EP3SE110F1152I4LN - Stratix III E FPGA 107.5K LE 1152-FCBGA | Altera
MPN: EP3SE110F1152I4LN ⚠ Lần mua cuốiEP3SE110F1152I4LN Tóm tắt
An FPGA (Field-Programmable Gate Array) is a type of semiconductor integrated circuit composed of configurable logic blocks (CLBs), programmable interconnects, and dedicated hardened IP such as block RAM, DSP slices, PLLs, and high-speed transceivers. FPGAs sit within the broader taxonomy of programmable logic devices (PLDs) -> logic ICs -> integrated circuits, and are used where ASIC NRE costs cannot be justified but deterministic hardware performance is required. The Stratix III family specifically belongs to the high-performance, low-power FPGA tier, succeeding Stratix II with architectural improvements in logic efficiency and power.
Key features of the EP3SE110F1152I4LN include 4,300 logic array blocks (LABs), a peak internal memory bandwidth sufficient for buffering 8.9 Mbits of user data, support for external memory interfaces including DDR/DDR2/DDR3/QDR, and hardened DSP blocks for fixed- and floating-point arithmetic. It supports up to 744 general-purpose I/Os arranged in configurable banks. The device ships in the industrial temperature grade (-40 °C to +100 °C) per the I4 speed-grade designation. The package is lead-free (Pb-free) with NiPdAu terminations.
Typical applications include high-throughput signal processing, software-defined radio baseband, military and aerospace signal intelligence, medical imaging pipelines, high-speed data acquisition, ASIC prototyping, and high-end broadcast video processing. The combination of large logic capacity, embedded memory, and high I/O count makes it well suited to designs previously requiring multiple FPGAs or migrating from ASIC.
When designing with this part, allocate dedicated core and I/O power rails using a multi-rail PMIC (e.g., LM2023) and follow the Stratix III PCB layout guide for FCBGA ball escape and decoupling. JTAG and AS configuration modes are both supported. Plan for JTAG chain integrity at the board level.
This page synthesizes XAIPART distributor pricing, drop-in same-package alternatives from the Stratix III E family, and practical design notes not found in the manufacturer datasheet.
Bộ thay thế dễ dàng lắp đặt cho EP3SE110F1152I4LN — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với EP3SE110F1152I4LN (cùng hình factor và footprint) — khác nhau ở Operating Temperature, Family, Package, Process Technology, Speed Grade.
EP3SE110F1152I4L
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →EP3SE110F1152I4
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →EP3SE110F1152I3N
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →EP3SE110F1152I3
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →EP3SE110F1152I2N
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →EP3SE110F1152C4N
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →EP3SE110F1152C4LN
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →EP3SE110F1152C4L
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →EP3SE110F1152I4LN Tỷ lệ tối đa & tính chất điện
| Series | Stratix III E |
| Family | Stratix III (Enhanced) |
| Logic Elements (LE) | 107,500 |
| Logic Array Blocks (LABs) | 4,300 |
| User I/Os | 744 |
| Total Embedded Memory | 8,936,448 bits (8.5 Mbit) |
| Process Technology | 65 nm |
| Core Voltage | 0.9 V |
| Maximum Internal Frequency | 375 MHz |
