Free / RoHS | Yes (Green Package) |
| Avalanche Tested | 100 % production-tested |
| Technology | Planar (OptiMOS) |
| پن کی تعداد | 3 (Drain tab + Gate + Source) |
| Tape and Reel Packaging | Yes (T&R per IEC 60286-3) |
IPD30N06S2L13ATMA4 پن کنفیگریشن
| پن 1 | Gate — Gate drive input (logic-level) |
| پن 2 | Drain (tab) — Drain terminal, connected to the metal tab on the back of the package for thermal dissipation |
| پن 3 | Source — Source terminal, return path for gate and drain |
محفوظ آپریٹنگ ایریا (estimated envelope based on 136W Tc rating)
عام استعمالات
IPD30N06S2L13ATMA4 کے لیے موزوں ہے 7 ایپلیکیشنs: 12V Automotive Solenoid and Valve Drivers, H-Bridge Motor Half-Stages (Bldc / Dc), Synchronous Rectifier for 12V/24V DC-DC Converters, Battery Protection and Load Switch, LED Driver Power Stage, Industrial 24V PLC and I/O Module Outputs, USB-PD and Auxiliary Power-Path Switching.
12V Automotive Solenoid and Valve Drivers
The IPD30N06S2L13ATMA4 is widely used as the low-side switch driving 12 V automotive solenoids, valves, and actuators inside ECUs. Its 30 A continuous drain current handles inrush transients from solenoid kick-off, while the 55 V Vds rating covers 12 V bus plus load-dump clamping margin. The logic-level Vgs(th) lets the part be driven directly from a 4.5 V microcontroller GPIO through a small gate resistor, eliminating a gate-driver IC. AEC-Q101 qualification and 175 °C Tj(max) deliver the reliability margin required by under-hood automotive environments with sustained 85 °C ambient. The DPAK footprint with exposed tab provides a low-thermal-resistance path to the PCB copper pour.
تجویز کردہ
H-Bridge Motor Half-Stages (Bldc / Dc)
The IPD30N06S2L13ATMA4 is well-matched to the low-side positions of an H-bridge driving small BLDC or brushed-DC motors in 12 V/24 V systems. Its 30 A continuous current supports motors up to several hundred watts, while the AEC-Q101 grade makes it suitable for automotive body-comfort modules (window, seat, fan, pump). Fast switching transitions minimize switching losses, but a 10-100 kΩ gate-source pull-down is recommended to prevent dv/dt-induced turn-on in the half-bridge deadtime. The DPAK footprint enables compact half-bridge layouts with shared thermal copper, and two of these parts can be paralleled for higher current stages without changing the land pattern.
تجویز کردہ
Synchronous Rectifier for 12V/24V DC-DC Converters
In non-isolated buck or buck-boost converters running from a 24 V industrial bus, the IPD30N06S2L13ATMA4 can serve as the synchronous rectifier (low-side) MOSFET. Its 55 V Vds rating covers 24 V nominal plus switching-node spikes, and the ultra-low Rds(on) of the OptiMOS family minimizes conduction losses during the synchronous-rectifier on-time, lifting overall converter efficiency by 1-3 percentage points versus a Schottky-diode rectifier. The logic-level gate drive allows direct PWM control from a buck-controller IC at 100-500 kHz. AEC-Q101 qualification is a bonus for industrial converters that must meet automotive-grade reliability in factory-automation or harsh-environment applications.
تجویز کردہ
Battery Protection and Load Switch
The IPD30N06S2L13ATMA4 functions as a high-current load-disconnect switch in 12 V battery management systems and UPS-style backup circuits. Its low Rds(on) reduces steady-state I²R loss when the load is connected, while its 30 A rating covers inrush from capacitive loads downstream of the disconnect. Reverse-battery protection can be implemented by placing the MOSFET in series with the load and pulling the gate to ground; the body diode naturally conducts during reverse-battery fault but the part survives because Vds remains bounded. The AEC-Q101 grade suits e-bike, e-scooter, and other light-electric-vehicle battery systems.
تجویز کردہ
LED Driver Power Stage
In constant-current LED drivers for automotive exterior lighting (DRL, fog, turn signal) or industrial high-bay luminaires, the IPD30N06S2L13ATMA4 acts as the main switching element in a buck or buck-boost topology. The 30 A rating supports LED strings drawing 5-10 A with PWM dimming up to 1 kHz without thermal issues, while the 55 V Vds easily handles the rectified 12 V/24 V mains plus switching transients. Logic-level Vgs(th) means the LED-driver IC can drive the gate directly through a small resistor, simplifying BOM and reducing cost. AEC-Q101 grade and 175 °C Tj(max) deliver the long-life margin needed for 50,000-hour luminaire designs.
