2ED2103S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon
MPN: 2ED2103S06FXUMA1 ✓ Hoạt động2ED2103S06FXUMA1 Tóm tắt
A half-bridge gate driver is a power management semiconductor that produces two complementary gate-drive signals from a single logic-level PWM input, isolating the low-voltage controller from the high-voltage switching node while delivering the high peak currents required to rapidly charge and discharge the power-transistor gate capacitances. Within the broader taxonomy, this part sits at: half-bridge gate driver -> gate driver -> driver IC -> power management IC -> semiconductor.
Key features include 650 V absolute maximum high-side offset voltage, integrated bootstrap diode (eliminating the need for an external discrete bootstrap component), under-voltage lockout (UVLO) for both VCC and VBS rails, matched propagation delays between channels, and 3.3 V/5 V logic-compatible inputs. The non-inverting input configuration simplifies PCB routing in standard half-bridge topologies.
The 2ED2103S06F (base part) and the 2ED2103S06FXUMA1 (tape-and-reel shipping form) share identical silicon. Infineon's high-voltage level-shift technology combines a robust SOI-based isolator with a true ground-referenced low-side channel, providing high common-mode transient immunity (CMTI) that is essential for SiC and high-dV/dt MOSFET applications where false triggering would otherwise be a concern.
Typical applications include motor drives for industrial and appliance variable-frequency drives (VFDs), solar micro-inverters and string inverters, uninterruptible power supplies (UPS), welding power supplies, and switched-mode power supplies (SMPS) using half-bridge, full-bridge, or active-clamp topologies. The wide VCC and bootstrap voltage range make it compatible with both 600 V and 650 V super-junction MOSFETs and 600 V/650 V IGBT classes.
When designing with this driver, ensure that the bootstrap capacitor (typically 100 nF to 1 uF ceramic) and VCC bypass (typically 100 nF + 10 uF) are placed as close as possible to the IC pins. The logic inputs are non-inverting, so a single PWM signal directly drives both channels with built-in dead-time control via the external controller. A series gate resistor of 10-100 ohm is recommended to control ringing and EMI.
This page synthesizes distributor pricing, drop-in same-package alternatives, and practical design notes not found in the manufacturer datasheet alone.
Bộ thay thế dễ dàng lắp đặt cho 2ED2103S06FXUMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với 2ED2103S06FXUMA1 (cùng hình factor và footprint) — khác nhau ở Package, RoHS Status, Configuration, Function, Input Logic Compatibility.
2ED2104S06F
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
2ED21064S06JXUMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →2EDL8034G4CXTMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →2EDL6014ACG2DXTMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →2EDN7533RXTMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →2EDB7259KXUMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IR2104SPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →2ED2103S06FXUMA1 Tỷ lệ tối đa & tính chất điện
| Chức năng | Half-Bridge Gate Driver |
| Configuration | Non-Inverting |
| Technology | High-Voltage Level Shift (SOI) |
| Number of Drivers | 2 (high-side + low-side) |
| Driven Device Type | IGBT, N-Channel MOSFET |
| High-Side Offset Voltage (Max) | 650 V |
| Bootstrap Voltage (Max) | 675 V |
| Supply Voltage (VCC) | 10 V to 20 V |
| Source Current (typ.) | 0.29 A |
| Sink Current (typ.) | 0.7 A |
| Bootstrap Diode | Integrated |
| Logic Input Compatibility | 3.3 V / 5 V |
| Under-Voltage Lockout (UVLO) | Yes (VCC and VBS) |
| Hộp | PG-DSO-8-69 (DSO-8 with exposed pad) |
| Kiểu lắp đặt | Surface Mount |
| Khoảng nhiệt độ hoạt động | -40C to +125C |
| Trạng thái RoHS | Compliant |
Cấu hình chân 2ED2103S06FXUMA1
| Chân 1 | VCC — Logic and low-side supply (10 V to 20 V) |
| Chân 2 | IN — Non-inverting logic input (3.3 V / 5 V compatible) |
| Chân 3 | GND — Logic and low-side ground reference |
| Chân 4 | NC — Not connected (or exposed pad GND on some package revisions) |
| Chân 5 | LO — Low-side gate-drive output (0.29 A source / 0.7 A sink) |
| Chân 6 | VS — High-side floating supply return / phase node |
| Chân 7 | HO — High-side gate-drive output |
| Chân 8 | VB — Bootstrap supply for high-side driver |
Ứng dụng tiêu biểu
2ED2103S06FXUMA1 phù hợp cho 7 Áp dụngs: Industrial Motor Drives (VFDs), Solar Micro-Inverters and String Inverters, Uninterruptible Power Supplies (UPS), Welding and Plasma Cutting Power Supplies, Switched-Mode Power Supplies (SMPS), EV Charging Stations and Bidirectional EVSE, Drones and Aerospace Power Converters.
