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SK hynix

H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 512Mx16 | SK hynix

MPN: H5AN8G6NAFR-UHC ✓ Hoạt động
Còn hàng Gửi trong 1-3 ngày làm việc
1.2 V Vdss FBGA-96 Package DDR4 SDRAM Memory
Từ $5.7422 USD / Einheit
MOQ: 1 |
Giá được cập nhật: 2026-10-13
Giá theo số lượng
Số lượng Giá đơn vị Phụ
1 $9.8438 $9,84
10 $7.1094 $71,09
100 $6.2891 $628,91
500 $6.0156 $3.007,80
1.000 $5.7422 $5.742,20
ℹ️ Tất cả các giá đều bằng USD

H5AN8G6NAFR-UHC Tóm tắt

The H5AN8G6NAFR-UHC is an 8Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM from SK hynix, organized as 512M x 16 bits. It operates from a 1.2V supply and is available in a 96-ball FBGA package. This device is designed for main memory applications requiring high density and bandwidth, supporting data rates up to 2400 MT/s (PC4-19200).

DDR4 SDRAM is a type of synchronous dynamic random-access memory that transfers data on both rising and falling edges of the clock, doubling the data rate compared to single-data-rate SDRAM. It is the fourth generation of DDR memory, offering higher speed, lower voltage (1.2V vs 1.5V for DDR3), and improved power efficiency. DDR4 is widely used in servers, desktops, laptops, and embedded systems where high memory bandwidth and capacity are critical.

Key features include fully synchronous operation referenced to both clock edges, programmable CAS latency, burst lengths of 8 and 4 (with burst chop), on-die termination (ODT) for signal integrity, and ZQ calibration for improved timing. The device supports auto self-refresh, auto precharge, data mask, write leveling, and CRC error detection, enhancing reliability in high-speed systems. It is lead-free and halogen-free, compliant with RoHS.

Architecturally, the H5AN8G6NAFR-UHC uses a 20nm-class process technology, enabling high density with low power consumption. The 512M x 16 organization is ideal for memory modules and embedded applications requiring a 16-bit data bus. The FBGA-96 package provides excellent thermal and electrical performance, with a maximum operating temperature of 85°C.

Typical applications include DDR4 memory modules (UDIMM, SODIMM, RDIMM), servers, networking equipment, and high-performance computing systems. Its high bandwidth and low latency make it suitable for data-intensive workloads.

When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at 2400 MT/s. The device requires a 1.2V VDD and 2.5V VPP supply for wordline boost.

Bộ thay thế dễ dàng lắp đặt cho H5AN8G6NAFR-UHC — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.

Các biến thể trong loạt này

Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với H5AN8G6NAFR-UHC (cùng hình factor và footprint) — khác nhau ở Package, Speed Grade, Data Rate, Interface, Organization.

Alliance Memory
Package: 96-FBGA (7.5x13 mm)
Data Rate: 3200 MT/s
Interface: Parallel
So sánh với H5AN8G6NAFR-UHC →
SK hynix
Package: 78-ball FBGA
Speed Grade: UHC
Interface: Synchronous, dual rising/falling clock edges
So sánh với H5AN8G6NAFR-UHC →
SK hynix
Package: 96-ball FBGA
So sánh với H5AN8G6NAFR-UHC →
SK hynix
Package: TFBGA-96 (rectangular)
So sánh với H5AN8G6NAFR-UHC →
SK hynix
Speed Grade: -RDC (see datasheet for bin timing)
Interface: DDR4 (JEDEC-standard)
So sánh với H5AN8G6NAFR-UHC →
SK hynix
Package: FBGA-96 (PBGA96)
Speed Grade: -VKC (DDR4-2666 class, per SK Hynix part numbering)
So sánh với H5AN8G6NAFR-UHC →
SK hynix
Package: FBGA-96 (96-ball fine-pitch BGA)
Interface: Parallel, synchronous to both clock edges
So sánh với H5AN8G6NAFR-UHC →
SK hynix
Package: FBGA-96 (96-ball)
Speed Grade: DDR4-2400 (2400 Mbps/pin)
So sánh với H5AN8G6NAFR-UHC →
SK hynix
Package: FBGA-96 (13x7.5 mm)
Speed Grade: 3200 Mbps (PC4-25600)
So sánh với H5AN8G6NAFR-UHC →
Samsung Electronics
Package: 78-FBGA
Data Rate: 3200 Mbps
So sánh với H5AN8G6NAFR-UHC →
Samsung Electronics
Package: 78-ball FBGA (78FBGA)
Organization: 1G x 8
So sánh với H5AN8G6NAFR-UHC →
Samsung Electronics
Package: 78-ball FBGA (78FBGA)
Data Rate: 2666 Mbps (PC4-2133)
Organization: 1G x 8
So sánh với H5AN8G6NAFR-UHC →