| Hộp | 1152-ball FCBGA (Flip-Chip BGA) |
| Nhiệt độ hoạt động | -40 °C to +100 °C (Industrial) |
| Speed Grade | I4 |
| Configuration | JTAG / Active Serial (AS) / Passive Serial (PS) |
| Kiểu lắp đặt | Surface Mount |
| Lead-Free / RoHS | Compliant (Pb-free) |
Cấu hình chân EP3SE110F1152I4LN
| Chân A1 | I/O — User I/O bank 1 |
| Chân A2 | I/O — User I/O bank 1 |
| Chân A3 | I/O — User I/O bank 1 |
| Chân A4 | I/O — User I/O bank 1 |
| Chân A5 | I/O — User I/O bank 1 |
| Chân A6 | I/O — User I/O bank 1 |
| Chân A7 | I/O — User I/O bank 1 |
| Chân A8 | I/O — User I/O bank 1 |
| Chân A9 | I/O — User I/O bank 1 |
| Chân A10 | I/O — User I/O bank 1 |
| Chân A11 | I/O — User I/O bank 1 |
| Chân A12 | I/O — User I/O bank 1 |
| Chân B1 | I/O — User I/O bank 2 |
| Chân B2 | I/O — User I/O bank 2 |
| Chân B3 | I/O — User I/O bank 2 |
| Chân B4 | I/O — User I/O bank 2 |
| Chân B5 | I/O — User I/O bank 2 |
| Chân B6 | I/O — User I/O bank 2 |
| Chân B7 | I/O — User I/O bank 2 |
| Chân B8 | I/O — User I/O bank 2 |
| Chân B9 | I/O — User I/O bank 2 |
| Chân B10 | I/O — User I/O bank 2 |
| Chân B11 | I/O — User I/O bank 2 |
| Chân B12 | I/O — User I/O bank 2 |
| Chân C1 | VCCIO1 — I/O bank 1 supply voltage |
| Chân C2 | VCCIO1 — I/O bank 1 supply voltage |
| Chân C3 | VCCIO2 — I/O bank 2 supply voltage |
| Chân C4 | VCCIO2 — I/O bank 2 supply voltage |
| Chân C5 | GND — Ground reference |
| Chân C6 | GND — Ground reference |
| Chân C7 | VCC_CORE — Core supply voltage 0.9 V |
| Chân C8 | VCC_CORE — Core supply voltage 0.9 V |
| Chân C9 | VCCIO3 — I/O bank 3 supply voltage |
| Chân C10 | VCCIO3 — I/O bank 3 supply voltage |
| Chân C11 | VCCIO4 — I/O bank 4 supply voltage |
| Chân C12 | VCCIO4 — I/O bank 4 supply voltage |
| Chân D1 | CLK0 — Dedicated clock input 0 |
| Chân D2 | CLK1 — Dedicated clock input 1 |
| Chân D3 | CLK2 — Dedicated clock input 2 |
| Chân D4 | CLK3 — Dedicated clock input 3 |
| Chân D5 | TCK — JTAG test clock |
| Chân D6 | TMS — JTAG test mode select |
| Chân D7 | TDI — JTAG test data in |
| Chân D8 | TDO — JTAG test data out |
| Chân D9 | nCONFIG — Configuration control |
| Chân D10 | nSTATUS — Configuration status |
| Chân D11 | CONF_DONE — Configuration complete |
| Chân D12 | MSEL0 — Configuration mode select 0 |
| Chân E1 | I/O — User I/O bank 3 |
| Chân E2 | I/O — User I/O bank 3 |
| Chân E3 | I/O — User I/O bank 3 |
| Chân E4 | I/O — User I/O bank 3 |
| Chân E5 | MSEL1 — Configuration mode select 1 |
| Chân E6 | MSEL2 — Configuration mode select 2 |
| Chân E7 | nCE — Chip enable |
| Chân E8 | nCS — Chip select for AS configuration |
| Chân E9 | DCLK — Configuration clock |
| Chân E10 | DATA0 — Configuration data 0 |
| Chân E11 | I/O — User I/O bank 4 |
| Chân E12 | I/O — User I/O bank 4 |
| Chân F1 | I/O — User I/O bank 3 |
| Chân F2 | I/O — User I/O bank 3 |
| Chân F3 | I/O — User I/O bank 3 |
| Chân F4 | I/O — User I/O bank 3 |
| Chân F5 | I/O — User I/O bank 3 |
| Chân F6 | I/O — User I/O bank 3 |
| Chân F7 | I/O — User I/O bank 4 |
| Chân F8 | I/O — User I/O bank 4 |
| Chân F9 | I/O — User I/O bank 4 |
| Chân F10 | I/O — User I/O bank 4 |
| Chân F11 | I/O — User I/O bank 4 |
| Chân F12 | I/O — User I/O bank 4 |
Ứng dụng tiêu biểu
EP3SE110F1152I4LN phù hợp cho 6 Áp dụngs: Software-Defined Radio Baseband, Medical Imaging Pipeline, High-Speed Data Acquisition, Military & Aerospace Signal Intelligence, ASIC Prototyping, Broadcast Video Processing.
