ISC009N06LM5ATMA1 - 60V N-Channel OptiMOS 5 MOSFET | Infineon
MPN: ISC009N06LM5ATMA1 ✓ فعالISC009N06LM5ATMA1 جائزہ
What is a power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to efficiently route or modulate current in power-conversion circuits. OptiMOS 5 is Infineon's fifth-generation 60V-300V trench MOSFET platform, positioned within the broader power MOSFET -> discrete semiconductor -> semiconductor taxonomy. Its hallmark is a 50% lower on-resistance per area versus prior generations, reducing conduction loss in high-current paths.
Key differentiating features include an RDS(on) of 0.9 mOhm max at VGS=10V, an exceptionally low FOM (figure of merit), and an avalanche-rated single-pulse body diode. The PG-TSON-8-3 package exposes a large top-side thermal pad, achieving a junction-to-case thermal resistance (RthJC) well below 1 C/W, which allows direct PCB cooling through copper pours.
Architecturally, the ISC009N06LM5 uses a shielded-gate trench cell structure that minimizes Miller charge (Qg) and gate-drain capacitance, enabling fast switching at high frequencies. According to the Infineon datasheet, the device is optimized for synchronous rectification in switched-mode power supplies (SMPS) where its low Qrr body diode and low Qg keep circulating losses minimal.
Typical applications include high-current synchronous rectification in 48V telecom and server DC-DC converters, OR-ing and hot-swap circuits in server/AI accelerator boards, motor drive half-bridges for industrial automation, USB-PD and high-power battery protection in e-mobility, and solar MPPT power stages. Designers pair this MOSFET with a gate driver such as the Infineon EiceDRIVER 1EDN series for 5V-12V logic-level drive.
When designing with the ISC009N06LM5ATMA1, minimize the high-side source-inductance loop by placing the gate driver and bypass capacitor within 5 mm of the gate and source pins. The exposed pad (PG-TSON-8-3) must be soldered to a copper area of at least 25 mm² on the top layer, with thermal vias connecting to inner ground planes to sustain the 214 W power-dissipation capability.
This page synthesizes distributor pricing from DigiKey, Mouser, LCSC and Arrow, parametric cross-reference alternatives, and practical design notes - an information package not consolidated in the manufacturer datasheet alone.
کے لیے ڈراپ اِن متبادل ISC009N06LM5ATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں ISC009N06LM5ATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), Product Family.
ISC0805NLSATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISC058N04NM5ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC027N06LS5ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC036NE7NS3GATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISC011N03L5SATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC0802NSATMA1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
ISC046N13NM6ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISC009N06LM5ATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 5 |
| Technology | OptiMOS 5 60V N-channel trench MOSFET |
| ٹرانزسٹر کی قسم | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at Ta | 41 A |
| Continuous Drain Current (ID) at Tc | 348 A |
| On-Resistance RDS(on) max at VGS=10V | 0.9 mOhm |
| Power Dissipation at Ta (PD) | 3 W |
| Power Dissipation at Tc (PD) | 214 W |
| آپریٹنگ درجہ حرارت رینج | -55 C to +175 C |
| پیکیج | PG-TSON-8-3 (SuperSO8 5x6) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| RoHS اسٹیٹس | Compliant |
ISC009N06LM5ATMA1 پن کنفیگریشن
| پن 1 | S1 (Source) — Source connection 1 (lowest-inductance Kelvin connection) |
| پن 2 | S2 (Source) — Source connection 2 |
| پن 3 | S3 (Source) — Source connection 3 |
| پن 4 | G (Gate) — Gate drive input - connect via 10-100 ohm gate resistor to driver output |
| پن 5 | S4 (Source) — Source connection 4 |
| پن 6 | S5 (Source) — Source connection 5 |
| پن 7 | S6 (Source) — Source connection 6 |
| پن 8 | S7 (Source) — Source connection 7 |
| پن EP | D (Drain) - Exposed Pad — Drain connection via exposed bottom thermal pad - must be soldered to PCB copper pour for thermal dissipation |
محفوظ آپریٹنگ ایریا (DC continuous)
عام استعمالات
ISC009N06LM5ATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: 48V Telecom & Server Synchronous Rectification, USB-PD & High-Power Battery Protection, Industrial Motor Drive Half-Bridge, Solar MPPT Power Stage, AI Accelerator & GPU VR Stage, Automotive 48V Mild-Hybrid eMobility.
