IQE020N04LM6CGSCATMA1 - 40V OptiMOS 6 2.0mΩ N-MOSFET, PG-WHTFN-9
MPN: IQE020N04LM6CGSCATMA1 ✓ فعالIQE020N04LM6CGSCATMA1 جائزہ
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device whose channel conductance is modulated by an insulated gate electrode. Low-voltage N-channel power MOSFETs are the dominant synchronous-rectifier and buck-switch building blocks in switched-mode power supplies, where they sit in the broader hierarchy of power-management semiconductors that includes gate drivers, DC-DC controllers, and linear regulators. Source-Down dual-side-cooled packages like PG-WHTFN-9-1 flip the conventional source-drain layout so the source terminals contact the PCB thermal pad, allowing direct heat extraction from both top and bottom sides of the die.
Key features include Infineon OptiMOS 6 trench technology, low figure-of-merit (RDS(on) × Qg) for high-frequency switching, integrated source-down symmetrical cooling for improved thermal performance, and an optimized gate-charge profile. Per the manufacturer datasheet, the part is qualified for 2.5 W power dissipation at TA = 25 °C and 107 W at TC = 25 °C on a reference 40 mm × 40 mm FR4 PCB with 6 cm² copper.
Typical applications include synchronous rectification in 12 V-to-low-voltage buck converters, battery management system (BMS) protection and charging stages, USB Power Delivery (PD) load switches, hot-swap controllers, and high-current motor-drive low-side switches. The Source-Down thermal path reduces PCB temperature rise versus conventional DFN packages of the same footprint.
When designing with this MOSFET, ensure the gate-drive voltage reaches at least 10 V for full enhancement and minimal RDS(on), and respect the SOA boundaries for pulsed loads. A thermally-optimized PCB layout with adequate via-array stitching under the exposed pad is mandatory to achieve the rated TC performance.
کے لیے ڈراپ اِن متبادل IQE020N04LM6CGSCATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IQE020N04LM6CGSCATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Operating Temperature Range, Technology, MSL Level, Drain-Source Voltage (VDS).
ISZ028N03LF2SATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISZ056N03LF2SATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISZ072N06NM6ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISZ230N10NM6ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISC037N12NM6ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IQEH50NE2LM7UCGSCATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IQDH35N03LM5SCATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IQE020N04LM6CGSCATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS 6 low-voltage power MOSFET |
| Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current at TA=25°C | 25 A |
| Continuous Drain Current at TC=25°C | 166 A |
| Maximum RDS(on) | 2.0 mΩ (per IQE part-number decode) |
| Power Dissipation at TA=25°C | 2.5 W |
| Power Dissipation at TC=25°C | 107 W |
| پیکیج | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm Source-Down dual-side cooled) |
| پن کی تعداد | 9 |
| ماؤنٹنگ ٹائپ | Surface Mount |
| آپریٹنگ درجہ حرارت رینج | -55 °C to +150 °C (junction, per Infineon MOSFET convention) |
| RoHS اسٹیٹس | Compliant |
| Lead-Free | Yes |
| MSL لیول | 1 (per JEDEC J-STD-020 for similar PQFN MOSFETs) |
| Technology | OptiMOS 6 trench |
IQE020N04LM6CGSCATMA1 پن کنفیگریشن
| پن 1 | Source — Source terminal (Source-Down, connected to thermal pad) |
| پن 2 | Source — Source terminal (Source-Down, connected to thermal pad) |
| پن 3 | Gate — Gate drive input |
| پن 4 | Source — Source terminal (Source-Down, connected to thermal pad) |
| پن 5 | Source — Source terminal (Source-Down, connected to thermal pad) |
| پن 6 | Drain — Drain terminal |
| پن 7 | Source — Source terminal (Source-Down, connected to thermal pad) |
| پن 8 | Source — Source terminal (Source-Down, connected to thermal pad) |
| پن 9 | Source — Source terminal (Source-Down, connected to thermal pad) |
محفوظ آپریٹنگ ایریا (DC, Reference PCB)
عام استعمالات
IQE020N04LM6CGSCATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: 12 V Synchronous Rectifier in Buck Converters, Battery Management System (BMS) Protection FET, USB Power Delivery (PD) Load Switch, Hot-Swap Controller Power Switch, Brushless DC (BLDC) Motor Drive Low-Side Switch, Telecom and Server Point-of-Load (POL) Converters.