Industrial Motor Drives (VFDs)
The 2ED2103S06FXUMA1 is ideally suited for variable-frequency drives (VFDs) controlling three-phase induction motors and PMSM motors up to 7.5 kW. Its 650 V high-side offset voltage exceeds the 540 V DC bus typically found in 400 V AC industrial systems, providing robust margin for back-EMF transients and short-circuit events. The integrated bootstrap diode reduces BOM cost and PCB footprint in the half-bridge stage, while 0.7 A sink current delivers fast turn-off to limit switching losses at 20 kHz PWM. Place the driver adjacent to the half-bridge MOSFETs (e.g., Infineon IPD65R380E6 or IPD50N06S409) with 100 nF VCC bypass and 1 uF bootstrap capacitors. Compared to bootstrap-diode-less drivers, the integrated diode saves one component per phase and eliminates a high-voltage discrete layout trace.
Được đề xuất
Solar Micro-Inverters and String Inverters
For solar micro-inverters (typically 250-600 W) and string inverters (1-10 kW), the 2ED2103S06FXUMA1 provides half-bridge drive for the DC-AC converter stage operating from a 390 V DC bus. Its 650 V rating gives 25% derating margin over the worst-case 600 V super-junction MOSFET drain voltage, enabling long-term reliability. The non-inverting input accepts 3.3 V PWM directly from digital controllers like the EiceMC or ARM Cortex-M microcontrollers commonly used in solar inverters. The integrated bootstrap diode eliminates a high-side discrete, reducing PCB area by ~10% and improving manufacturability. Compared to discrete gate-drive optocoupler + bootstrap designs, the 2ED2103S06F halves the gate-drive component count and improves CMTI for SiC MOSFET compatibility.
Được đề xuất
Uninterruptible Power Supplies (UPS)
Online UPS systems rated 1-10 kVA use a half-bridge or full-bridge inverter stage to synthesize 230 V AC from a 384 V DC bus, where the 2ED2103S06FXUMA1 drives the IGBT or MOSFET power transistors. Its UVLO protection on both VCC and VBS rails prevents the half-bridge from operating below the safe gate-drive threshold, eliminating shoot-through and false triggering during battery deep-discharge recovery. The matched propagation delay between channels ensures symmetric high-side / low-side switching, limiting DC-bias current in the output transformer. Compared to discrete high-voltage gate driver optocouplers, the 2ED2103S06F provides integrated protection and reduces assembly cost for high-volume UPS production.
Được đề xuất
Welding and Plasma Cutting Power Supplies
Welding inverters require robust gate drivers capable of operating at high switching frequencies (20-100 kHz) in harsh industrial environments with high dV/dt. The 2ED2103S06FXUMA1's SOI-based level-shift technology provides high common-mode transient immunity, critical when the half-bridge switches 600 V MOSFETs at 50 V/ns. The integrated bootstrap diode ensures reliable high-side drive despite the wide duty-cycle range typical in welding primary-side control. Compared to optocoupler-based drive circuits, the 2ED2103S06F offers 10x higher CMTI and eliminates the optocoupler aging problem common in high-temperature industrial installations.
Được đề xuất
Switched-Mode Power Supplies (SMPS)
Half-bridge SMPS topologies used in server, telecom, and industrial DC-DC converters benefit from the 2ED2103S06FXUMA1's integrated bootstrap diode and 650 V rating. In LLC or phase-shifted full-bridge converters operating from a 400 V bus, the driver provides matched timing and high noise immunity. Its 8-pin PG-DSO-8-69 footprint fits in compact 1-3 kW SMPS designs where PCB area is constrained. Compared to bootstrap-diode-less drivers requiring a high-voltage discrete, the 2ED2103S06F saves a component and a placement site, lowering both BOM cost and assembly time.
Được đề xuất
EV Charging Stations and Bidirectional EVSE
Level 2 EV charging stations (3.7-22 kW) and bidirectional onboard chargers use half-bridge power stages requiring high-side gate drivers rated above 600 V. The 2ED2103S06FXUMA1 drives the primary-side MOSFETs of the totem-pole PFC and the DC-DC stage in a 400 V EV system. Its integrated bootstrap diode simplifies the high-density layout required for compact wall-mounted EVSE designs. Compared to drivers without an integrated bootstrap diode, the 2ED2103S06F reduces the BOM count by 5-6 components per charging module, an important factor in cost-sensitive automotive electrification.
