IQE008N03LM5CGATMA1 - 30V 253A OptiMOS 5 N-Channel MOSFET | Infineon
MPN: IQE008N03LM5CGATMA1 ✓ فعالIQE008N03LM5CGATMA1 جائزہ
A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated-gate field-effect structure to modulate conduction between source and drain terminals. It belongs to the discrete semiconductor hierarchy: MOSFET -> transistor -> discrete semiconductor. Low-voltage MOSFETs such as this OptiMOS 5 part are widely used as synchronous rectification switches and buck/boost converter high-side or low-side elements, where their gate-charge and on-resistance determine switching and conduction losses respectively.
The IQE008N03LM5CGATMA1 leverages Infineon's OptiMOS 5 technology platform to achieve an extremely low figure of merit (FOM = RDS(on) x QG), targeting high-frequency, high-current-density applications. Its ±16 V VGS rating gives strong margin against typical 10 V driver rails. The combination of 0.85 mOhm on-resistance and 89 W power dissipation supports very high pulse currents, making the device suitable for hot-swap and e-fuse circuits where the MOSFET must absorb inrush energy without latch-up.
Typical applications include synchronous rectification in 12 V buck converters for server and telecom point-of-load (POL) rails, hot-swap controllers on 12 V backplanes, battery management system (BMS) protection in 1-4S Li-ion packs, USB-PD power delivery switching, motor drive H-bridges in 12-24 V systems, and automotive ECU load switches. The low on-resistance minimizes conduction loss while the small PG-TTFN-9-1 footprint maximizes power density.
Designers should ensure adequate copper pour (at least 100 mm^2) under the exposed pad to achieve rated 89 W power dissipation, and gate-drive resistors in the 2-10 ohm range to suppress ringing. Per the manufacturer datasheet, all ratings assume case temperature held at the specified value; de-rating is required based on actual PCB thermal performance. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
کے لیے ڈراپ اِن متبادل IQE008N03LM5CGATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IQE008N03LM5CGATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Operating Temperature Range, Technology, Drain-Source Voltage (VDS), Product Family.
IQE012N03LM5CGATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IQE050N08NM5CGATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IQE018N06NM6CGATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IQE036N08NM6CGATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISC045N03L5SATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC019N04LSTATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IQE008N03LM5CGATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 5 |
| Polarity / Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at Ta=25C | 27 A |
| Continuous Drain Current (ID) at Tc=25C | 253 A |
| On-Resistance (RDS(on)) at VGS=10V | 0.85 mOhm (typ) @ 20 A |
| Gate-Source Voltage (VGS) Max | +/-16 V |
| Total Gate Charge (Qg) at VGS=10V | 64 nC (typ) |
| Input Capacitance (Ciss) at VDS=15V | 5700 pF (typ) |
| Power Dissipation (PD) at Ta=25C | 2.1 W |
| Power Dissipation (PD) at Tc=25C | 89 W |
| آپریٹنگ درجہ حرارت رینج | -55C to +150C (junction) |
| پیکیج | PG-TTFN-9-1 (8-PowerTDFN) with wettable flanks |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Lead-Free / RoHS | Yes (compliant per Infineon product page) |
IQE008N03LM5CGATMA1 پن کنفیگریشن
| پن 1 | GATE — Gate input - drive with 10V typical; +/-16V VGS max |
| پن 2 | DRAIN — Drain terminal - high current path |
| پن 3 | DRAIN — Drain terminal - high current path |
| پن 4 | DRAIN — Drain terminal - high current path |
| پن 5 | SOURCE — Source terminal - low-side return |
| پن 6 | SOURCE — Source terminal - low-side return |
| پن 7 | SOURCE — Source terminal - low-side return |
| پن 8 | SOURCE — Source terminal - low-side return |
| پن 9 | SOURCE — Source terminal - low-side return |
| پن PAD | DRAIN (Exposed Pad) — Drain terminal - thermal pad, must be soldered for rated performance |
محفوظ آپریٹنگ ایریا (DC)
عام استعمالات
IQE008N03LM5CGATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: 12V Synchronous Rectification, Hot-Swap / eFuse Controller Switch, 1-4S Li-Ion Battery Protection Switch, USB-PD Power Delivery Switching, Automotive 12V ECU Load Switch, Brushless DC Motor Drive H-Bridge.
