IQE008N03LM5ATMA1 - 30V 0.85mΩ OptiMOS 5 N-Ch MOSFET | Infineon
MPN: IQE008N03LM5ATMA1 ✓ فعالIQE008N03LM5ATMA1 جائزہ
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or regulate current in power conversion circuits. Within the broader taxonomy, this part sits in the N-channel MOSFET family under discrete semiconductors and power management, and OptiMOS 5 is Infineon's 30 V–250V platform optimized for synchronous rectification, DC-DC conversion, and hot-swap applications where lowest conduction loss and smallest footprint are required.
Key features include an industry-leading figure-of-merit (FOM = RDS(on) x Qg), 100% Rg-tested avalanche ruggedness, and a leadless exposed-pad package that achieves low thermal resistance. Per the manufacturer datasheet, the device is rated for 2.1 W power dissipation at TA = 25 °C and 89 W at TC = 25 °C on a 40x40x1.5 mm FR4 PCB with 6 cm² copper drain area, allowing design engineers to push high currents without external heatsinks in space-constrained layouts.
The Source-Down architecture repositions the silicon die inside the TSON-8-4 package so the source potential is on the bottom thermal pad. This vertical-current-flow topology reduces source inductance, improves current sharing when paralleled, and simplifies PCB thermal design by allowing the source tab to be soldered directly to a top-side copper pour for maximum heat extraction.
Typical applications include high-current synchronous buck converters in servers and telecom brick converters, hot-swap controllers in 12 V distributed-architecture boards, OR-ing FETs for redundant power supply modules, and battery protection circuits in e-mobility and battery management systems. The Source-Down configuration is particularly advantageous where multiple FETs are paralleled to share load current.
When designing with this MOSFET, ensure the gate drive voltage reaches at least 10 V for full RDS(on) enhancement and place the gate resistor close to the gate pin to suppress ringing. The exposed source pad must be soldered to a sufficiently large copper pour (>=1 cm²) to achieve the rated thermal performance; ignoring this will cause thermal runaway well below the datasheet current rating.
کے لیے ڈراپ اِن متبادل IQE008N03LM5ATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IQE008N03LM5ATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Operating Temperature Range, Package, Technology, Series, Drain-Source Voltage (VDS).
IQE008N03LM5CGATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC011N03LSATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISC009N06LM5ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC027N06LS5ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC020N03LSGATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IQE008N03LM5ATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 5 |
| Polarity / Channel Type | N-Channel |
| Drain-Source Voltage (VDS) Max | 30 V |
| Continuous Drain Current (ID) at TA=25°C | 27 A |
| Continuous Drain Current (ID) at TC=25°C | 253 A |
| On-Resistance RDS(on) Typical | 0.85 mΩ (at 20 A, VGS=10 V per LCSC datasheet snippet) |
| Gate Threshold Voltage (VGS(th)) | 2 V (at 250 µA per LCSC snippet) |
| Power Dissipation at TA=25°C | 2.1 W |
| Power Dissipation at TC=25°C | 89 W |
| پیکیج | PG-TSON-8-4 (3.3 x 3.3 mm), Source-Down |
| ماؤنٹنگ ٹائپ | Surface Mount |
| آپریٹنگ درجہ حرارت رینج | -55°C to +150°C (typical MOSFET junction rating) |
| Gate-Source Voltage (VGS) Max | ±20 V (typical MOSFET rating) |
| Technology | OptiMOS 5, Source-Down |
| RoHS اسٹیٹس | Compliant (per LCSC listing) |
IQE008N03LM5ATMA1 پن کنفیگریشن
| پن 1 | Gate (G) — Gate drive input |
| پن 2 | Source (S) — Source-sense / auxiliary source |
| پن 3 | Drain (D1) — Drain connection segment 1 |
| پن 4 | Drain (D2) — Drain connection segment 2 |
| پن 5 | Drain (D3) — Drain connection segment 3 |
| پن 6 | Drain (D4) — Drain connection segment 4 |
| پن 7 | Drain (D5) — Drain connection segment 5 |
| پن 8 | Drain (D6) — Drain connection segment 6 |
محفوظ آپریٹنگ ایریا (DC, TC=25°C)
عام استعمالات
IQE008N03LM5ATMA1 کے لیے موزوں ہے 7 ایپلیکیشنs: 12V Synchronous Buck Converter, Hot-Swap / OR-ing FET for Redundant Power, Server / Datacenter VRM, Battery Protection / BMS, Industrial Motor Drive / Robotics, Telecom / Network Equipment, Automotive 12V Auxiliary Loads.
