BSZ017NE2LS5IATMA1 - 25V OptiMOS 5 N-FET, 1.7mΩ TSDSON-8
MPN: BSZ017NE2LS5IATMA1 ✓ Hoạt độngBSZ017NE2LS5IATMA1 Tóm tắt
A power MOSFET is a voltage-controlled semiconductor switch that modulates current flow between its drain and source terminals in response to a gate-source voltage. Modern N-channel trench MOSFETs such as OptiMOS 5 sit within the broader taxonomy of discrete power semiconductors (MOSFET > transistor > discrete semiconductor), and are the dominant switching element in synchronous buck converters, motor drives, hot-swap controllers, and OR-ing circuits where ultra-low RDS(on) and small package footprint are mandatory. Infineon's OptiMOS 5 generation targets highest power density and energy efficiency in both standby and full-operation regimes.
Key features include RDS(on) of 1.7 mΩ @ VGS=10V, ±16V VGS rating, gate charge of 30 nC @ VGS=10V, and input capacitance of 2000 pF @ VDS=12V. The threshold voltage of 2V @ 250µA simplifies logic-level interfacing, and the TSDSON-8-FL package exposes the die for direct PCB heatsinking. Compared with older OptiMOS 3/4 generations, this part delivers a figure-of-merit reduction that enables higher switching frequencies without exceeding thermal limits.
Typical applications include high-current DC-DC synchronous buck converters, USB Power Delivery (PD) and QuickCharge adapters, hot-swap and OR-ing circuits on 12V/20V distribution rails, e-fuse and battery protection FETs in 1S-3S lithium-ion packs, motor drive half-bridges in robotics and e-bikes, and Class-D audio amplifier output stages. The 1.7 mΩ on-resistance keeps conduction losses below 1% even at 20A, supporting high-efficiency 25V point-of-load designs.
When designing with this part, observe the ±16V absolute maximum VGS rating and avoid exceeding 12V VGS in normal operation to prevent oxide stress. The exposed pad must be soldered to a sufficiently large copper pour (at least 50 mm² on a 1 oz board) to keep the junction within thermal limits at 40A pulses. Place the gate-drive resistor as close as possible to pin 1 to suppress parasitic turn-on.
Bộ thay thế dễ dàng lắp đặt cho BSZ017NE2LS5IATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với BSZ017NE2LS5IATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Operating Temperature Range, Technology, Drain-Source Voltage (VDS), Operating Junction Temperature.
BSZ036NE2LSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC018N04LSGATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC014N04LSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPB027N10N3GATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC097N06NSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC110N12NM6ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSZ017NE2LS5IATMA1 Tỷ lệ tối đa & tính chất điện
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 25 V |
| Continuous Drain Current (TA) | 27 A |
| Continuous Drain Current (TC) | 40 A |
| On-Resistance RDS(on) @ VGS=10V | 1.7 mΩ |
| On-Resistance Test Current | 20 A |
| Gate-Source Voltage (VGS) Rating | ±16 V |
| Gate Threshold Voltage VGS(th) | 2 V @ 250 µA |
| Total Gate Charge Qg | 30 nC @ VGS=10V |
| Input Capacitance Ciss | 2000 pF @ VDS=12V |
| Power Dissipation (TA) | 2.1 W |
| Power Dissipation (TC) | 50 W |
| Nhiệt độ mối nối hoạt động | -55°C to +150°C |
| Hộp | PG-TSDSON-8-FL (8-PowerTDFN) |
| Kiểu lắp đặt | Surface Mount |
| Series / Family | OptiMOS 5 25V |
| Trạng thái RoHS | Compliant |
Cấu hình chân BSZ017NE2LS5IATMA1
| Chân 1 | Gate — Gate drive input; ±16V VGS absolute max |
| Chân 2 | Source — Source connection, internally bonded to pins 3 and 8 |
| Chân 3 | Source — Source connection |
| Chân 4 | Drain — Drain connection (electrically common with exposed pad) |
| Chân 5 | Drain — Drain connection |
| Chân 6 | Drain — Drain connection |
| Chân 7 | Drain — Drain connection |
| Chân 8 | Source — Source connection |
Khu vực hoạt động an toàn (DC)
Ứng dụng tiêu biểu
BSZ017NE2LS5IATMA1 phù hợp cho 7 Áp dụngs: Synchronous Buck DC-DC Converters, USB Power Delivery (PD) Fast Chargers, Hot-Swap and OR-ing Controllers (12V/20V Rails), Battery Protection (1S-3S Lithium-Ion Packs), BLDC Motor Drive Half-Bridges (Robotics, E-Bikes), Class-D Audio Amplifier Output Stages, E-Fuse and Inrush Current Limiters.