12 V Synchronous Rectifier in Buck Converters
The IQE020N04LM6CGSCATMA1 is well-suited for the synchronous-rectifier (low-side) position in 12 V input buck converters thanks to its 40 V VDS rating (giving 3× headroom over a 12 V rail) and an exceptionally low 2.0 mΩ RDS(on) at VGS = 10 V. Placed in the Source-Down orientation with the source pad soldered directly to a large copper pour, the device channels switching and conduction losses out both top and bottom die surfaces, reducing PCB temperature rise under continuous 25 A loads. Compared to a standard DFN of similar RDS(on), the PG-WHTFN-9-1 cuts junction-to-ambient thermal resistance by approximately 30 percent per the Infineon Source-Down thermal modeling, enabling higher power density in server, telecom, and USB-PD point-of-load designs.
تجویز کردہ
Battery Management System (BMS) Protection FET
In a battery-management system, the IQE020N04LM6CGSCATMA1 acts as a low-side protection FET in series with the battery pack, where its 2.0 mΩ RDS(on) minimizes voltage drop and self-heating during high-discharge transients. The 40 V rating tolerates load-dump transients common in 12 V automotive and e-mobility battery packs, while the 166 A TC-rated continuous current supports high-C discharge pulses. The Source-Down PG-WHTFN-9-1 package also allows top-side cooling via a thermal interface material to a chassis or heatsink, which is critical in sealed battery enclosures where bottom-side PCB copper is the only available thermal path. This combination makes the part attractive for e-bike BMS, power-tool battery packs, and small-format UPS modules.
تجویز کردہ
USB Power Delivery (PD) Load Switch
The IQE020N04LM6CGSCATMA1 functions as a high-side or low-side load switch in USB-PD source and sink applications where 5 V, 9 V, 15 V, and 20 V profiles are negotiated. The 40 V VDS rating comfortably covers the 20 V PD profile with healthy margin for hot-plug transients, while the 2.0 mΩ RDS(on) at 5 A keeps voltage drop below 10 mV and power dissipation under 50 mW per switch. The Source-Down package enables very compact 3.3×3.3 mm PCB footprints, freeing board area for additional PD ports or larger output capacitors. Compared to competing 40 V MOSFETs in standard DFN packages, this part offers superior RDS(on) × footprint efficiency for space-constrained laptop, tablet, and wall-charger designs.
تجویز کردہ
Hot-Swap Controller Power Switch
As the main pass element in a 12 V or 24 V hot-swap controller, the IQE020N04LM6CGSCATMA1 must withstand inrush currents while remaining within its Safe Operating Area (SOA) during the turn-on transient. The part's 40 V rating and 2.0 mΩ RDS(on) keep conduction losses low in continuous operation, and the Source-Down package provides the dual-side cooling required to dissipate up to 107 W at TC = 25 °C on a properly designed PCB per the Infineon reference layout. The device is ideal for server, telecom, and industrial hot-plug applications where repeated insertion events must not degrade long-term reliability. Designers should use a gate-resistor ramp network and SOA-derating curves to limit the simultaneous VDS and ID stress during turn-on.
تجویز کردہ
Brushless DC (BLDC) Motor Drive Low-Side Switch
In a three-phase BLDC motor-drive inverter, the IQE020N04LM6CGSCATMA1 occupies one of the low-side switch positions where its 2.0 mΩ RDS(on) minimizes I²R loss during continuous motor current. The 40 V VDS rating supports 24 V and 36 V battery systems powering e-bikes, e-scooters, robotics, and small industrial drives. The Source-Down PG-WHTFN-9-1 package improves thermal performance in motor-drive PCBs where the bottom side is often covered by the motor housing, allowing heat extraction from the top side of the die via a thermal pad. Compared to a conventional DFN, this package reduces junction temperature rise by 20-30 percent at the same load current per the Infineon Source-Down thermal data.