12V Synchronous Buck Converter
The IQE008N03LM5ATMA1 is a drop-in low-side synchronous rectifier in 12 V-input buck converters for servers, telecom brick modules, and POL converters. Its 0.85 mΩ RDS(on) at VGS=10 V minimizes conduction loss at 20-25 A loads, while the 30 V VDS rating provides >2x headroom over a 12 V rail plus transient overshoot. The Source-Down PG-TSON-8-4 package allows the source tab to be soldered directly to a top-side copper pour, keeping junction temperature below 100 °C at full load without external heatsinks. Pair with a 30 V OptiMOS 5 high-side such as BSC011N03LSATMA1 for a matched half-bridge.
تجویز کردہ
Hot-Swap / OR-ing FET for Redundant Power
The IQE008N03LM5ATMA1 serves as a hot-swap or OR-ing MOSFET in 12 V redundant power distribution modules where the part must survive inrush transients while maintaining low steady-state loss. With 0.85 mΩ RDS(on) and 30 V VDS, the device holds conduction loss under 1 W at 25 A load while providing 2.5x bus-voltage margin for transient spikes during hot-plug events. The 253 A pulsed ID rating (TC=25 °C) absorbs the initial inrush current, and the Source-Down package simplifies thermal design in multi-FET parallel configurations. Combine with a hot-swap controller IC for SOA protection.
تجویز کردہ
Server / Datacenter VRM
In 48 V-to-POL VRM intermediate bus converters and 12 V CPU core rails, the IQE008N03LM5ATMA1 acts as the synchronous rectifier on the secondary side. The 0.85 mΩ RDS(on) and 30 V VDS are well-matched to 12 V outputs at >50 A per phase, and the Source-Down package enables dense multi-phase parallel layouts without thermal coupling issues. The 89 W TC power dissipation supports continuous high-current operation. Pair with digital controllers for adaptive voltage positioning and current sharing across phases.
تجویز کردہ
Battery Protection / BMS
In battery management systems for e-mobility, UPS, and 12 V/24 V battery packs, the IQE008N03LM5ATMA1 functions as the high-current disconnect MOSFET or discharge FET. The 0.85 mΩ RDS(on) keeps steady-state loss low for continuous 20 A loads, and the 30 V VDS rating covers 8-cell Li-ion stacks (~33 V full-charge) with proper derating. The 253 A pulsed rating handles inrush from motor loads, while the Source-Down package simplifies PCB cooling in tight battery enclosures.
تجویز کردہ
Industrial Motor Drive / Robotics
For low-voltage DC motor drive stages in industrial automation, robotics, and CNC machinery, the IQE008N03LM5ATMA1 serves as the H-bridge low-side switch in 24 V bus architectures. With 0.85 mΩ RDS(on) and 30 V VDS, it handles 20 A continuous phase current while tolerating regenerative braking transients. The Source-Down PG-TSON-8-4 package enables dense 4-FET H-bridge layouts on compact PCBs. Pair with gate drivers and current-sense amplifiers for closed-loop FOC control.
تجویز کردہ
Telecom / Network Equipment
In 12 V distributed-architecture telecom and network switches, the IQE008N03LM5ATMA1 is used as a point-of-load synchronous rectifier or OR-ing element on PoE+ and baseband power rails. The Source-Down package is advantageous when the FET is mounted close to the heat-generating ASIC, allowing the source tab to be cooled by the main PCB copper. The 0.85 mΩ RDS(on) holds efficiency above 96% at 20 A. Compatible with hot-swap and PMBus-monitored POL modules.
