ISZ025N06NM6ATMA1 - 60V 137A OptiMOS 6 N-Channel MOSFET | Infineon
MPN: ISZ025N06NM6ATMA1 ✓ فعالISZ025N06NM6ATMA1 جائزہ
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch that uses an insulated gate to modulate conduction between drain and source. N-channel MOSFETs are the dominant device type in low-voltage synchronous buck converters, motor drives, and battery protection circuits because of their lower on-resistance per unit silicon area compared to P-channel counterparts. The OptiMOS 6 60 V family sits in the voltage regulator -> DC-DC converter -> power management IC hierarchy, targeting high-current point-of-load and OR-ing applications where conduction loss dominates.
Key differentiators include >37% lower RDS(on) and ~25% higher figure-of-merit (FOM, RDS(on) × Qg) versus the previous OptiMOS 5 generation, plus a 100 W power dissipation rating at Tc that enables high-current designs without paralleling devices. The 3.3 V typical gate threshold supports 5 V logic-level drive while still maintaining a safety margin against accidental turn-on. The PG-TSDSON-8-34 package exposes the drain to a top-side thermal pad, reducing PCB loop inductance and improving heat-sinking through the board.
The ISZ025N06NM6 uses Infineon's latest trench MOSFET technology with a soft-switching optimized body diode, reducing ringing in half-bridge topologies. This makes it well-suited to high-frequency telecom and server DC-DC converters where switching losses and reverse-recovery charge directly impact efficiency. The low Qg and Qgd also reduce gate-driver losses and simplify parallel-device designs.
Typical applications include 48 V telecom bus OR-ing and hot-swap controllers, synchronous buck converters in server and datacom VRMs, e-fuse and battery protection in 24 V/48 V industrial systems, motor drive H-bridges, and USB-PD power adapters above 100 W. The wide safe operating area also makes it suitable for solenoid driving and Class-D audio output stages.
When designing with this device, place the gate-driver within 5 mm of the gate pin to minimize parasitic inductance, and use a 10 Ω gate resistor to dampen the miller plateau ringing. The exposed top pad must be soldered to a continuous copper pour of at least 50 mm² for the 100 W dissipation rating to be achievable at Tc = 25 °C.
This page synthesizes distributor pricing, drop-in alternatives from the Site MPN list, and thermal/layout design notes not found in the manufacturer datasheet alone.
کے لیے ڈراپ اِن متبادل ISZ025N06NM6ATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں ISZ025N06NM6ATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, Operating Temperature Range, Product Family, Drain-Source Voltage (VDS).
ISZ072N06NM6ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISC151N08NM6ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISC037N12NM6ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISC015N06NM5ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUC60N04S6L030HATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IQE036N08NM6CGATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISZ025N06NM6ATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 6 60 V |
| Polarity / Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID, Tc=25°C) | 137 A |
| Continuous Drain Current (ID, Ta) | 22 A |
| Maximum RDS(on) at VGS=10V | 2.5 mΩ |
| Gate Threshold Voltage (VGS(th), typ) | 3.3 V |
| Power Dissipation (Ta) | 2.5 W |
| Power Dissipation (Tc) | 100 W |
| پیکیج | PG-TSDSON-8-34 (5x6 mm) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| آپریٹنگ درجہ حرارت رینج | -55 °C to +175 °C |
| Gate Drive Voltage (VGS) | ±20 V max |
| Technology | Trench MOSFET |
| RoHS اسٹیٹس | Compliant |
ISZ025N06NM6ATMA1 پن کنفیگریشن
| پن 1 | Source — Source connection (pin 1) |
| پن 2 | Source — Source connection (pin 2) |
| پن 3 | Source — Source connection (pin 3) |
| پن 4 | Gate — Gate drive input |
| پن 5 | Source — Source connection (pin 5) |
| پن 6 | Source — Source connection (pin 6) |
| پن 7 | Source — Source connection (pin 7) |
| پن 8 | Drain — Drain connection (exposed top-side pad) |
محفوظ آپریٹنگ ایریا (DC, TC=25°C)
عام استعمالات
ISZ025N06NM6ATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: 48 V Telecom OR-ing and Hot-Swap, Server and Datacom Synchronous Buck VRM, Industrial 24 V/48 V e-Fuse and Battery Protection, Automotive 12 V/24 V Motor Drive H-Bridge, High-Wattage USB-PD Power Adapter, Class-D Audio Output Stage.
