IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
MPN: IQEH50NE2LM7ZCGATMA1 ✓ Hoạt độngIQEH50NE2LM7ZCGATMA1 Tóm tắt
An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switching device that conducts current between drain and source when a positive gate-source voltage exceeds the threshold. Within the broader semiconductor taxonomy, a power MOSFET belongs to the discrete power device family alongside IGBTs and thyristors, and it serves as the fundamental building block of synchronous rectification, hot-swap, and load-switch stages. The OptiMOS 7 generation from Infineon is the company's 25 V and 40 V logic-level optimized family targeting AI server, telecom, and high-density computing power rails.
The IQEH50NE2LM7ZCGATMA1's headline features are its extremely low 0.5 mOhm maximum on-resistance, 422 A continuous drain current at case, and +175 degrees C operating junction temperature. These specifications enable very low conduction losses in high-current synchronous-rectifier and OR-ing applications, while the elevated temperature rating provides extra margin for hot-spot-tolerant designs. Infineon's OptiMOS 7 technology also delivers improved switching figures of merit versus prior generations, allowing higher switching frequencies with reduced gate-drive losses.
Architecturally, the device uses a trench-gate silicon structure optimized for 25 V breakdown class, with the source and gate bondable from the top side and the drain exposed through the package's thermal pad. The PG-TTFN-9-3 (Infineon Thin-package Topside-Flat No-lead) footprint provides Kelvin-source connection options that minimize gate-loop inductance, an important consideration when the MOSFET is operated at high di/dt in 48 V-to-PoL conversion stages for AI processors.
Typical applications include AI server 48 V intermediate bus converters, OR-ing and hot-swap controllers in redundant telecom rectifiers, synchronous-rectifier stages for telecom DC-DC bricks, e-mobility auxiliary 24 V/12 V power rails, and high-current USB-PD source switches. The combination of 25 V rating and 0.5 mOhm Rds(on) is particularly well-matched to point-of-load stages that step down 12 V or 5 V intermediate rails directly at the processor socket.
When designing with this device, pay attention to PCB layout for the gate-drive loop: keep the gate-driver IC as close as possible to the gate and Kelvin-source pins to minimize parasitic inductance and ringing. Thermal management is critical at high current - use generous copper pours on the drain pad and, when possible, a multi-layer PCB with thermal vias to spread heat into inner copper planes.
This page synthesizes distributor pricing, drop-in OptiMOS 7 alternatives, and practical design notes not found in the manufacturer datasheet alone.
Bộ thay thế dễ dàng lắp đặt cho IQEH50NE2LM7ZCGATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IQEH50NE2LM7ZCGATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), Product Family.
IQEH50NE2LM7UCGSCATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IQEH54NE2LM7UCGATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IQEH68NE2LM7UCGATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IQEH50NE2LM7ZCGATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor |
| Polarity / Channel Type | N-Channel |
| Drain-Source Voltage (Vds) Max | 25 V |
| Continuous Drain Current (Ta) | 54 A |
| Continuous Drain Current (Tc) | 422 A |
| Maximum On-Resistance (Rds(on)) | 0.5 mOhm |
| Gate Threshold Voltage (Vgs(th)) | 1.7 V |
| Power Dissipation (Ta) | 2.5 W |
| Power Dissipation (Tc) | 150 W |
| Maximum Junction Temperature | +175 degrees C |
| Khoảng nhiệt độ hoạt động | -55 degrees C to +175 degrees C |
| Hộp | PG-TTFN-9-3 |
| Kiểu lắp đặt | Surface Mount |
| Technology | OptiMOS 7 (Trench-Gate) |
| Trạng thái RoHS | Compliant |
| Qualification | Industrial grade per Infineon datasheet |
Cấu hình chân IQEH50NE2LM7ZCGATMA1
| Chân 1 | Gate — Gate drive input; logic-level threshold ~1.7 V |
| Chân 2 | Kelvin Source — Kelvin-source connection for gate return; minimizes gate-loop inductance |
| Chân 3 | Source — Source pad (electrical) |
| Chân 4 | Source — Source pad (electrical) |
| Chân 5 | Source — Source pad (electrical) |
| Chân 6 | Drain — Drain thermal/electrical pad |
| Chân 7 | Drain — Drain thermal/electrical pad |
| Chân 8 | Drain — Drain thermal/electrical pad |
| Chân 9 | Drain — Drain thermal/electrical pad |
Khu vực hoạt động an toàn (DC)
Ứng dụng tiêu biểu
IQEH50NE2LM7ZCGATMA1 phù hợp cho 6 Áp dụngs: AI Server 48V Intermediate Bus Converter, Synchronous Rectifier in 12V DC-DC Buck, Telecom Hot-Swap and OR-ing Controller, USB-PD Source Power Switch, E-Mobility 12V/24V Auxiliary Rail, Robotics and Industrial Motor Drive H-Bridge.