12V Synchronous Rectification
The IQE008N03LM5CGATMA1's 0.85 mOhm RDS(on) and 64 nC gate charge make it ideal for the low-side synchronous MOSFET in 12 V buck converters for server and telecom point-of-load (POL) rails. At 20 A continuous drain current, conduction loss is only 0.34 W, and at 500 kHz switching frequency the gate-drive loss of approximately 32 mW contributes negligibly. The 30 V VDS rating provides ample margin over 12 V nominal with 16 V transient spikes per USB-PD specifications, and the small PG-TTFN-9-1 footprint allows high-density layouts of multi-phase VRMs.
تجویز کردہ
Hot-Swap / eFuse Controller Switch
In 12 V backplane hot-swap and e-fuse applications, the IQE008N03LM5CGATMA1 acts as the main load switch absorbing inrush current during board insertion. Its 253 A pulsed drain current at 25 C case provides enormous safe operating area (SOA) margin for transient short-circuit conditions during capacitor charging. The wettable-flank PG-TTFN-9-1 package enables AOI inspection on high-reliability server and storage backplanes, while the low RDS(on) keeps continuous conduction loss below 1 W at 30 A - critical for keeping the eFuse cool in confined 1U chassis.
تجویز کردہ
1-4S Li-Ion Battery Protection Switch
The IQE008N03LM5CGATMA1's ultra-low 0.85 mOhm RDS(on) makes it an ideal low-side protection MOSFET in 1-4S Li-ion battery management systems (BMS). At 10 A discharge current, conduction loss is only 85 mW - critical for preserving battery runtime in cordless power tools, e-bikes, and portable medical devices. The 30 V VDS rating provides adequate margin over the maximum 4S pack voltage of 16.8 V plus inductive transients during relay turn-off. Gate-charge of 64 nC enables fast short-circuit disconnect within 5 us, exceeding UL 2054 fault response requirements.
تجویز کردہ
USB-PD Power Delivery Switching
The IQE008N03LM5CGATMA1 serves as a high-current load switch in USB Power Delivery 3.1 applications where 28 V / 36 V / 48 V EPR (Extended Power Range) contracts require robust VBUS switching. Its 30 V VDS rating supports SPR (Standard Power Range) 20 V contracts with margin, while its 0.85 mOhm RDS(on) keeps conduction loss under 1.7 W at 45 A peak EPR current. The small PG-TTFN-9-1 footprint enables ultra-compact USB-PD dongle designs, and the 64 nC Qg is compatible with standard USB-PD controller PWM drivers operating at 100-300 kHz.
تجویز کردہ
Automotive 12V ECU Load Switch
In 12 V automotive body and chassis ECUs - body control modules, lighting drivers, and HVAC actuators - the IQE008N03LM5CGATMA1 functions as a high-side or low-side load switch handling 5-20 A continuous loads. Its 30 V VDS rating covers 12 V nominal with load-dump transients up to 35 V per ISO 16750-2. The wettable-flank PG-TTFN-9-1 package passes stringent automotive solder joint inspection, and the 89 W power dissipation capability supports high inrush loads like headlamp ballasts without thermal limiting. Confirm AEC-Q100 qualification status against the latest datasheet revision for production designs.