48 V Telecom OR-ing and Hot-Swap
The ISZ025N06NM6ATMA1 is ideal for 48 V telecom OR-ing and hot-swap controllers where two redundant power supplies feed a common bus. Its 60 V VDS rating provides 12 V headroom above nominal 48 V, while the 2.5 mΩ RDS(on) minimizes steady-state conduction loss at 100 A continuous OR-ing current - dissipating only 25 W versus 50 W for a 5 mΩ part. The OptiMOS 6 soft-switching body diode reduces inrush ringing during hot-swap events. Place the part in series with a hot-swap controller like the LTC4217 and use a 10 Ω gate resistor to dampen the miller plateau; the 137 A TC rating provides 2x headroom over the typical 60 A OR-ing load.
تجویز کردہ
Server and Datacom Synchronous Buck VRM
The ISZ025N06NM6ATMA1 functions as the low-side synchronous rectifier in 48 V-to-PoL buck converters for server and datacom VRMs. Its 2.5 mΩ RDS(on) and 100 W power dissipation at TC enable single-device 80 A continuous output without paralleling, while the low Qg reduces gate-driver losses at 500 kHz switching frequencies. The OptiMOS 6 generation delivers ~25% higher FOM (RDS(on) × Qg) than the previous OptiMOS 5, directly improving VRM efficiency by 0.5-1% at full load. Pair with a digital controller like the XDPE12284C0000XUMA1 and use top-side cooling through the exposed drain pad to maintain TJ below 125 °C at 100 W dissipation.
تجویز کردہ
Industrial 24 V/48 V e-Fuse and Battery Protection
The ISZ025N06NM6ATMA1 excels in industrial 24 V/48 V e-fuse and battery protection circuits where fast disconnect and low conduction loss are both critical. Its 60 V VDS covers the 48 V nominal bus plus transient spikes up to 60 V, while the 137 A TC rating supports 100 A continuous disconnect. The 2.5 mΩ RDS(on) keeps steady-state dissipation at 10 W for a 100 A load, manageable on the standard 40x40 mm PCB footprint. The low Qgd simplifies short-circuit detection by minimizing gate-charge-induced delay; pair with a battery monitor IC and use the gate pin to interrupt current within 5 µs of a fault event.
تجویز کردہ
Automotive 12 V/24 V Motor Drive H-Bridge
The ISZ025N06NM6ATMA1 operates in 12 V/24 V automotive H-bridge motor drive topologies where its 60 V VDS comfortably handles the load-dump transient up to 35 V per ISO 7637-2. The 137 A TC rating supports peak motor inrush currents above 300 A for 100 ms without exceeding the SOA, and the 2.5 mΩ RDS(on) reduces H-bridge conduction loss by 40% versus typical 4 mΩ automotive MOSFETs. Use paired N-channel ISZ025N06NM6ATMA1 devices on both high and low sides with a half-bridge gate driver like the IR2304SPBF; the OptiMOS 6 soft body diode eliminates the need for an external anti-parallel diode in most 24 V motor applications.
تجویز کردہ
High-Wattage USB-PD Power Adapter
The ISZ025N06NM6ATMA1 functions as the primary-side switch in high-wattage 100 W-240 W USB-PD adapters using 2-stage PFC + LLC topologies. Its 60 V VDS provides ample margin for the 48 V PFC bulk voltage, and the 2.5 mΩ RDS(on) at 100 kHz switching minimizes primary-side conduction loss. The 137 A TC rating supports the 4-5 A primary RMS current typical of 240 W adapters with significant design margin. Pair with a wide-bandgap GaN device on the secondary side for highest efficiency; the OptiMOS 6 generation's soft-switching optimization complements resonant LLC waveforms for EMI compliance.