AI Server 48V Intermediate Bus Converter
The IQEH50NE2LM7ZCGATMA1 fits AI server 48 V-to-12 V intermediate bus converter (IBC) stages where 25 V OptiMOS 7 parts are commonly deployed. Its 25 V Vds rating provides comfortable headroom on the 12 V secondary side, while the 0.5 mOhm max Rds(on) and 422 A Tc rating deliver low conduction loss at the high currents typical of GPU/CPU power-delivery networks. The PG-TTFN-9-3 Kelvin-source connection minimizes gate-loop inductance, which is critical when the MOSFET is switched at high di/dt in multi-megahertz resonant or hard-switched topologies. Compared with a 40 V part, the 25 V silicon achieves lower Rds(on) per unit area, which improves power density on the secondary-side synchronous rectifier. Designers should pair the part with a dedicated gate-driver IC placed within 5 mm of the gate pad to exploit the Kelvin-source benefit fully.
Được đề xuất
Synchronous Rectifier in 12V DC-DC Buck
The IQEH50NE2LM7ZCGATMA1 is well-matched as the low-side synchronous FET in 12 V input buck converters that step down to 1 V or below for processor cores. Its 0.5 mOhm max Rds(on) keeps I-squared-R conduction loss minimal even at continuous currents above 50 A, while the 25 V drain-source rating provides more than double the headroom required for 12 V rails. The OptiMOS 7 trench-gate structure also delivers improved switching figures of merit versus prior generations, allowing higher switching frequencies that shrink the output inductor. In a typical 12 V-to-1 V 50 A buck, using the IQEH50NE2LM7ZCGATMA1 on the low side and a 40 V control FET on the high side yields >96% peak efficiency. The exposed-drain PG-TTFN-9-3 pad also serves as the primary thermal path, so use extensive copper and thermal vias.
Được đề xuất
Telecom Hot-Swap and OR-ing Controller
The IQEH50NE2LM7ZCGATMA1 handles the -48 V rectifier OR-ing and 12 V/24 V hot-swap MOSFET role in redundant telecom power shelves where low Rds(on) directly translates to lower voltage drop and heat dissipation. Its 422 A Tc rating gives tremendous design margin even when the OR-ing FET continuously carries 100-200 A in a 12 V distribution bus. The PG-TTFN-9-3 footprint is well-suited to the high-current PCB copper pours typical of telecom backplane designs, and the Kelvin-source option allows clean gate control during fast hot-plug events. Infineon OptiMOS 7 parts are widely used in this segment because of their proven long-term reliability at +175 degrees C junction. Add a TVS across drain-source to absorb transients during hot-plug inductance ringing.
Được đề xuất
USB-PD Source Power Switch
The IQEH50NE2LM7ZCGATMA1 is well-suited to high-current USB-PD source-side power-path switches that need to carry 5 A, 20 V EPR (Extended Power Range) without significant voltage drop or heat rise. Its 0.5 mOhm Rds(on) results in only 25 mV drop at 5 A and ~63 mV at the EPR 36 W level, well within USB-PD cable voltage-tolerance budgets. The 25 V Vds rating covers 20 V EPR outputs with adequate transient margin, and the small PG-TTFN-9-3 footprint fits inside space-constrained USB-C charger housings. For EPR designs above 28 V, evaluate a higher-voltage OptiMOS 7 part instead. Pair with a USB-PD controller such as Infineon's EZ-PD family for a complete Type-C source solution.
Được đề xuất
E-Mobility 12V/24V Auxiliary Rail
The IQEH50NE2LM7ZCGATMA1 fits 12 V and 24 V auxiliary rails in mild-hybrid and battery-electric vehicles where low conduction loss and small PCB footprint matter. The 25 V Vds rating covers 24 V battery transients when paired with a TVS clamp, while the 0.5 mOhm Rds(on) keeps voltage drop and dissipation minimal at typical 30-60 A accessory loads (lighting, infotainment, body controllers). Although the part is industrial grade rather than AEC-Q101 automotive qualified, designers often use OptiMOS 7 25 V parts in non-safety auxiliary applications. The PG-TTFN-9-3's top-side cooling path simplifies heatsink attachment on modules behind the dashboard. For safety-critical or AEC-Q100-required rails, select an Infineon automotive-grade OptiMOS 7 variant.
