IPD30N10S3L34ATMA2 - 100V 30A N-Ch OptiMOS MOSFET | Infineon
MPN: IPD30N10S3L34ATMA2 ✓ فعالIPD30N10S3L34ATMA2 جائزہ
A power MOSFET is a voltage-controlled semiconductor switch used to modulate or switch DC loads in power electronics. OptiMOS-T is Infineon's trench-technology MOSFET platform optimized for low on-state resistance per unit area, fast body diode, and low gate charge. Within the broader taxonomy, the IPD30N10S3L34ATMA2 belongs to the N-channel enhancement-mode power MOSFET family, which sits inside the discrete semiconductor hierarchy alongside IGBTs and BJTs. The PG-TO252-3-11 (DPAK) package category belongs to the surface-mount discrete family, descended from through-hole TO-220 / TO-247 packages.
Key features include a maximum continuous drain current of 30 A at Tc, 57 W power dissipation (Tc), threshold voltage V_GS(th) of 2.4 V max, and an operating junction temperature range of -55 C to +175 C. The low 31 mOhm R_DS(on) at 10 V V_GS minimizes conduction losses in high-current paths, while the 31 nC total gate charge supports switching frequencies up to several hundred kHz. The combination of low Qg and low R_DS(on) yields an excellent Figure-of-Merit (FOM = R_DS(on) x Qg) for this voltage class.
The device is fabricated using Infineon's OptiMOS-T trench process, which achieves very low specific on-resistance by minimizing cell pitch while preserving avalanche ruggedness. The intrinsic body diode is robust enough for hard-switching bridge topologies, with dv/dt capability suitable for motor-drive half-bridges. The DPAK package offers a low thermal resistance path through the drain tab, enabling direct PCB cooling when the copper pad area is sized appropriately.
Typical applications include automotive 12 V / 24 V load switching, electric power steering (EPS), DC-DC converter high-side switches, motor drive H-bridges, solenoid and relay drivers, and battery management systems. The AEC-Q101 qualification makes it suitable for under-the-hood and chassis electronics where reliability under thermal cycling and vibration is mandatory.
When designing with this MOSFET, ensure the gate-drive voltage reaches at least 10 V for full enhancement and minimal R_DS(on). The drain tab must be soldered to a copper pour sized to keep junction temperature below 150 C under worst-case load. Use a gate-source resistor of 10-100 kOhm to prevent unwanted turn-on from Miller-induced dv/dt coupling.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on a single manufacturer product page.
کے لیے ڈراپ اِن متبادل IPD30N10S3L34ATMA2 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IPD30N10S3L34ATMA2 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Technology, Package, MSL Level, Operating Temperature Range, Part Number.
IPD30N10S3L34ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPD70N10S312ATMA2
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPD33CN10NGATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPD90N06S407ATMA2
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPD082N10N3GATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPD30N10S3L34ATMA2 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| FET Type | N-Channel |
| Drain-Source Voltage (V_DS) | 100 V |
| Continuous Drain Current (I_D, Tc) | 30 A |
| Pulsed Drain Current (I_DM) | 180 A |
| Power Dissipation (P_D, Tc) | 57 W |
| R_DS(on) max at V_GS=10V | 31 mOhm (typ) |
| Gate Threshold Voltage V_GS(th) max | 2.4 V |
| Total Gate Charge (Qg) max | 31 nC |
| آپریٹنگ جنکشن درجہ حرارت | -55 C to +175 C |
| Package / Supplier Device Package | PG-TO252-3-11 (DPAK) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Pin / Tab Count | 3 (2 + Tab) |
| Technology | OptiMOS-T (trench) |
| Automotive Qualification | AEC-Q101 |
| RoHS اسٹیٹس | Compliant |
IPD30N10S3L34ATMA2 پن کنفیگریشن
| پن 1 | Gate — Gate drive input; 10V V_GS typical for full enhancement |
| پن 2 | Drain — Drain terminal; internally connected to the mounting tab |
| پن 3 | Source — Source terminal; reference for gate drive |
| پن Tab | Drain — Drain tab (electrically tied to Pin 2); main thermal path and high-current terminal |
محفوظ آپریٹنگ ایریا (DC)
عام استعمالات
IPD30N10S3L34ATMA2 کے لیے موزوں ہے 6 ایپلیکیشنs: Automotive 12V/24V Load Switching, Electric Power Steering (EPS) Motor Drive, DC-DC Converter High-Side / Low-Side Switch, Battery Management System (BMS) Protection, Industrial Solenoid and Relay Driver, Brushed DC Motor Drive (Automotive and Industrial).
Automotive 12V/24V Load Switching
The IPD30N10S3L34ATMA2's 100 V V_DS rating gives substantial margin above nominal 12 V and 24 V automotive bus rails, tolerating load-dump transients up to 40 V without avalanche breakdown. Its 30 A continuous drain current drives high-current resistive and inductive loads such as headlamp ballasts, seat heaters, and HVAC blowers, while the 31 mOhm R_DS(on) keeps conduction loss under 2.5 W at 9 A typical load. AEC-Q101 qualification and -55 C to +175 C junction range ensure reliability in under-hood environments with thermal cycling and vibration stress.
تجویز کردہ
Electric Power Steering (EPS) Motor Drive
In EPS half-bridge and H-bridge configurations, the IPD30N10S3L34ATMA2 switches the brushless DC motor phase windings with low conduction loss and robust body-diode reverse recovery. The 180 A pulsed current rating handles motor start-up and reverse-current spikes, while the 31 nC total gate charge keeps switching loss manageable at 20-50 kHz PWM frequencies typical of EPS controllers. AEC-Q101 qualification matches the stringent automotive safety integrity level (ASIL) requirements for steering subsystems.