تجویز کردہ
Automotive 12V Auxiliary Loads
For automotive 12 V auxiliary systems (body control modules, lighting drivers, e-fuse), the IQE008N03LM5ATMA1 functions as a high-current switch or reverse-battery protection FET. Its 30 V VDS comfortably exceeds the 12 V automotive bus plus load-dump transients (per ISO 7637-2). Note that this is the standard grade; for AEC-Q101-qualified applications, automotive-grade OptiMOS 5 variants (e.g., IAUC family) should be selected. The Source-Down package supports direct PCB heatsinking in sealed modules.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IQE008N03LM5ATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IQE008N03LM5CGATMA1 | BSC011N03LSATMA1 | ISC009N06LM5ATMA1 | BSC027N06LS5ATMA1 | BSC020N03LSGATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TSON-8-4 (3.3x3.3 mm) Source-Down | PG-TSON-8-4 - same | PG-TSON-8-4 (drain-down) - same footprint, different pad | PG-TSON-8-4 - same | PG-TSON-8-4 - same | PG-TSON-8-4 - same |
| VDS Max | 30 V | 30 V | 30 V | 60 V | 60 V | 30 V |
| RDS(on) Typical | 0.85 mΩ | 0.85 mΩ | 1.1 mΩ | 0.9 mΩ | 2.7 mΩ | 2.0 mΩ |
| Technology | OptiMOS 5 Source-Down | OptiMOS 5 Source-Down | OptiMOS 5 (drain-down) | OptiMOS 5 Source-Down | OptiMOS 5 (drain-down) | OptiMOS 5 (drain-down) |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
اہم امتیازی خصوصیات
- Source-Down package enables top-side direct cooling (بمقابلہBSC011N03LSATMA1)
- Improved current sharing for paralleled configurations (بمقابلہBSC020N03LSGATMA1)
- Lower RDS(on) at 30 V than 60 V family members (بمقابلہISC009N06LM5ATMA1)
ڈیزائن نوٹس
Estimated: at ID=20 A, RDS(on)=0.85 mΩ (typical at 25 °C), conduction loss is P=I²R = 20² x 0.00085 ≈ 0.34 W; at 100 °C junction RDS(on) roughly doubles to ~1.7 mΩ and loss increases to ~0.68 W. The Source-Down package exposes the source pad on the bottom; solder it to >=6 cm² top-side copper pour on the PCB to achieve the 89 W TC power dissipation rating. Insufficient source-pad copper will throttle current well below the datasheet 27 A TA rating.
The Source-Down PG-TSON-8-4 package is footprint-compatible with standard drain-down TSON-8-4 PCBs, but the thermal pad must be soldered to the SOURCE plane (not the DRAIN plane). Mistakenly routing the source pad to drain copper will short the MOSFET. Add 4-6 thermal vias under the exposed pad to inner-layer ground/heat-spreader planes for best results. Keep gate trace short (<5 mm) and route gate away from drain switching nodes to minimize dv/dt-induced turn-on.
Do not exceed VGS=±20 V or operate with VGS below 4.5 V at high current (the part is fully enhanced only at VGS=10 V). The body diode has limited reverse-recovery characteristics; in synchronous-rectifier topologies use a dedicated gate driver that prevents simultaneous conduction. Paralleling multiple IQE008N03LM5ATMA1s requires matched gate-drive timing; the Source-Down package helps current sharing but shared-gate resistor layouts still need careful tuning.
Place the gate driver within 5 mm of the gate pin to minimize gate-loop inductance; a 10 Ω gate resistor dampens ringing and reduces EMI. Keep the high-di/dt power-loop (input cap -> high-side -> low-side -> input cap) as tight as possible, ideally <10 nH. For 12 V hot-swap, place a TVS or transient suppressor across the drain-source path to absorb load-dump spikes above 30 V.
تعمیل کی معلومات
RoHS compliant per LCSC listing. Standard grade - NOT AEC-Q100/Q101 qualified. For automotive applications select Infineon IAUC or ISC automotive-grade variants.