تجویز کردہ
Industrial 24V PLC and I/O Module Outputs
The IPD30N06S2L13ATMA4 is well-suited to industrial PLC digital-output modules driving 24 V solenoids, relays, and indicator lamps. Its 55 V rating covers the 24 V nominal industrial bus plus transient suppression, and the 30 A continuous current supports multi-channel modules where several outputs may be active simultaneously. The logic-level gate allows direct drive from a 3.3 V or 5 V PLC-output stage, simplifying the I/O circuit. AEC-Q101 over-qualification gives extra margin for industrial environments with wide temperature swings and vibration. The DPAK footprint's large tab provides robust thermal dissipation when several outputs are stacked on a single heatsink.
تجویز کردہ
USB-PD and Auxiliary Power-Path Switching
In USB-PD chargers, e-mobility charging stations, and auxiliary power-path controllers, the IPD30N06S2L13ATMA4 can be used as the load-switch or ORing MOSFET on 12 V/24 V rails. Its low Rds(on) minimizes voltage drop and I²R loss in the always-on path, while the 30 A rating covers peak USB-PD 100 W / 240 W power levels at 20 V/28 V bus rails. The logic-level gate is compatible with USB-PD controller GPIO drive through a small gate resistor. AEC-Q101 grade benefits chargers installed in vehicles or e-bikes that must survive automotive transients. The DPAK package provides robust thermal performance at sustained high current.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IPD30N06S2L13ATMA4 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IPD30N06S2L-13 | IPD30N08S2L21ATMA1 | IPD30N10S3L34ATMA1 | IPD30N10S3L34ATMA2 | IPD90N06S407ATMA2 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) |
| Drain-Source Voltage (Vds) | 55 V | 55 V | 75 V | 100 V | 100 V | 60 V |
| Continuous Drain Current (Id) | 30 A | 30 A | 30 A | 30 A | 30 A | 30 A |
| Automotive Grade (AEC-Q101) | Yes | No (industrial only) | Yes | Yes | Yes | Yes |
| Operating Junction Temperature | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
| Channel Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Logic-Level Vgs(th) | Yes | Yes | Yes | Yes | Yes | Yes |
اہم امتیازی خصوصیات
- Lowest Rds(on) in 55 V OptiMOS DPAK class (بمقابلہIPD30N08S2L21ATMA1)
- Automotive-grade AEC-Q101 qualification in standard DPAK (بمقابلہIPD30N06S2L-13 (industrial variant))
- Logic-level gate drive directly from 4.5V GPIO (بمقابلہStandard-Vth 55V DPAK MOSFETs)
- MSL1 moisture rating simplifies SMT manufacturing (بمقابلہMSL3-rated competitor DPAK MOSFETs)
ڈیزائن نوٹس
Estimated: at Id=30 A continuous and Vds=24 V steady-state (worst-case DC SOA), the part dissipates P = Vds × Id = 720 W if operated in linear mode, far exceeding the 136 W Tc rating. In actual switching applications (PWM duty cycle ≤ 100%), conduction loss dominates and is Pcond = I²_rms × Rds(on). At 30 A into 10 mΩ Rds(on) the loss is 9 W at 100 % duty. The DPAK package requires at least 1 square inch of 1 oz copper pour per ampere of continuous current to keep Tj rise below 50 °C above ambient. Add a topside thermal pad stitch if Tj approaches 150 °C in your application.
Use a DPAK land pattern compliant with IPC-7351 (TO-252 standard). The exposed tab must be soldered to a copper pour of at least 50 mm² to meet the 136 W power rating; smaller pours force the part into thermal shutdown under high current. Place the gate drive trace away from the drain switching node to minimize dv/dt-induced gate coupling. Add a 10-100 kΩ gate-source pull-down resistor to hold the MOSFET off during microcontroller reset or supply collapse. Input and output capacitors for the surrounding switching converter should be placed within 5 mm of the part's drain and source pads to minimize parasitic loop inductance.
Do not exceed 55 V Vds - the part will avalanche, but sustained operation beyond the absolute-maximum rating destroys the die. Do not drive the gate with more than ±20 V Vgs - the thin gate oxide will rupture. Always check SOA for pulsed operation: the DC SOA curve is more restrictive than pulsed SOA, and high-current short pulses can still push the die into thermal failure if repetition rate is too high. For automotive load-dump protection, add a TVS clamp or active transient suppressor; the IPD30N06S2L13ATMA4 alone does not have avalanche-energy rating to absorb a 35 V load-dump pulse.
For half-bridge layouts, minimize the high-side-to-low-side switching-node copper area to reduce EMI. Use a gate-drive loop area of less than 1 cm² by routing the gate trace directly over the source pad. Place a small (1-10 nF) ceramic bypass capacitor directly between Vcc of the gate driver and the source pin of the IPD30N06S2L13ATMA4 if driving at high dV/dt. For paralleled MOSFETs, use symmetric gate-source resistor placement and a shared gate-driver output to avoid current imbalance caused by threshold-voltage mismatch.
تعمیل کی معلومات
RoHS-compliant Green Package per Infineon product page. AEC-Q101 qualified (automotive grade). Halogen-free per industry-standard Green Package designation. Lead-free reflow compatible with 260 °C peak per MSL1 rating.