تجویز کردہ
Brushless DC Motor Drive H-Bridge
The IQE008N03LM5CGATMA1's combination of 0.85 mOhm RDS(on), 27 A continuous current, and 89 W power dissipation makes it ideal as the low-side switch in 12 V / 24 V brushless DC (BLDC) motor drive H-bridges. In a 3-phase bridge driving a 200 W spindle motor, each FET dissipates approximately 0.4 W at 10 A continuous phase current - easily handled without heatsinking. The 64 nC gate charge enables PWM frequencies up to 50 kHz for smooth torque control, while the wettable-flank package ensures reliability under high-vibration automotive and industrial environments.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IQE008N03LM5CGATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IQE012N03LM5CGATMA1 | IQE050N08NM5CGATMA1 | BSC019N04LSTATMA1 | ISC045N03L5SATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TTFN-9-1 (8-PowerTDFN) | PG-TTFN-9-1 (8-PowerTDFN) - same | PG-TTFN-9-1 (8-PowerTDFN) - same | PG-TTFN-9-1 (8-PowerTDFN) - same | PG-TTFN-9-1 (8-PowerTDFN) - same |
| Drain-Source Voltage (VDS) | 30 V | 30 V | 80 V | 40 V | 30 V |
| On-Resistance (RDS(on)) at 10V VGS | 0.85 mOhm | 1.2 mOhm | 5.0 mOhm | 1.9 mOhm | 0.45 mOhm |
| Continuous Drain Current (Ta=25C) | 27 A | 24 A | 12 A | 20 A | 30 A |
| Total Gate Charge (Qg) | 64 nC | 55 nC | 75 nC | 85 nC | 70 nC |
| Power Dissipation (Tc=25C) | 89 W | 83 W | 78 W | 75 W | 92 W |
| Wettable Flank (AOI Capable) | Yes | Yes | Yes | Yes | Yes |
اہم امتیازی خصوصیات
- Lowest RDS(on) in 30V OptiMOS 5 PG-TTFN-9-1 family (بمقابلہIQE012N03LM5CGATMA1)
- Higher VDS rating for 24V industrial compatibility vs 30V OptiMOS parts (بمقابلہISC045N03L5SATMA1)
- Wettable-flank package for AOI-compatible automotive/industrial assembly (بمقابلہBSC019N04LSTATMA1)
ڈیزائن نوٹس
Estimated: At 20 A continuous conduction with the part in still air on a 4-layer FR4 PCB with 50 mm^2 copper pour under the exposed pad, junction-to-ambient thermal resistance is approximately 60 C/W. Steady-state power dissipation at 20 A is 0.85 mOhm * 20^2 = 0.34 W, giving a junction temperature rise of about 20 C above ambient. To achieve the rated 89 W at Tc=25C, the PCB must keep the case temperature pinned at 25C via a heatsink or large copper pour of at least 100 mm^2. For continuous >15 A operation, always design for case temperature monitoring via the source pin resistance.
Place at least four thermal vias (0.3 mm diameter, 1 mm pitch) directly under the PG-TTFN-9-1 exposed pad to conduct heat from the top copper layer to inner and bottom layers. The wettable-flank terminations require a rectangular PCB pad extension of approximately 0.3 mm beyond the package edge to ensure proper AOI inspection. Keep high-current drain and source traces short and wide (at least 2 mm wide per 5 A of current) to minimize parasitic inductance that can cause voltage spikes during switching transitions.
Do not exceed VGS of +/-16 V - gate oxide breakdown is permanent. Add a 10 kOhm gate-to-source resistor to prevent floating-gate turn-on during power-up sequencing. For 12 V applications, drive the gate with 10 V (not 12 V directly) to stay within VGS rating with margin. Always check the SOA curve at your specific VDS and ID operating point - the 27 A continuous rating assumes Ta=25C with specific PCB conditions per the datasheet Diagram 2.
تعمیل کی معلومات
RoHS and lead-free compliance confirmed via Infineon product page. Wettable-flank terminations support AOI inspection per IPC-A-610. AEC-Q100 status requires datasheet verification for automotive production use.