تجویز کردہ
DC-DC Converter High-Side / Low-Side Switch
The IPD30N10S3L34ATMA2 works as either the high-side or low-side switch in 12 V to 48 V buck and boost converters up to several hundred watts. Its 31 mOhm R_DS(on) at V_GS = 10 V yields low conduction loss, and the 31 nC Qg supports switching frequencies up to 500 kHz, enabling compact inductor and capacitor selection. The PG-TO252-3-11 package provides a thermal pad for direct PCB cooling, which is critical at the 57 W power dissipation rating.
تجویز کردہ
Battery Management System (BMS) Protection
In BMS disconnect and pre-charge circuits, the IPD30N10S3L34ATMA2 acts as a low-resistance solid-state switch replacing traditional contactors, with 31 mOhm R_DS(on) keeping continuous current path loss low. The 100 V V_DS handles series-cell battery packs up to 36 V nominal, and AEC-Q101 qualification ensures long-term reliability under the temperature swings of battery enclosures. Its fast switching capability supports pre-charge resistor bypass within milliseconds of contactor-closure detection.
تجویز کردہ
Industrial Solenoid and Relay Driver
The IPD30N10S3L34ATMA2 drives 24 V industrial solenoids, pneumatic valves, and mechanical relays with low-side N-channel switching topology. Its 30 A continuous current easily handles the inrush of large solenoids, while the rugged OptiMOS-T body diode clamps inductive kickback without external freewheeling diodes in many cases. The PG-TO252-3-11 package's tab connection provides both thermal relief and a low-inductance source-return path for fast switching edges.
تجویز کردہ
Brushed DC Motor Drive (Automotive and Industrial)
For brushed DC motor H-bridges driving window lifts, seat adjusters, fans, pumps, and small industrial drives, the IPD30N10S3L34ATMA2 provides the per-leg switching element with robust avalanche energy absorption. The 180 A pulsed current handles motor stall conditions, while the 31 mOhm R_DS(on) keeps bridge dissipation low for thermal-conscious PCB layouts. The DPAK footprint allows compact bridge designs with all four FETs on a single thermal copper pour, simplifying thermal management.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IPD30N10S3L34ATMA2 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IPD30N10S3L34ATMA1 | IPD70N10S312ATMA2 | IPD33CN10NGATMA1 | IPD90N06S407ATMA2 |
|---|---|---|---|---|---|
| Package | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same |
| Brand | Infineon | Infineon - same | Infineon - same | Infineon - same | Infineon - same |
| V_DS max (V) | 100 V | 100 V | 100 V | 100 V | 60 V |
| Continuous I_D (A) | 30 A | 30 A | 70 A | 33 A | 90 A |
| Automotive Grade | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Technology | OptiMOS-T (trench) | OptiMOS-T | OptiMOS | OptiMOS | OptiMOS |
اہم امتیازی خصوصیات
- Original ATMA2 packing revision with confirmed availability (بمقابلہIPD30N10S3L34ATMA1)
- OptiMOS-T technology with industry-leading FOM (بمقابلہIPD70N10S312ATMA2)
- AEC-Q101 qualified with extended temperature range (بمقابلہIPD90N06S407ATMA2)
ڈیزائن نوٹس
Estimated: at I_D = 30 A continuous and R_DS(on) = 31 mOhm, conduction loss is approximately 28 W, exceeding the 57 W P_D rating only at elevated Tc. The PG-TO252-3-11 (DPAK) tab must be soldered to a copper pour of at least 1 square inch (645 mm^2) on a 2 oz copper layer to achieve theta_JA below 50 C/W. Without active cooling, expect practical continuous current ceiling of 15-20 A. Use multiple thermal vias under the tab to spread heat into inner copper planes.
Layout the gate-drive loop (gate resistor -> gate pin -> source pin -> gate-driver ground) as small as physically possible, ideally under 1 nH loop inductance, to prevent gate-rail ringing and dv/dt-induced Miller turn-on. Place a 10-100 kOhm gate-source resistor directly at the gate pin to ensure the MOSFET stays off during controller power-up. Use a 4-layer PCB with a dedicated ground plane below the switching node to minimize parasitic inductance on the drain-source loop.
Do not exceed V_GS = +/-20 V absolute maximum; gate-source ESD damage is a common failure mode when the gate is left floating during handling or hot-plug events. Ensure the gate-drive voltage reaches at least 10 V for full enhancement; partial enhancement at V_GS = 4-6 V dramatically increases R_DS(on) and can cause thermal runaway. For high-side N-channel switching, include a bootstrap or charge-pump supply because the source pin voltage rises above ground when the FET is on.
Keep the switching-node copper area minimal to reduce radiated EMI; however, provide adequate copper for current handling (1 oz copper handles roughly 1 A per mm of trace width with 10 C temperature rise). For half-bridge layouts, interleave high-side and low-side FET drains with a shared thermal copper pour, but keep gate traces separated to avoid cross-conduction. Place bulk input capacitors within 5 mm of the high-side drain to minimize parasitic inductance that causes voltage spikes during switching transitions.
تعمیل کی معلومات
AEC-Q101 (automotive) qualified per Infineon product page; RoHS and REACH compliant; MSL level not stated in the verified data and is marked [DATA_NEEDED] in specs.