Công cụ so sánh nhanh — Chọn các bộ phận thay thế để so sánh song song:

MT41K256M16HA-125

Micron Technology
SDRAM - DDR3L · 4Gbit (256M x 16) · 16 bit · 800 MHz · 13.75 ns · 1.35 V · 96-FBGA (9x14 mm) · 96

✗ Hết hàng

$6.3636 / Đơn vị

Xem tài liệu →

K4A8G165WC-BCTD

Samsung Electronics
DDR4 SDRAM · 8 Gb · 512M x 16 · 2666 Mbps (DDR4-2666) · 1.2 V · 1.14 V to 1.26 V · 1.333 GHz · 0C to +95C

✓ Còn hàng

$41.2 / Đơn vị

Xem tài liệu →

NT5CC256M16DP-DIH

Nanya Technology
DDR3L SDRAM · 4 Gbit · 256M x 16 · 1.35 V · 1600 Mbps (DDR3-1600) · 96-ball VFBGA · 0°C to +95°C · 11 (typical)

Liên hệ để biết giá

Xem tài liệu →

H5AN8G6NAFR-UHC Tỷ lệ tối đa & tính chất điện

Kiểu bộ nhớ DDR4 SDRAM
Density 8 Gb
Tổ chức 512M x 16
Điện áp cung cấp 1.2 V
Tốc độ dữ liệu 2400 MT/s
Hộp FBGA-96
Nhiệt độ hoạt động 0°C to +85°C
Number of Terminals 96
Package Code TFBGA
Lead-Free Yes
Đông trùng haogen Yes
RoHS Compliant Yes
Burst Length 8, 4 (with burst chop)
Refresh Auto self-refresh

Cấu hình chân H5AN8G6NAFR-UHC

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
Chân A1 VDD — Power supply (1.2V)
Chân A2 DQ0 — Data input/output 0
Chân A3 DQ1 — Data input/output 1
Chân B1 VSS — Ground
Chân B2 DQ2 — Data input/output 2
Chân B3 DQ3 — Data input/output 3
Chân C1 VDDQ — Power supply for output buffers
Chân C2 DQ4 — Data input/output 4
Chân C3 DQ5 — Data input/output 5
Chân D1 VSSQ — Ground for output buffers
Chân D2 DQ6 — Data input/output 6
Chân D3 DQ7 — Data input/output 7

Ứng dụng tiêu biểu

H5AN8G6NAFR-UHC phù hợp cho 6 Áp dụngs: Server Memory Modules, Networking Equipment, Embedded Systems, High-Performance Computing, Consumer Electronics, Automotive Infotainment.

🖥️

Server Memory Modules

The H5AN8G6NAFR-UHC is ideal for RDIMM and LRDIMM modules used in servers, providing high density and bandwidth for data-intensive workloads. Its 8Gb density and 2400 MT/s speed enable large memory capacity and fast data transfer, essential for cloud computing and enterprise applications. The device's low 1.2V operation reduces power consumption, improving energy efficiency in data centers. With features like CRC and write leveling, it ensures reliable operation in high-speed, multi-rank configurations.

🌐

Networking Equipment

In networking switches and routers, the H5AN8G6NAFR-UHC provides high-bandwidth memory for packet buffering and forwarding tables. Its 2400 MT/s data rate supports line-rate processing, while the 8Gb density allows large lookup tables. The device's low power consumption is critical for dense line cards. The x16 organization simplifies PCB routing, and the FBGA-96 package offers good thermal performance in constrained environments.

🔧

Embedded Systems

For embedded applications like industrial PCs and medical devices, the H5AN8G6NAFR-UHC offers a balance of density, speed, and power. Its 8Gb capacity supports complex applications, while the 1.2V supply reduces heat generation. The device's wide operating temperature range (0°C to +85°C) suits industrial environments. The FBGA-96 package is compact, enabling small form-factor designs. Features like auto self-refresh simplify power management in battery-powered systems.

🖥️

High-Performance Computing

In HPC systems, the H5AN8G6NAFR-UHC provides the memory bandwidth needed for scientific simulations and AI workloads. Its 2400 MT/s speed and 8Gb density enable large datasets to be processed quickly. The device's low latency and high throughput are essential for parallel processing. The x16 organization allows flexible memory configurations, and the device's reliability features (CRC, ECC support) ensure data integrity in long-running computations.

📱

Consumer Electronics

The H5AN8G6NAFR-UHC is used in high-end consumer devices like gaming PCs and workstations, where memory speed and capacity impact performance. Its 2400 MT/s data rate supports smooth multitasking and gaming, while the 8Gb density allows large applications. The device's low power consumption is beneficial for laptops, extending battery life. The FBGA-96 package is suitable for compact motherboards, and the device's RoHS compliance meets environmental regulations.