تجویز کردہ
Class-D Audio Output Stage
The ISZ025N06NM6ATMA1 drives the output stage of high-power Class-D audio amplifiers where its low RDS(on) and high current rating directly improve damping factor and THD. The 2.5 mΩ RDS(on) in the output H-bridge reduces conduction loss to 1% of audio power at 4 Ω, while the 137 A peak current supports 1 kW amplifier designs. The OptiMOS 6 family's body-diode softness reduces dead-time distortion, a key parameter for audiophile-grade Class-D designs. Pair with a dedicated Class-D controller and use a 5 Ω gate resistor to control switching-edge dV/dt for EMI compliance; the exposed drain pad enables direct heatsink attachment for the high-power audio application.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا ISZ025N06NM6ATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | ISZ072N06NM6ATMA1 | ISC151N08NM6ATMA1 | ISC037N12NM6ATMA1 | ISC015N06NM5ATMA1 | IAUC60N04S6L030HATMA1 | IQE036N08NM6CGATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TSDSON-8-34 (5x6 mm) | PG-TSDSON-8-34 (same) | PG-TSDSON-8-34 (same) | PG-TSDSON-8-34 (same) | PG-TSDSON-8-34 (same) | PG-TSDSON-8-34 (same) | PG-TSDSON-8-34 (same) |
| Drain-Source Voltage (VDS) | 60 V | 60 V | 80 V | 120 V | 60 V | 40 V | 80 V |
| Maximum RDS(on) at VGS=10V | 2.5 mΩ | 7.2 mΩ | 1.51 mΩ | 3.7 mΩ | 1.5 mΩ | 3 mΩ | 3.6 mΩ |
| Technology Generation | OptiMOS 6 (latest) | OptiMOS 6 | OptiMOS 6 | OptiMOS 6 | OptiMOS 5 (previous) | OptiMOS 6 | OptiMOS 6 |
| Gate Threshold Voltage (VGS(th), typ) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| Primary Application Focus | Lowest RDS(on) conduction-loss OR-ing | Switching-frequency optimized | Higher VDS headroom | 120 V bus applications | Legacy / cost-sensitive | 24 V automotive | Soft-switching telecom |
اہم امتیازی خصوصیات
- Lowest RDS(on) in the Infineon OptiMOS 6 60 V portfolio (بمقابلہISZ072N06NM6ATMA1)
- Latest-generation OptiMOS 6 process technology (بمقابلہISC015N06NM5ATMA1)
- 60 V VDS rating optimized for 48 V telecom/industrial buses (بمقابلہISC037N12NM6ATMA1)
ڈیزائن نوٹس
Estimated: at continuous drain current of 100 A and RDS(on) of 2.5 mΩ, steady-state conduction loss is approximately 25 W. Using the standard 40x40 mm FR4 PCB with 6 cm² copper drain pour, the thermal resistance junction-to-ambient is approximately 50 °C/W (per Infineon datasheet test conditions), resulting in a junction temperature rise of ~125 °C above ambient - exceeding the 175 °C maximum. For sustained 100 A operation, use a forced-air cooled heatsink or increase the copper pour to 20 cm² minimum to keep TJ below 125 °C.
The exposed top-side drain pad must be soldered to a continuous PCB copper pour of at least 50 mm² for the 100 W dissipation rating to be achievable at TC = 25 °C. Use multiple thermal vias (0.3 mm diameter, 1.2 mm pitch) to connect the top drain pad to internal ground planes. The gate trace should be routed as a short, straight path of <5 mm length with a 10 Ω series damping resistor placed within 2 mm of the gate pin to suppress miller-plateau ringing and parasitic oscillation.
Do not exceed ±20 V on the gate pin; transients beyond this rating will rupture the gate oxide. The body diode is rated for forward current up to half the continuous drain rating - do not use it as a primary freewheeling path in continuous conduction applications. Avoid operating in the linear region (VDS between 1 V and full VDS) for extended durations; this falls outside the SOA curve and can cause thermal runaway. Always check the datasheet Diagram 2 for TC-based current derating above 25 °C.
تعمیل کی معلومات
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified; for automotive applications use the IAUC60N04S6L030HATMA1 or another AEC-Q100-qualified variant.