تجویز کردہ
Telecom and Server Point-of-Load (POL) Converters
In 48 V-to-12 V or 12 V-to-low-voltage POL converters for telecom and server applications, the IQE020N04LM6CGSCATMA1 delivers high-current synchronous rectification with very low conduction loss. The 2.0 mΩ RDS(on) at VGS = 10 V is essential for 20 A-plus rails such as 1 V and 1.8 V core supplies, where even a 1 mΩ increase translates to 0.4 W additional dissipation per switch. The Source-Down PG-WHTFN-9-1 package supports dense multi-phase layouts with top-side cooling, and the 40 V rating provides margin for transient events on 12 V bus architectures. The part is compatible with multiphase controllers and digital-power management firmware for adaptive voltage scaling in AI-server and networking applications.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IQE020N04LM6CGSCATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | ISZ028N03LF2SATMA1 | ISZ056N03LF2SATMA1 | ISZ072N06NM6ATMA1 | ISC037N12NM6ATMA1 | IQEH50NE2LM7UCGSCATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-WHTFN-9-1 (PQFN 3.3x3.3 mm Source-Down) | PG-WHTFN-9-1 - same | PG-WHTFN-9-1 - same | PG-WHTFN-9-1 - same | PG-WHTFN-9-1 - same | PG-WHTFN-9-1 - same |
| VDS Maximum | 40 V | 30 V | 30 V | 60 V | 120 V | 40 V |
| Maximum RDS(on) | 2.0 mΩ | 2.8 mΩ | 5.6 mΩ | 7.2 mΩ | 3.7 mΩ | 5.0 mΩ |
| Technology Family | OptiMOS 6 | OptiMOS 6 LF2 | OptiMOS 6 LF2 | OptiMOS 6 NM6 | OptiMOS 6 NM6 | OptiMOS 7 LM7 |
| Source-Down Cooling | Yes (dual-side cooled) | Yes (dual-side cooled) | Yes (dual-side cooled) | Yes (dual-side cooled) | Yes (dual-side cooled) | Yes (dual-side cooled) |
| Channel Configuration | Single N-channel | Single N-channel | Single N-channel | Single N-channel | Single N-channel | Single N-channel |
| RoHS Compliant | Yes | Yes | Yes | Yes | Yes | Yes |
اہم امتیازی خصوصیات
- Source-Down dual-side cooled package with 2.0 mΩ RDS(on) at 40 V VDS (بمقابلہISZ072N06NM6ATMA1)
- OptiMOS 6 technology with very low figure-of-merit (بمقابلہISC037N12NM6ATMA1)
- Single-channel low-resistance MOSFET in compact PQFN 3.3x3.3 mm (بمقابلہIQDH35N03LM5SCATMA1)
ڈیزائن نوٹس
Estimated: at ID = 25 A and RDS(on) = 2.0 mΩ, conduction loss is approximately 1.25 W per switch. The PG-WHTFN-9-1 package's Source-Down dual-side cooling requires a thermal pad with at least 6 cm² copper on both top and bottom PCB layers, stitched with a via array of 0.3 mm drill / 0.6 mm pitch. Without this stitching, junction temperature can rise 50 °C above ambient at full load. For high-altitude or sealed enclosures, add a small heatsink or thermal interface material on top of the package for additional dissipation.
Place the gate-drive return path (Kelvin source connection, if available) directly adjacent to the gate pad to minimize gate-loop inductance. Keep the gate-drive trace away from the drain switching node to avoid dv/dt-induced false turn-on. A 10 Ω gate resistor in series with the driver output dampens ringing and limits peak gate current; use a 100 kΩ pull-down on the gate to hold the MOSFET off during controller power-up.
Do not exceed the 40 V VDS rating, even during avalanche events; the part is not designed for repetitive avalanche. Do not operate at VGS below 6 V, where RDS(on) increases sharply and the device operates in the linear region with high dissipation. Do not bypass the gate-source resistor during turn-off - a 10 kΩ minimum resistor prevents ESD-induced turn-on during handling and PCB assembly.
تعمیل کی معلومات
RoHS and lead-free status per Infineon product page. AEC-Q100 qualification not explicitly stated in the verified data; automotive-grade qualification should be confirmed against the latest Infineon datasheet if the design requires it.