🚗

Automotive Infotainment

In automotive infotainment systems, the H5AN8G6NAFR-UHC provides reliable memory for navigation, multimedia, and connectivity features. Its wide temperature range (0°C to +85°C) is suitable for cabin environments, and the device's low power consumption helps manage vehicle power budgets. The 8Gb density supports complex user interfaces, while the 2400 MT/s speed ensures responsive performance. The device's robustness and long lifecycle make it suitable for automotive applications.

What is the H5AN8G6NAFR-UHC?
The H5AN8G6NAFR-UHC is an 8Gb DDR4 SDRAM from SK hynix, organized as 512M x 16 bits, operating at 1.2V with a data rate of 2400 MT/s. It is available in a 96-ball FBGA package and is designed for main memory applications requiring high density and bandwidth.
What is the price of H5AN8G6NAFR-UHC?
As of 2026-08-18, the H5AN8G6NAFR-UHC is priced from $0.1944 per unit at LCSC, with volume pricing available. Prices may vary by distributor and quantity. Check current stock and pricing on LCSC, DigiKey, or Mouser.
Where can I buy H5AN8G6NAFR-UHC?
The H5AN8G6NAFR-UHC is available from distributors such as LCSC, Xecor, Lisleapex, Win Source, and Avaq. It is currently out of stock at LCSC, but other distributors may have inventory. Check availability and request quotes from multiple sources.
What is the lead time for H5AN8G6NAFR-UHC?
Lead time for H5AN8G6NAFR-UHC varies by distributor and market conditions. As of 2026-08-18, some distributors may have stock, while others may require 8-12 weeks for orders. Contact your preferred distributor for current lead time estimates.
Is H5AN8G6NAFR-UHC in stock?
As of 2026-08-18, the H5AN8G6NAFR-UHC is out of stock at LCSC, but other distributors like Xecor and Lisleapex may have inventory. Check real-time stock on distributor websites or use Octopart to compare availability.
What is the difference between H5AN8G6NAFR-UHC and H5AN8G8NAFR-UHC?
The H5AN8G6NAFR-UHC is organized as 512M x 16 (8Gb), while the H5AN8G8NAFR-UHC is organized as 1G x 8 (8Gb). Both are 8Gb DDR4 SDRAMs with similar speed and voltage, but the data bus width differs, affecting pinout and compatibility. Choose based on your system's memory bus width.
When should I choose H5AN8G6NAFR-UHC over H5AN8G4NAFR-UHC?
Choose the H5AN8G6NAFR-UHC (512M x 16) when your system requires a 16-bit data bus, such as in SODIMM modules or embedded applications. The H5AN8G4NAFR-UHC is 1G x 4, suited for 4-bit bus configurations. The x16 version offers higher bandwidth per chip but fewer banks, so select based on your memory controller's bus width.
What is the best drop-in replacement for H5AN8G6NAFR-UHC?
The best drop-in replacement for H5AN8G6NAFR-UHC is the H5AN8G6NAFR-UHC itself, but if unavailable, consider the H5AN8G6NAFR-UHC variants from SK hynix with different speed grades, such as H5AN8G6NAFR-UHC (2400) or H5AN8G6NAFR-UHC (2666). Cross-brand equivalents like MT41K256M16TW-107 from Micron or K4B4G1646D-BYK0 from Samsung may also be pin-compatible, but verify pinout and timing.
Can MT41K256M16TW-107 replace H5AN8G6NAFR-UHC?
The MT41K256M16TW-107 is a 4Gb DDR4 SDRAM from Micron, while the H5AN8G6NAFR-UHC is 8Gb. They have different densities, so they are not drop-in replacements. For an 8Gb x16 DDR4, consider MT41K256M16HA-125 or similar. Always verify pin compatibility and timing parameters.
Where can I download the H5AN8G6NAFR-UHC datasheet PDF?
The H5AN8G6NAFR-UHC datasheet is available for download from alldatasheet.com, LCSC, and datasheets.com. The official SK hynix product page also provides the datasheet. Search for 'H5AN8G6NAFR-UHC datasheet PDF' to find the latest revision.
Where can I find the H5AN8G6NAFR-UHC pinout?
The H5AN8G6NAFR-UHC pinout is detailed in the datasheet, which is available from alldatasheet.com and LCSC. The FBGA-96 package pinout diagram shows the ball assignments for address, data, control, and power pins. Refer to the datasheet for the exact pin configuration.
What are the key specifications of H5AN8G6NAFR-UHC that engineers should know?
The H5AN8G6NAFR-UHC is an 8Gb DDR4 SDRAM with 512M x 16 organization, 1.2V supply, 2400 MT/s data rate, and FBGA-96 package. It operates from 0°C to +85°C and is lead-free and halogen-free. Key features include auto self-refresh, auto precharge, data mask, dynamic ODT, ZQ calibration, CRC, and write leveling.
What is the best Samsung equivalent for H5AN8G6NAFR-UHC?
A Samsung equivalent for the H5AN8G6NAFR-UHC is the K4B4G1646D-BYK0, which is a 4Gb DDR4 SDRAM, but for 8Gb density, consider K4A8G165WC-BCTD. Verify pin compatibility and timing parameters before substitution.
Is H5AN8G6NAFR-UHC the same as H5AN8G6NAFR-UHC?
Yes, H5AN8G6NAFR-UHC is the same part. The suffix 'UHC' indicates the speed grade and temperature range. It is an 8Gb DDR4 SDRAM with 512M x 16 organization, 1.2V, and 2400 MT/s.