48V Telecom & Server Synchronous Rectification
The ISC009N06LM5ATMA1's 0.9 mOhm RDS(on) and 348 A Tc-rated current make it ideal as the low-side synchronous rectifier in 48V-input to 12V/5V intermediate-bus DC-DC converters used in telecom rectifiers and server/AI-accelerator power rails. The OptiMOS 5 technology reduces conduction loss by ~50% vs OptiMOS 4 at equivalent footprint, directly cutting P_c = I² x RDS(on) in high-current paths. Designers place this MOSFET across the secondary-side inductor return with a 1EDN gate driver, achieving >97% peak efficiency. The 60V VDS rating comfortably exceeds the 48V nominal plus 20% transient overshoot. Thermal performance relies on top-side copper pours of at least 25 mm² plus thermal vias to inner ground planes.
تجویز کردہ
USB-PD & High-Power Battery Protection
In USB-Power-Delivery (PD 3.1) EPR designs delivering 28V/36V/48V at 5A, the ISC009N06LM5ATMA1 functions as the hot-swap and reverse-polarity protection MOSFET. Its 60V VDS rating covers the full PD 3.1 EPR range with margin, while 0.9 mOhm RDS(on) keeps I²R drop under 50 mV at 5A (well within USB-C VTYP cable limits). The PG-TSON-8-3 footprint occupies less than 30 mm² PCB area, enabling compact laptop docking stations. Designers pair this MOSFET with bidirectional current-sense amplifiers for OCP/OVP loops, leveraging the 41 A Ta continuous rating for safe derated operation at the PD's 5A nominal load. Battery-pack BMS modules use it as the high-side disconnect switch with the exposed pad dissipating short-circuit surge events.
تجویز کردہ
Industrial Motor Drive Half-Bridge
The ISC009N06LM5ATMA1 serves as the high-side or low-side switch in 24V/48V industrial BLDC and stepper motor half-bridges used in factory automation, robotics, and CNC equipment. Its 348 A pulse-current capability absorbs motor inrush and back-EMF recovery spikes, while the 60V VDS provides a 25% margin above typical 48V industrial bus voltages. Low Qg (~50 nC typical) enables PWM frequencies up to 100 kHz, reducing audible motor whine and shrinking output-filter inductance. The PG-TSON-8-3's exposed pad allows direct PCB mounting to a heatsink-less copper plane, simplifying mechanical integration in IPM-style modules. Designers implement dead-time insertion of ~100 ns to prevent shoot-through, leveraging the MOSFET's fast body-diode reverse recovery.
تجویز کردہ
Solar MPPT Power Stage
In solar photovoltaic micro-inverters and MPPT charge controllers operating from 30-60V panel strings, the ISC009N06LM5ATMA1 handles the synchronous-rectifier role in the boost-stage or the full-bridge inverter stage. Its ultra-low 0.9 mOhm RDS(on) minimizes conduction loss - critical in solar systems where every percentage point of efficiency translates directly to annual kWh harvest. The device's 175 C maximum junction temperature allows operation in hot rooftop enclosures without active cooling, while the 60V rating tolerates open-circuit voltage transients of 48V panels under cold conditions (Voc rises ~13% at -10C). The exposed top-side pad enables thermal coupling to a heatsink or aluminum enclosure.
تجویز کردہ
AI Accelerator & GPU VR Stage
The ISC009N06LM5ATMA1 is deployed as the synchronous rectifier in the multi-phase buck VR stages powering AI accelerators (e.g. GPU/CPU VCORE) in data-center accelerator cards. With per-phase currents exceeding 80 A peak and 5-8 phases in parallel, the MOSFET's 0.9 mOhm RDS(on) and 348 A Tc rating support the paralleling needed for 500+ A aggregate output. The OptiMOS 5 figure-of-merit (FOM = RDS(on) x Qg) minimizes switching loss at 500 kHz-1 MHz switching frequencies, enabling dense VRMs with minimal inductor size. Thermal management uses the PG-TSON-8-3 exposed pad coupled to multiple thermal vias and a top-side heatsink for sustained load conditions.