Được đề xuất
Drones and Aerospace Power Converters
Compact drone ESCs and aerospace power converters operating from high-voltage Li-ion battery packs (6S-12S, up to 50.4 V DC) can use half-bridge topologies where the 2ED2103S06FXUMA1 provides robust gate drive with high CMTI. Although the part is rated to 650 V (over-spec for a 50 V system), its small PG-DSO-8-69 footprint and integrated bootstrap diode are valued in weight- and area-constrained drone designs. Compared to discrete high-voltage gate drivers, the 2ED2103S06F reduces mass and PCB area by approximately 15-20%.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho 2ED2103S06FXUMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | 2ED2104S06F | 2ED21064S06JXUMA1 | 2EDL8034G4CXTMA1 | 2EDL6014ACG2DXTMA1 | IR2104SPBF |
|---|---|---|---|---|---|---|
| Package | PG-DSO-8-69 | PG-DSO-8-69 - same | PG-DSO-8-69 - same | DSO-8 - same footprint family | DSO-8 - same footprint family | SOIC-8 - same footprint family |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Bootstrap Diode | Integrated | Integrated | Integrated | Integrated | Integrated | Not integrated (external required) |
| Logic Input Compatibility | 3.3 V / 5 V | 3.3 V / 5 V | 3.3 V / 5 V | 3.3 V / 5 V | 3.3 V / 5 V | 3.3 V / 5 V |
Bảo phân biệt quan trọng
- Integrated bootstrap diode eliminates one external component per phase (vsIR2104SPBF)
- Higher voltage rating (650 V vs 600 V) (vs2ED21064S06JXUMA1 / IR2104SPBF)
- Stronger sink current for faster turn-off (vs2ED2104S06F (lower sink variant))
Ghi chú thiết kế
Bootstrap capacitor sizing: choose Cboot >= Qg_total / (delta_Vboot_max - Vf_bootstrap). Estimated: for a 100 nC Qg MOSFET and a 200 mV allowable drop, Cboot >= 100 nC / 0.2 V = 500 nF. A 1 uF ceramic (X7R, 25 V) placed within 5 mm of pins VB and VS provides robust margin. A 100 nF X7R + 10 uF aluminum polymer combination is recommended for high-side drive in 600 V / 650 V half-bridge stages above 20 kHz.
Although the 2ED2103S06F's quiescent current is low (~100 uA typ.), PCB thermal management is critical because the exposed pad (pin 4 / EP) is the primary heatsink path. Solder the exposed pad to a top-layer copper pour of at least 50 mm x 50 mm with thermal vias (0.3 mm drill, 1 mm pitch) connecting to a bottom-layer ground plane. Estimated: theta_JA drops from ~120 C/W (no exposed pad soldered) to ~50 C/W (proper EP soldering), sufficient for full 20 V VCC operation at +125 C ambient.
Layout for CMTI robustness: keep the high-side loop (HO-VS-VB-Cboot) tight (< 5 mm perimeter) and isolated from the logic ground return by at least 2 mm. The VCC and VBS bypass capacitors must be placed within 3 mm of their respective pins. Place the driver within 20 mm of the MOSFETs it drives to minimize gate-loop inductance; use 10-22 ohm gate-source resistors to damp ringing. Per Infineon EiceDRIVER application notes, this layout supports >50 V/ns dV/dt at 650 V with no false triggering.
Common pitfalls when using the 2ED2103S06F: (1) Forgetting the bootstrap capacitor on initial power-up, which leaves the high-side output floating and can destroy the upper MOSFET. (2) Driving an input below the VCC UVLO threshold during startup. (3) Using a standard SOIC-8 land pattern with the PG-DSO-8-69 exposed pad, which leaves the EP unsoldered and degrades thermal performance. (4) Allowing VS to swing below -0.7 V when the low-side turns on hard, which can forward-bias the internal high-side body. Add a small Schottky diode across VS to GND if VS undershoot is a concern.
Thông tin tuân thủ
RoHS compliance confirmed per Infineon product page. AEC-Q100 not qualified for this part; for automotive designs consider AEC-Q100 qualified members of the 2ED family. REACH compliant. Halogen-free status not explicitly stated - see [DATA_NEEDED] in compliance field.