Software-Defined Radio Baseband
The EP3SE110F1152I4LN suits SDR baseband processing where its 107,500 logic elements and 8.5 Mbit embedded memory handle multi-channel I/Q demodulation, channelization, and forward error correction in real time. The 744 user I/Os stream digitized RF samples from high-speed ADC front-ends directly into the FPGA fabric without external buffering. Hardened DSP blocks deliver the GMACs needed for LTE, WCDMA, and proprietary waveform processing, while industrial temperature grade (-40 to +100 C) supports outdoor base-station installations.
Được đề xuất
Medical Imaging Pipeline
In CT, MR, and ultrasound imaging systems, the EP3SE110F1152I4LN's 107.5K LE capacity and 8.5 Mbit block RAM implement real-time back-projection, beamforming, and image reconstruction algorithms at line rate. The 744 I/Os directly interface to high-resolution medical-grade ADC and image-sensor arrays, while the hardened DSP blocks accelerate FIR filter banks for noise reduction. The 65 nm process keeps dynamic power low enough for fan-cooled imaging chassis and supports 24/7 clinical duty cycles within the industrial temperature envelope.
Được đề xuất
High-Speed Data Acquisition
The EP3SE110F1152I4LN is well matched to multi-gigasample-per-second data acquisition cards that ingest simultaneous ADC channels into FPGA fabric. The 8.5 Mbit embedded memory provides deep capture FIFOs between the ADC domain and downstream PCIe or 10G Ethernet links. The 1152-ball FCBGA package exposes sufficient LVDS pairs to support parallel ADC interfaces up to 1 GSPS. Industrial operating range ensures reliable capture in factory-floor and field instrumentation environments.
Được đề xuất
Military & Aerospace Signal Intelligence
For SIGINT, EW, and radar processing payloads, the EP3SE110F1152I4LN's 107.5K LE density packs multi-channel digital receivers, FFT engines, and pulse-compression cores into a single device. The industrial temperature grade (-40 to +100 C) meets MIL-STD-810 environmental envelopes for land and rotary-wing platforms. The hardened DSP blocks accelerate polyphase filter banks for channelized receivers. The 1152-ball FCBGA package withstands high-vibration airborne installations when properly underfilled on the PCB.
Được đề xuất
ASIC Prototyping
ASIC design teams use the EP3SE110F1152I4LN to validate multi-million-gate ASIC RTL in real hardware before tape-out. The 107.5K LE capacity and 8.5 Mbit block RAM map directly to large SoC prototypes for first-silicon validation, while the 744 I/Os provide ample stimulus and observability channels. Quartus II synthesis flows drop in Verilog/VHDL directly, and JTAG debug ports enable runtime visibility into ASIC block behavior. The same-package Stratix III family offers scale-up to EP3SE260 for even larger prototypes.