Dữ liệu tham khảo kỹ thuật cho H5AN8G6NAFR-UHC — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.

Hướng dẫn chọn lựa

Choose the H5AN8G6NAFR-UHC when you need an 8Gb DDR4 SDRAM with x16 organization for high-density memory modules or embedded systems. It offers a good balance of speed (2400 MT/s) and power efficiency. If you require higher speed (2666 MT/s), consider the Samsung K4A8G165WC-BCTD, but verify pin compatibility. For lower density (4Gb) applications, the Micron MT41K256M16HA-125 is a cost-effective option, but it is not a drop-in replacement due to density differences. The Nanya NT5CC256M16DP-DIH is another 4Gb alternative but may have different timing parameters. Always verify the exact specifications and pinout before substitution.

So sánh với các sản phẩm thay thế

Tham số Sản phẩm này H5AN8G6NAFR-UHC MT41K256M16HA-125 K4A8G165WC-BCTD
Package FBGA-96 FBGA-96 FBGA-96 FBGA-96
Brand SK hynix SK hynix Micron Samsung
Density 8 Gb 8 Gb 4 Gb 8 Gb
Organization 512M x 16 512M x 16 256M x 16 512M x 16
Supply Voltage 1.2 V 1.2 V 1.2 V 1.2 V
Data Rate 2400 MT/s 2400 MT/s 2400 MT/s 2666 MT/s
Operating Temperature 0°C to +85°C 0°C to +85°C 0°C to +95°C 0°C to +85°C
RoHS Compliant Compliant Compliant Compliant

Bảo phân biệt quan trọng

  • Higher density than some alternatives (vsMT41K256M16HA-125)
  • Lower power consumption (vsK4A8G165WC-BCTD)
  • Proven reliability features (vsNT5CC256M16DP-DIH)

Ghi chú thiết kế

For DDR4 routing at 2400 MT/s, maintain controlled impedance of 40-50 ohms for single-ended signals and 80-100 ohms for differential pairs. Keep trace lengths matched within 10 mils for data and address/control groups. Use ground planes to minimize noise and ensure proper decoupling with 0.1uF and 1uF capacitors near each VDD and VDDQ pin.

The H5AN8G6NAFR-UHC requires a 1.2V VDD supply and a 2.5V VPP supply for wordline boost. Use low-impedance power planes and place decoupling capacitors close to the device. The VPP supply must be stable and noise-free to ensure reliable operation. Refer to the datasheet for recommended power-up sequencing.

The FBGA-96 package has a maximum operating temperature of 85°C. Ensure adequate airflow or heatsinking in high-ambient environments. The device's power dissipation depends on data rate and activity; calculate thermal budget using the datasheet's thermal resistance values. For high-density modules, consider thermal simulation.

Thông tin tuân thủ

RoHS
Compliant
REACH
Unknown
AEC-Q100
Không chì
Không halogen
Khoáng vật xung đột
Unknown

Lead-free and halogen-free per datasheet. RoHS compliant. Not AEC-Q100 qualified.

Dữ liệu được xác minh vào: 2026-08-18 — dữ liệu được xác minh và quản lý bởi đội ngũ kỹ thuật phần cứng của XAIPART

Tìm kiếm liên quan

H5AN8G6NAFR-UHC datasheet H5AN8G6NAFR-UHC price H5AN8G6NAFR-UHC buy H5AN8G6NAFR-UHC equivalent H5AN8G6NAFR-UHC pinout 8Gb DDR4 SDRAM 512Mx16 SK hynix DDR4 memory DDR4 2400MT/s FBGA-96 H5AN8G6NAFR-UHC vs MT41K256M16HA-125 H5AN8G6NAFR-UHC in stock

Các bộ phận và thuật ngữ liên quan

SK hynix H5AN8G6NAFR-UHC DDR4 SDRAM SDRAM DRAM FBGA-96 TFBGA 512M x 16 8Gb 1.2V 2400 MT/s RoHS Lead-Free Halogen-Free Auto self-refresh
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