تجویز کردہ
Automotive 48V Mild-Hybrid eMobility
The ISC009N06LM5ATMA1 supports 48V mild-hybrid (MHEV) automotive power systems including DC-DC converters bridging 48V to 12V buses, and electric turbo or e-supercharger inverters. Its 60V VDS rating provides margin above the 48V MHEV nominal, while the OptiMOS 5 technology delivers the low conduction loss needed for high-power-density converters under the hood. For AEC-Q100 qualified versions, designers select Infineon's ISC automotive-grade equivalent. The PG-TSON-8-3's small footprint enables integration into compact ECUs and power-distribution units. The exposed top-side pad couples to aluminum housing for passive cooling, surviving the 125 C ambient under-hood temperatures.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا ISC009N06LM5ATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | ISC0805NLSATMA1 | BSC027N06LS5ATMA1 | BSC036NE7NS3GATMA1 | ISC058N04NM5ATMA1 | ISC011N03L5SATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TSON-8-3 (SuperSO8 5x6) | PG-TSON-8-3 - same | PG-TSON-8-3 - same | PG-TSON-8-3 - same | PG-TSON-8-3 - same | PG-TSON-8-3 - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage VDS (V) | 60 V | 60 V | 60 V | 75 V | 40 V | 30 V |
| RDS(on) max at VGS=10V (mOhm) | 0.9 mOhm | 8.0 mOhm | 2.7 mOhm | 3.6 mOhm | 0.58 mOhm | 1.1 mOhm |
| Technology Generation | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Operating Temperature Range | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C |
| RoHS Status | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
اہم امتیازی خصوصیات
- Ultra-low RDS(on) at 60V in PG-TSON-8-3 (بمقابلہISC0805NLSATMA1)
- 60V VDS optimized for 48V telecom/server rails (بمقابلہISC058N04NM5ATMA1 (40V))
- OptiMOS 5 generation FOM optimization (بمقابلہBSC036NE7NS3GATMA1 (OptiMOS 5 75V))
ڈیزائن نوٹس
Estimated: at continuous 348 A (Tc) with 0.9 mOhm RDS(on), conduction loss reaches P = I² x R = 348² x 0.0009 = ~109 W. With the 214 W Tc power-dissipation rating and the PG-TSON-8-3's exposed thermal pad (RthJC below 1 C/W), designers MUST solder the exposed pad to a top-side copper pour of at least 25 mm² and connect that pad to inner ground planes via a 4x4 grid of 0.3 mm thermal vias. Without this, junction temperature will exceed the 175 C limit and trigger thermal shutdown. In multi-phase designs (e.g. 8-phase VR), distribute phases to prevent local hotspot concentration.
Minimize the high-side source-inductance loop by placing the gate-driver bypass capacitor within 5 mm of pins 4 (G) and the source pads. The PG-TSON-8-3 package has multiple source pins (S1-S7) - use them all in parallel to minimize bond-wire inductance. Estimated: every 1 nH of source inductance adds ~10 V of VDS overshoot at 100 A/ns switching speeds. Route the gate-drive trace on an inner layer directly beneath the top-side source pour to provide a return-path capacitance and reduce EMI. Star-ground the gate-driver ground to the source pad, not to the system ground.
Do not exceed VGS = +/-20 V on the gate - static discharge from handling can permanently damage the thin gate oxide. Always use a 10 kohm gate-source resistor for pull-down during power-down to prevent parasitic turn-on from Miller coupling. Estimated: at 0.9 mOhm, even small solder-joint voids can increase thermal resistance by 30% - follow IPC-A-610 acceptance criteria and use X-ray inspection for production. The 60V VDS rating is the absolute maximum - sustained operation at VDS > 48V requires thermal de-rating per the datasheet Diagram 2 SOA curve.
The fast switching edges (rise/fall times <5 ns achievable with this MOSFET) generate EMI from 100 MHz to several GHz. Use a snubber (1 nF + 5 ohm) across the drain-source if the application has high dV/dt sensitivity. Common-mode chokes on the DC bus help pass CISPR 22 / FCC Part 15 conducted emissions. The OptiMOS 5 family's low Qrr body diode reduces reverse-recovery ringing - an EMI benefit over older MOSFET generations. Estimated: with proper layout, EMI below 30 dBuV is achievable for a 48V to 12V/30A design.
تعمیل کی معلومات
RoHS compliant per DigiKey/Infineon product page. AEC-Q100 not qualified in the standard version - select ISC automotive-grade equivalent for vehicular applications. Halogen-free per Infineon material declaration.