Được đề xuất
Robotics and Industrial Motor Drive H-Bridge
The IQEH50NE2LM7ZCGATMA1 is suitable as the switching element in low-voltage H-bridge motor drives for robotics, AGVs, and small industrial servo amplifiers operating on 12 V or 24 V rails. Its 0.5 mOhm Rds(on) and 422 A peak rating enable high-torque PWM drive at low duty-cycle losses, and the 25 V Vds class covers 24 V industrial bus transients. The PG-TTFN-9-3 Kelvin-source pin simplifies gate-drive layout for the high-side FET in a bootstrap configuration. Designers should add gate-source resistors of 10-100 ohm to dampen ringing during the fast PWM transitions common at 20-50 kHz. The +175 degrees C junction rating also gives extra margin in the enclosed motor-drive enclosures common in robotics.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IQEH50NE2LM7ZCGATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IQEH50NE2LM7UCGSCATMA1 | IQEH54NE2LM7UCGATMA1 | IQEH68NE2LM7UCGATMA1 |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TTFN-9-3 | PG-TTFN-9-3 (same) | PG-TTFN-9-3 (same) | PG-TTFN-9-3 (same) |
| Vds Max | 25 V | 25 V | 25 V | 25 V |
| Continuous Drain Current (Tc) | 422 A | ~422 A (same die) | Higher bin | Highest bin |
| Rds(on) Max | 0.5 mOhm | ~0.5 mOhm (different bin/test) | ~0.55 mOhm (+10%) | ~0.6 mOhm (+20%) |
| Continuous Drain Current (Ta) | 54 A | 54 A | 54 A | 68 A |
| Gate Threshold Vgs(th) | 1.7 V | 1.7 V | 1.7 V | 1.7 V |
| Power Dissipation (Tc) | 150 W | 150 W | 150 W | 150 W |
Bảo phân biệt quan trọng
- Very low 0.5 mOhm max Rds(on) in compact PG-TTFN-9-3 (vsIQEH54NE2LM7UCGATMA1)
- Top-bin current handling versus sibling OptiMOS 7 parts (vsIQEH68NE2LM7UCGATMA1)
- Infineon OptiMOS 7 technology positioning for AI server power (vsNon-Infineon 25 V MOSFETs)
Ghi chú thiết kế
Estimated: At 200 A continuous load and 0.5 mOhm Rds(on), the IQEH50NE2LM7ZCGATMA1 dissipates approximately I-squared-R = 200 x 200 x 0.0005 = 20 W. To keep the junction below +150 degrees C with a +85 degrees C ambient, the thermal resistance from junction to case must remain below (150-85)/20 = 3.25 degrees C/W, which the PG-TTFN-9-3 footprint can achieve only with substantial PCB copper and forced cooling. Use a multi-layer PCB with thermal vias under the drain pad and connect the Kelvin-source pad back to the controller ground plane with a wide trace to avoid raising source inductance.
Minimize gate-loop inductance by placing the gate-driver IC within 5 mm of the gate pad and connecting the gate-driver ground return directly to the Kelvin-source pin. Use a 10-100 ohm gate-source resistor close to the gate pin to dampen ringing. The high-current drain path should use multiple top-layer copper pours stitched together with thermal vias to inner ground planes. Keep the switching-node copper area small to reduce EMI radiated emissions.
Do not exceed the +175 degrees C maximum junction temperature rating even though OptiMOS 7 silicon is robust - sustained operation above 150 degrees C accelerates solder-joint fatigue. Ensure the Vgs gate-drive voltage stays within the datasheet-recommended range; under-driven gates cause the part to operate in the linear region and overheat. Verify the gate-driver can source and sink the required Qg at the desired switching frequency without excessive ringing. Finally, always include a TVS or snubber across drain-source if the application includes significant inductive transients.
Thông tin tuân thủ
RoHS and REACH compliance confirmed via Infineon product page and DigiKey listing. Halogen-free status not explicitly stated in verified data. Industrial-grade qualification; for AEC-Q100 automotive requirements, choose an automotive-grade OptiMOS 7 variant.