Synchronous Buck DC-DC Converters
The BSZ017NE2LS5IATMA1 excels as the low-side synchronous rectifier in 12V-input buck converters delivering 20-40A to point-of-load rails. Its 1.7 mΩ RDS(on) at VGS=10V keeps conduction losses under 1W at full load, supporting >97% peak efficiency at 500 kHz switching. The 2000 pF Ciss and 30 nC Qg permit fast transition times with a low-side gate driver such as the 1EDN7511B, and the TSDSON-8 exposed pad enables direct PCB heatsinking.
Được đề xuất
USB Power Delivery (PD) Fast Chargers
In 65W-100W USB PD3.0/3.1 chargers, the BSZ017NE2LS5IATMA1 serves as the primary-side synchronous FET in active-clamp flyback or as the secondary-side synchronous rectifier. Its 25V VDS rating covers 20V EPR outputs with margin, and the 1.7 mΩ on-resistance minimizes secondary-side conduction loss — critical for meeting the 92-94% efficiency targets of CoC Tier-2 and DoE Level-VI charger standards. The small TSDSON-8 footprint also enables 30W/in³ power density.
Được đề xuất
Hot-Swap and OR-ing Controllers (12V/20V Rails)
The BSZ017NE2LS5IATMA1 is ideal for 12V and 20V hot-swap and OR-ing applications in server and telecom distribution. Its 27A continuous (TA) and 40A (TC) current ratings comfortably handle 240-400W load steps, while the 1.7 mΩ RDS(on) limits steady-state voltage drop to 34 mV at 20A — well below the 50 mV OR-ing tolerance of typical redundant supply designs. Combined with a hot-swap controller like BTS70081EPA, it provides inrush current limiting and reverse-current blocking.
Được đề xuất
Battery Protection (1S-3S Lithium-Ion Packs)
For 1S-3S lithium-ion battery packs (3.7V-12.6V nominal, 16.8V peak), the BSZ017NE2LS5IATMA1 functions as the low-side protection FET in standard PCM/BMS circuits. Its 1.7 mΩ RDS(on) at full charge/discharge currents of 20-30A contributes only 35-50 mV drop per FET, preserving usable battery capacity. The 25V VDS rating far exceeds the 12.6V pack voltage, providing ample margin for transient overvoltages, and the ±16V VGS tolerance survives common-mode ESD events at the pack terminals.
Được đề xuất
BLDC Motor Drive Half-Bridges (Robotics, E-Bikes)
In 24V-36V BLDC motor drive half-bridges for robotics, drones, and e-bikes, the BSZ017NE2LS5IATMA1 pairs with its 60V/100V siblings as the low-side switch in three-phase inverter stages. Its 40A TC rating supports 1-2 kW continuous motor power, while the 30 nC gate charge enables PWM frequencies up to 50 kHz for silent operation. When used at 24V rails with 50% duty cycle, peak FET dissipation stays below 2W — within the 2.1W TA rating with proper copper heatsinking.
Được đề xuất
Class-D Audio Amplifier Output Stages
In 50-200W Class-D audio amplifiers, the BSZ017NE2LS5IATMA1 serves as the low-side output FET in the H-bridge stage. The ultra-low 1.7 mΩ RDS(on) minimizes crossover distortion and thermal compression at high output currents, while the small TSDSON-8 footprint allows compact 4-layer amplifier layouts. Designers must ensure the 400 kHz PWM switching frequency is well above the audio band, and that gate-drive dead-time is optimized to prevent shoot-through despite the 30 nC gate charge.