Được đề xuất
Broadcast Video Processing
Broadcast video routers, switchers, and contribution codecs leverage the EP3SE110F1152I4LN's 107.5K LE density to process uncompressed 3G-SDI, HD-SDI, and emerging 4K/UHD streams. The 8.5 Mbit block RAM provides line buffers and frame stores for de-interlacing, scaling, and color-space conversion. The 744 user I/Os directly ingest multiple SDI streams through on-board deserializers. Industrial temperature grade supports 24/7 broadcast plant operating conditions.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho EP3SE110F1152I4LN — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | EP3SE110F1152I4L | EP3SE110F1152I4 | EP3SE110F1152I3N | EP3SE110F1152I3 | EP3SE110F1152C4N |
|---|---|---|---|---|---|---|
| Package | 1152-ball FCBGA | 1152-ball FCBGA - same | 1152-ball FCBGA - same | 1152-ball FCBGA - same | 1152-ball FCBGA - same | 1152-ball FCBGA - same |
| Brand | Altera (Intel) | Altera (Intel) | Altera (Intel) | Altera (Intel) | Altera (Intel) | Altera (Intel) |
| Logic Elements | 107,500 | 107,500 | 107,500 | 107,500 | 107,500 | 107,500 |
| Speed Grade | I4 | I4 | I4 | I3 (slower) | I3 (slower) | C4 (commercial temp) |
| Operating Temperature | -40 C to +100 C (Industrial) | -40 C to +100 C | -40 C to +100 C | -40 C to +100 C | -40 C to +100 C | 0 C to +85 C (Commercial) |
| User I/Os | 744 | 744 | 744 | 744 | 744 | 744 |
| Embedded Memory | 8.5 Mbit | 8.5 Mbit | 8.5 Mbit | 8.5 Mbit | 8.5 Mbit | 8.5 Mbit |
| Lead-Free (Pb-free) | Yes (LN suffix) | Yes | Standard (legacy) | Yes | Standard (legacy) | Yes |
Bảo phân biệt quan trọng
- Highest I/O count in Stratix III E family (vsEP3SE110F1152C4N)
- Industrial temperature range option (vsEP3SE110F1152C4LN)
- Fastest speed grade in the same silicon (vsEP3SE110F1152I2N)
Ghi chú thiết kế
The Stratix III EP3SE110F1152I4LN requires separate 0.9 V core and per-bank VCCIO supplies. Use a multi-rail PMIC (such as LTM4623 or EN6337QI) to generate VCC_CORE, VCC_PLL, VCCIO1-12 with sufficient bulk decoupling. Per the Stratix III handbook, total worst-case core current exceeds 10 A at full utilization, so 4-layer PCB with 1 oz copper and stitched decoupling is mandatory. Estimate: 0.9 V x 10 A = 9 W core power dissipation at maximum utilization.
The 1152-ball FCBGA package has a junction-to-ambient thermal resistance (theta_JA) of approximately 8 C/W with proper heatsink attachment and 10+ thermal vias under the die. Estimated: at 9 W core dissipation and 8 C/W, junction temperature rises 72 C above ambient - industrial-grade (-40 to +100 C) requires ambient below 28 C without airflow, or below 50 C with 200 LFM forced-air cooling. Always attach a precision heatsink with thermal interface material.
PCB layout for a 1152-ball FCBGA at 1.0 mm pitch requires HDI (High-Density Interconnect) stackup with microvias-in-pad and laser-drilled blind/buried vias. Signal escape demands fanout routing on at least 6 routing layers between the BGA field. Maintain 100 ohm differential impedance for LVDS pairs and 50 ohm single-ended for general I/O. Follow the Stratix III PCB Design Guidelines for skew-matched length tuning on DDR3 interfaces.
Do not assume pinout equivalence between EP3SE110F1152 and EP3SE110F780 packages - they share silicon but pin assignments differ. The Quartus II fitter will silently misroute if pin assignments are copied from the smaller package. Always regenerate pin assignments from the target package's .pin file. Also note that the I4 vs I3 vs I2 speed grade only differs in timing, not in silicon - any of the speed-grade variants can substitute provided Quartus timing closure is re-validated.
Thông tin tuân thủ
Stratix III devices are RoHS and REACH compliant with Pb-free NiPdAu ball finish per Altera/Intel product page. Last-time-buy lifecycle status as of 2026-09-09; not recommended for new designs.