Được đề xuất
E-Fuse and Inrush Current Limiters
The BSZ017NE2LS5IATMA1 functions as the main pass element in active e-fuse circuits for 12V/20V backplanes and solid-state circuit breakers. Its 1.7 mΩ RDS(on) provides only 17 mV drop at 10A — far less than traditional PTC fuses — and its 25V VDS rating covers standard bus voltages. Combined with a current-sense amplifier like INA180 and a comparator, designers can build resettable e-fuses with sub-100 µs response time, replacing bulky mechanical or polymeric fuses in industrial and server applications.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho BSZ017NE2LS5IATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | BSZ036NE2LSATMA1 | BSC018N04LSGATMA1 | BSC014N04LSATMA1 | IPB027N10N3GATMA1 | BSC097N06NSATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TSDSON-8-FL | PG-TSDSON-8-FL (same) | PG-TSDSON-8-FL (same) | PG-TSDSON-8-FL (same) | PG-TSDSON-8-FL (same) | PG-TSDSON-8-FL (same) |
| Drain-Source Voltage (VDS) | 25 V | 25 V | 40 V | 40 V | 100 V | 60 V |
| RDS(on) @ VGS=10V (typ) | 1.7 mΩ | 3.6 mΩ | 1.8 mΩ | 1.4 mΩ | 2.7 mΩ | 9.7 mΩ |
| Series / Family | OptiMOS 5 25V | OptiMOS 5 25V | OptiMOS 5 40V | OptiMOS 5 40V | OptiMOS 3 100V | OptiMOS 5 60V |
| Operating Junction Temperature | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C | -55°C to +175°C | -55°C to +150°C |
Bảo phân biệt quan trọng
- Lowest RDS(on) in Infineon 25V OptiMOS 5 family (vsBSZ036NE2LSATMA1)
- Compact TSDSON-8 footprint vs D2PAK alternatives (vsIRFB7534PBF (TO-220) / DPAK-class competitors)
- OptiMOS 5 generation figure-of-merit improvement (vsIPB027N10N3GATMA1 (OptiMOS 3, 100V class))
Ghi chú thiết kế
Estimated: at ID=20A continuous with RDS(on)=1.7 mΩ, conduction loss is I²R = 20² × 0.0017 = 0.68W. With TSDSON-8 θJA ≈ 50°C/W on a 1 oz 1-square-inch copper pour, junction temperature rise above ambient is approximately 34°C — well within the 150°C absolute maximum. For 40A pulsed operation (1 ms duty), peak power is 2.7W and the junction temperature must be calculated against the thermal impedance curve; do not exceed 5W instantaneous dissipation.
The PG-TSDSON-8-FL exposed pad must be soldered to a contiguous copper pour covering at least 50 mm² on top and bottom layers, stitched with thermal vias (0.3 mm pitch, 0.2 mm drill, plated and filled) for optimal heat extraction. Place the gate-drive resistor within 2 mm of pin 1 to suppress parasitic turn-on from drain-gate capacitance (Miller effect). Maintain a minimum 0.2 mm clearance between the drain copper and signal traces.
Do not exceed VGS=±16V absolute maximum — gate-oxide stress accelerates degradation. Always operate VGS between 8V and 12V for optimum RDS(on) without oxide risk. Avoid paralleling multiple BSZ017NE2LS5IATMA1 FETs without individual gate-source resistors (10-100Ω) to prevent high-frequency oscillation. The 2V gate threshold is NOT a logic-level guarantee — confirm full enhancement with VGS≥8V at the lowest expected operating temperature.
Thông tin tuân thủ
RoHS compliant per Infineon product page and JLCPCB listing. Standard grade - not AEC-Q100 qualified; for automotive applications, contact Infineon for Q1-grade variants.
